Microsystem Integration (March 20, 2017)

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Lisa Alexander
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1 Microsystem Integration (March 20, 2017) Mid-term exam: open notes/computers/ - 1:00 to 1:50 p.m., Wednesday, March 22. Homeworks #1 to 7. - Solutions of #1 to 7 are posted. Workshops #1 to Workshops with examples of good answers are posted. 1

2 IC Packaging Efficiency of Various Single Chip Packages 2

3 Major Design Considerations Design Electrical Design Thermal Design Mechanical Design Substrate Fabrication Assembly Testing Advanced Technologies 3

4 Three-Axis Accelerometer for iphone 4 4

5 Homework #6 5

6 Future 1-mm Thin and Flexible Smartphones? Glass or Polymer Cover; 0.05 mm 55-75µm thick chips OLED; 0.05 mm Chips (0.075mm) PCB TGP- Thermal Ground Plane (0.20 mm) Li Anode (0.075mm) Solid State Electrolyte (0.075mm) New Cathode (0.4 mm) K=300 W/mK K=5,000 W/mK Aluminum (0.05 mm) Polymer Case; mm 6

Layers 2600um 1 Layer 850um 1400 mah x 3.7 V = 5180 mwh capacity 5cm x 4.

7 Battery Electrode thickness C/LCO Si/S 100um 250um 500um 1000um 17 Layers 3900um 7 Layers 1400um 7 Layers 3000um 3 Layers 1000um 4 Layers 2800um 2 Layers 950um 2 Layers 2600um 1 Layer 850um 1400 mah x 3.7 V = 5180 mwh capacity 5cm x 4.4cm battery footprint Solid electrolyte mixed with electrode particles Electrode particles connected 7

8 An Example of Typical Thermal Resistances For a TGP with a thermal conductivity of ~1,500 W/mK; it is different from the one presented in the last slide. 8

Al 3CH3 Al CH 3 3 OH OH OH B: Al-CH 3* + H 2 O Al-OH * + CH 4 H 2 O CH 4 B) CH Al CH 3 3 CH CH

9 ALD Atomic Layer Deposition A: Al-OH* + Al(CH 3 ) 3 Al-O-Al-(CH 3 ) 2* + CH 4 ALD Alumina on MEMS Trimethyl Aluminum (TMA) CH 3 Al CH 3CH3 CH 4 A) OH OH OH Al(CH 3 ) 3 CH Al CH 3 3 CH CH Al 3CH3 Al CH 3 3 OH OH OH B: Al-CH 3* + H 2 O Al-OH * + CH 4 H 2 O CH 4 B) CH Al CH 3 3 CH CH Al 3CH3 Al CH 3 3 OH OH OH Water H 2 O H 2 O OH Al CH CH OH OH 3 3 CH CH Al 3CH3 Al CH 3 3 OH OH OH 9

10 ALD-Protected Li-ion Batteries (Steve George and Se-Hee Lee at CU) 200 Specific Capacity / ma h g Al 2 O 3 -LCO 7-10µm 10Al-LCO 6Al-LCO 2Al-LCO b-lco SEI: solid electrolyte interphase Homework#6 Cycle Number 10

10 ALD-Based Barrier Coating (Steve George at CU;

WVTR (g/m2/day) HTO test Permeation Rate 0.1 0.

/day at 38 C/85% RH Carcia et al., JAP, 2009 0.

11 10 ALD-Based Barrier Coating (Steve George at CU; Moisture and Oxygen Permeation) 1 Polymer Film WVTR (g/m2/day) HTO test Permeation Rate Homework#6 ALD-on-Polymer Film 5X10 5 g/m 2 /day at 38 C/85% RH Carcia et al., JAP, Alumina ALD Thickness (nm) 11 11

12 Polymer Molecular Layer Deposition (MLD) (Steve M. George, CU-Boulder) 1,6-Hexanediamine for Nylon 66 H H N CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 N H H (A) Adipoyl Chloride for Nylon 66 Cl C O CH 2 CH 2 CH 2 CH 2 (B) O C Cl 12

13 Major Design Considerations Design Electrical Design Thermal Design Mechanical Design Substrate Fabrication Assembly Testing 13

14 FEM Model Global model The profile is used in global mode Transfer boundary conditions from global model to local model by using submodeling technique The profile is used in local model W, calculate fatigue life Profile model Local model 14

15 FEM of Assembly Barrel Consistent with strength model mesh size! Center line Aspherical lens Grin lens Glass window Laser can 15

16 Failure criterion and small scale Failure process zone yielding Region dominated by farfield geometry and loading K-annulus, in this region stress can be expressed by K r The stress intensity factor, K, uniquely controls the stress/strain fields in the K-annulus. Assumed, stress/strain in the K-annulus affects failure process zone. Therefore, K can be used as a failure criterion to predict initiation. Assumption was proven in static loading for cracking prediction. (Reedy, Dunn, Su, etc ) 16

Curve fitting to calculate stress intensity K 1 10000 1000 1 1 2 ( 0, ) 1 1 2 r K r K2r f (0) 0(0) at Elastic Asymptotic fitting 0 (MPa) 100 10 1 Pad diameter: 30 mil Temperature

17 Curve fitting to calculate stress intensity K ( 0, ) r K r K2r f (0) 0(0) at Elastic Asymptotic fitting 0 (MPa) Pad diameter: 30 mil Temperature difference from 25 o C to -60 o C Stress : along the solder/gaas interface Stress intensity K 1 =106.1 MPa m E-05 1E Distance from the corner ( m) 17

Accurate Prediction to Avoid Device Cracking Joint Pad Diameter (mil) 50 45 Crack Region 40 35

18 Accurate Prediction to Avoid Device Cracking Joint Pad Diameter (mil) Crack Region None Crack Region Temperature Difference ( o C) 18

wedge Good notch sharpness Steel beam Bad notch sharpness Notch

19 Specimen for Experiments Cyclic loading, controlled deflection Hsub Ha Epoxy wedge clamp Substrate Steel beam La Lsub Epoxy wedge Good notch sharpness Steel beam Bad notch sharpness Notch sharpness was carefully examined through microscope before testing 19

20 Reliability Challenges Solder fatigue Delamination Cracking. Two major considerations: 1) Mechanics 2) Materials 20

21 Microsystem Integration (March 20, 2017) Mid-term exam: open notes/computers/ - 1:00 to 1:50 p.m., Wednesday, March 22. Homeworks #1 to 7. - Solutions of #1 to 7 are posted. Workshops #1 to Workshops with examples of good answers are posted. 21

Future Thin and Flexible Systems?

Future Thin and Flexible Systems? Packaging and Thermal Management Challenges for Future 1-mm Thin Smartphones? Y. C. Lee, University of Colorado - Boulder Three CU technologies: Flexible thermal ground planes All solid state battery Atomic