Near- and mid- infrared group IV photonics
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1 Near- and mid- infrared group IV photonics C. G. Littlejohns 1,2, M. Saïd Rouifed 1, H. Qiu 1, T. Guo Xin 1, T. Hu 1, T. Dominguez Bucio 2, M. Nedeljkovic 2, G. Z. Mashanovich 2, G. T. Reed 2, F. Y. Gardes 2, H. Wang 1 1 Novitas, Nanoelectronics Centre of Excellence, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Optoelectronics Research Centre, Building 53, University of Southampton, Southampton, SO17 1BJ, UK. Energy Material and Nanotechnology Meeting on Quantum, Phuket, April 2016.
2 Outline 1. Introduction to silicon photonics. 2. Silicon-Germanium-on-Insulator (SGOI) formed by rapid melt growth (RMG). 3. Prospects for mid-infrared silicon photonics. 2
3 Outline 1. Introduction to silicon photonics. 2. Silicon-Germanium-on-Insulator (SGOI) formed by rapid melt growth (RMG). 3. Prospects for mid-infrared silicon photonics. 3
4 Silicon Photonics: Internet Traffic Predictions Expanding bandwidth requirements: 1 Zetabyte of internet traffic per year this year Doubled by zetabyte = gigabytes 1 exabyte = 10 9 gigabytes Content delivery: Digital game purchases. Live streaming. Increasing video resolution standards (HDTV, UHDTV ). Cloud computing: Microsoft Azure. Amazon EC2. Chrome OS. Source: Cisco Visual networking Index Global Forecast,
5 Source: Intel website,
6 Silicon Photonics: What about Power? In 2010, Google disclosed a typical global power consumption of ~ 260 Megawatts of power 1. Google s data centres account for less than 1% of the power used by data centres in In 2010, data centres are thought to have accounted for ~1.5% of the global power consumption. If we double bandwidth without increasing power efficiency, we need more power plants! Source: 1 New York Times - Google Details, and Defends, Its Use of Electricity. 2 Jonathon Koomey - Growth in data center electricity use 2005 to Images: Google 6
7 Silicon Photonics: Requirements for Optical Interconnects Optics should ideally use less power than current wire interconnects: <1 pj/bit for off-chip 1,2. < fj/bit for global on-chip 1,2. Image: Intel. CMOS compatibility: Control costs by utilising existing CMOS infrastructure and processes. Components: Light source. Waveguides. Wavelength Division Multiplexers (WDM). Modulators. Detectors. Switches and Routers. Source: 1 D. A. B. Miller, Proc. IEEE 97, (2009). 2 G T Reed et al, Nature Photonics 8, , (2010). 7 Dense spatial connections & WDM (section 2).
8 Silicon Photonics: Why is Silicon Photonics the Answer? The prospect of integrating CMOS electronics and photonics on the same substrate: Greater functionality. Improved performance. Cost reductions. Mature processing derived from years of development in the electronics industry. High refractive index contrast (compact components). Lower power interconnects. Massive interconnect density (WDM). Low cost for mass markets. Image: Intel. 8
9 excellence Silicon Photonics: Market Predictions Source: Silicon Photonics Report - Yole Développement. 9
10 Silicon Photonics: Applications in Quantum Photonics Silicon photonics promises a fully integrated system platform for a range of quantum applications: Quantum Communications. Quantum sensing. Quantum computation and simulation. Devices already demonstrated. Single Photon Source Single Photon Avalanche Detector Davanco et al., Applied Physics Letters, Warburton et al, IEEE Transactions on Electronic Devices,
11 Outline 1. Introduction to silicon photonics. 2. Silicon-Germanium-on-Insulator (SGOI) formed by rapid melt growth (RMG). 3. Prospects for mid-infrared silicon photonics. 11
12 Crystalline SiGe-on-Insulator: Motivation Si Technologies Centre of Excellence 1. Tuneable bandgap (modulators etc.). 2. Tuneable lattice constant (epitaxial growth etc.). 3. Higher carrier mobilities than Si (BiCMOS drivers etc.). 4. Ability to fabricate low power electro-absorption (EA) modulators. Braunstein, R. et. al, Intrinsic optical absorption in germaniumsilicon alloys. Phys. Rev. 109, (1958). Dismukes, J. et. al, Lattice parameter and density in germaniumsilicon alloys. J. Phys. Chem. 68, (1964). 12
13 Crystalline SiGe-on-Insulator: RMG Fabrication Process Si Technologies Centre of Excellence 13
14 Crystalline SiGe-on-Insulator: RMG Growth Mechanism Si Technologies Centre of Excellence SiO 2 Si diffuses from seed into Ge strip whilst in liquid phase forming SiGe. Growth initiates at the Si seed area. Epitaxial growth front propagates along SiGe strip. Defects confined to seed area. 14
15 Crystalline SiGe-on-Insulator: RMG Layer Characterisation Olesinski, R. W. et al. Bulletin of Alloy Phase Diagrams 5, (1984). SiGe composition along straight strips SiGe phase diagram 15
16 Crystalline SiGe-on-Insulator: Composition Profile Engineering Must increase regrowth front propagation speed: Therefore, must increase the cooling rate. SEM Branches, or radiating elements, increase the cooling rate of the central strip 16
17 Crystalline SiGe-on-Insulator: Uniform Composition Uniform composition profile is achieved by narrowing the central strip to 3 µm: Branches provide sufficient cooling for steady-state solidification to occur. C. G. Littlejohns et al, Next generation device grade silicon-germanium on insulator, Scientific Reports, vol. 5, 8288,
18 Crystalline SiGe-on-Insulator: Composition Tuning by Anneal Temperature Higher anneal temperature means that solidification does not begin until more Si has diffused into the SiGe layer. 18
19 Crystalline SiGe-on-Insulator: Composition Tuning by Structural Design Combine straight strip properties with tree-structure properties. Enables, multiple uniform composition SiGe compositions to be simultaneously formed. Only requires one initial deposition step and one anneal step. C. G. Littlejohns et al., Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step, Scientific Reports, vol. 5, 19425,
20 Crystalline SiGe-on-Insulator: Quantum Based Applications Si Technologies Centre of Excellence Seed layer for InGaAs quantum dot lasers. SiGe quantum well based optical interconnects. Rapid melt growth removes the need for thick (8 µm) SiGe buffer layers meaning integration with SOI is much simpler. Liu et al., Nature Photonics, Chaisakul et al., Nature Photonics,
21 Outline 1. Introduction to silicon photonics. 2. Silicon-Germanium-on-Insulator (SGOI) formed by rapid melt growth (RMG). 3. Prospects for mid-infrared silicon photonics. 21
22 Mid-IR Silicon Photonics: Motivation Healthcare Telecomms/datacomms Optical fiber communication Homeland security Mid-IR Photonics Lab on a chip: Infrared spectroscopy aids decease diagnosis Environmental Monitoring Laser detection of explosive devices, or dangerous substances. Most of explosive chemicals show specific absorption footprints in mid-ir region. CO 2, N 2 O, CO, butane & methane etc. have strong absorptions in mid-ir (2 to 5 µm) region. 22
23 Mid-IR Silicon Photonics: Passive Devices Example device - multimode interferometer (MMI): Design optimised using Lumerical Mode Solutions. λ = 2 µm, 400 nm Si / 2 µm BOX SOI wafer. Written by e-beam lithography (EBL). Etched by reactive ion etching (RIE): Slab height = 100 nm. Dimensions Size (μm) W MMI 6 L MMI 26 W in 1.3 S 1.7 Simulated MMI transmission. D 3 23
24 Mid-IR Silicon Photonics: Passive Device Measurements Fabricated MMI. Data normalised using a straight waveguide. The propagation losses for a rib waveguide are around 3~4 db/cm. MMI s are cascaded to calculate insertion loss: Insertion loss: 0.9 ± 0.1 db/mmi. Measured MMI length is 25.2 µm: Device optimised for 26 µm length. Loss = 0.9±0.1dB/MMI Waveguide cross-section. Measured transmission through cascaded MMI s. 24
25 Conclusions Silicon photonics promises to play a significant role in future technology: For this to become a reality mass production is necessary. Rapid melt growth of SGOI enables multiple compositions to be simultaneously grown: High quality material is suitable for state-of-the-art devices, at a low cost. Mid-IR silicon photonics could lead new technologies in sensing: Ge-on-Si platform promises more efficient active devices for mid-ir wavelengths. 25
26 Acknowledgements This work is supported by National Research Foundation of Singapore (NRF-CRP ). Image: NTU Learning Hub HERMES High density Silicon GeRManium integrated photonics
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