Capital / MRKT CAP \6.14B / \280.6B (as of May 12 th ) Chugeri, Yangji myun, Cheoin gu, Yongin, Kyunggi do, Korea
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2 Company name Established 05 JAN, 2000 Eugene Technology Co., Ltd. CEO Pyung Yong Um Capital / MRKT CAP \6.14B / \280.6B (as of May 12 th ) Address Main Products Home Page Chugeri, Yangji myun, Cheoin gu, Yongin, Kyunggi do, Korea Thermal LP-CVD & Plasma Process Eugene Tech is R&D oriented company, which is specialized in Single-Wafer Process Solution for Diffusion i area including Thermal LPCVD and Plasma Treatment processes. Up coming 450mm Convergence, foreseeable increased needs on Single-Wafer Process! JDA World 1 st 450mm Equipment ISMI/CNSE, Albany, NY JDA with Hynix 200/300mm Single wafer type ; LPCVD Nitride/Oxide/Poly Process 300mm Single wafer type ; Plasma Nitridation/Oxidation Process JDA with SAMSUNG 200/300mm Single wafer type ; LPCVD Nitride/Poly Process 300mm Single wafer type ; Plasma Nitridation/Oxidation Process Engineering Manpower over 80% R&D Key Member Name Position Major Career PY UM CEO Hynix, Teradyne, Brooks Auto. Dr. YW KIM CTO PhD Plasma Eng., VP R&D in Hynix SW SHIN Exec Dir 20 Yrs in Hynix R&D DJ KIM Exec Dir 19 Yrs in Samsung & Hynix Dr. JK KIM Exec Dir 20 Yrs in Hynix SH WOO Exec Dir 14 Yrs in Hynix R&D DK LEE Director 15 Yrs in Samsung R&D YD KIM Manager 15 Yrs in Samsung & Hynix R&D HW KIM Manager 10 Yrs in Hynix R&D Dr. Sergey Z Manager PhD Moscow Power Eng. Institute, LG Electric Eugene Technology 2
3 Thermal LPCVD Blue Jay TM Plasma Treatment System Albatross Very Low Thermal budget Excellent Uniformity Less particle generated Diverse Process Applications Very Thin Layer Deposition Nitride /Oxide /Poly Eugene Tech-patented Plasma Source Dual Rotated Spiral Antenna ICP Antenna Quartz Cylinder Low Electron Temperature ~ 1.0 ev Plasma Damage Free High Density 4E+12 Wide Process Windows 2 Zone 1 T.C Heater (100 ~800 ) Metal Contamination Free Nitridation /Oxidation Eugene Technology 3
4 Dual Rotated Spiral Antenna(DuRoSA) ICP(Inductively Coupled Plasma)Source Properties. High Plasma Density : > 4.0E12 atoms/cm 3. Plasma Damage Free : ~ 1 ev. Heater : 100 ~800. N-Concentration range 3.3 ~30 atomic% Arial 1 ST Antenna Coil (PCW Cooling) Gas Inlet Port 2 ND Antenna Coil (PCW Cooling) Quartz Tube Antenna Support. Patent No. : , , Eugene Technology 4
5 Cyclic CVD Various Spacer Deposition ii available with ih - Excellent Thickness Uniformity - Good Loading Effect - Excellent Step Coverage Very Low Temperature Deposition -50 ~ Suppress Thermal Degradation Excellent Wet Etch Rate - Thermal Ox < Cyclic CVD < HTO (0.5Å/Sec)* (1.0Å/Sec)* (1.9Å/Sec)* *300:1 BOE Application for Sacrifice Layer - Wet Etch Rate Controllability by Densification process technique - Patented t process and system High Throughput - up to 180WPH Silicon Nitride Silicon Oxide Easy Maintenance Eugene Technology 5
6 ~ ~ Application Expansion (LPCVD & Plasma) Expanding to Expanding to Expanding to Expanding to Expanding to 6 layers 12 layers 23 layers 45 layers 75 layers 100+ layers 5Xnm 4Xnm 3Xnm 2Xnm Cyclic CVD SiN, SiO 2 Cyclic CVD Seeding Poly Logic, Flash, DRAM 100+ layers Oxide LOGIC Oxidation DRAM Poly DRAM Oxidation FLASH Poly LOGIC Oxide FLASH 45 layers 75 layers Nitridation FLASH 23 layers Nitridation DRAM Poly FLASH 12 layers Nitride LOGIC Nitride DRAM Eugene Technology 6
7 Logic EUROPE Eugene Technology., Ltd., Korea Eugene Technology., Inc., USA Logic Logic DRAM Logic 450mm NAND CHINA NAND DRAM Eugene Technology., Inc., c, Taiwan a Logic DRAM NOR With our Single-Wafer Process technology & knowhow, we can deliver optimal customized process solutions to various clients. As the device geometry scaling down, demand on less thermal exposure & precise Single-Wafer process will prevail. And, Eugene Technology is certainly one of the solution providers. Eugene Technology 7
8 450mm Single Wafer LPCVD Process System World 1 st 450mm at ISMI/CNSE,Albany,NY NY Capability One Process Chamber with Dual process capability Poly and SiN Very Low Thermal budget Excellent Uniformity Less particle generated Diverse Process Applications Very Thin Layer Deposition Eugene Technology 8
9 Pumping cross section view Process Module Pumping cross section view Eugene Technology 9
10 Process Chamber closed Process Chamber open Eugene Technology 10
11 System Overview Category Activation Source Description Thermal (Resistance heating type) Flow Dynamics Shower Head Pressure Control Baratron Gauge & Throttle Valve MFC Control Digital type System Interface Device Net In-situ Chamber Clean Remote Plasma Cleaning (NF3) Material Ceramic AlN Heater Temperature Control 2 zone 2 T.C. Lifetime Target 1 yr (TBD) Process Chamber Max Multi 4 Chamber / Cluster tool Sub Module Dry Pump Each PM & 1 TM Pump Scrubber Burn type Eugene Technology 11
12 Various Process Applications & Solutions Process Silicon Nitride Silicon Oxide Undoped Silicon Precursor SiH4 Si2H6 NH3 N2O Source (doping) Gas PH3 0.1%N2 B2H6 0.1% H2 300mm Status Field Proven & Mass Product Under develop for Low Temperature (~550 ) Field Proven & Mass Product Under Develop for Low Temperature (~550 ) Field Proven & Mass Product Field Proven & Mass Product n-type Field Proven & Mass Product Silicon Field Proven & Mass Product p-type Silicon Field Proven (p-type doping at 500 ) Field Proven (p-type doping at 500 ) Eugene Technology 12
13 Category April May June July Month Aug Sep Oct Nov Dec Kickoff & Pre-Design Design Kickoff & Pre-design Design Review Manufacturing S2/S8 Site Preparation Source Inspection Approval for technical Issues Shipping to Dock Shipping Tool Dock Tool Installation/ Qualification Tool Installation Qual for SL1 Qual for SL2 & Tool Released Eugene Technology 13
14 DRAM Design 8F 2 Conv 6F 2 BG 6F 2 BG 4F 2 Pillar 4F 2 Pillar LPCVD Design Process & System Evaluation Production Plasma System Cyclic CVD POLY, SiN, SiO 2 Process & Design System Production Evaluation Plasma Nitridation, Plasma Oxidation, Plasma Doping Process & Design System Production Evaluation SiO 2, SiN, POLY 2 nd Half of 2010: 1 st draft design, Specification review, & Terms & Conditions Discussion. 1 st Half of 2011: Terms & Conditions agreed and Contract completed. Manufacturing begins including system integration with other modules & components. Continuous discussion with SEMATECH/ISMI 2 nd Half of 2011: 1 st 450mm LPCVD system Fab in at CNSE, Albany, New York 2012 & beyond: Successful process development with SEMATECH/ISMI. 450mm LPCVD Oxide, Plasma Nitridation & Oxidation, and Cyclic CVD will be available. And, Eugene Tech would like to offer all available process solutions to SEMATECH/ISMI for further collaboration together. Eugene Technology 14
15 Processes: Robust Diffusion process with good uniformity and film quality Productivity: Meet current 300mm s performance by 2013 Achieving successful outcome through Strong Collaboration between three parties; SEMATECH/ISMI, IDMs, and Eugene Technology SEMATECH /ISMI Eugene Tech IDMs Eugene Technology 15
16 Thank you! Q&A Eugene Technology 16
Company Overview JDA. JDA with Hynix. JDA with SAMSUNG. Engineering Manpower over 80% R&D Key Member Name Position Major Career
Company Overview Company name Eugene Technology Co., Ltd. Established 05 JAN, 2000 CEO Pyung Yong Um Capital / MRKT CAP \6.14B / \280.6B (as of May 12 th ) Address Main Products Home Page 209-3 Chugeri,
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