1 st generation Laser-Produced Plasma 100W source system for HVM EUV lithography
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1 1 st generation Laser-Produced Plasma 100W source system for HVM EUV lithography Hakaru Mizoguchi Gigaphoton (Japan) 400 Yokokura shinden, ,Oyama, Tochigi, Japan 2010 International Workshop on EUV Sources University College Dublin, November 13-15,
2 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
3 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
4 EUV sources Original technologies LPP:CO 2 laser and Sn source 1 High power pulsed CO2 laser 2 Magnetic field plasma mitigation 3 Pre-Pulse plasma technology Type LPP DPP Maker Gigaphoton Company A Company B Size Large Very Large Small Power (at present) 104W/21W 90W/20W 34W/34W Plasma No electrode No electrode Disc electrode Mitigation Pre pulse + Magnet Gas Gas+mechanical shutter Life limitation ( several 1000 hr ) Several 10 hr Several 10 hr Bottle neck - Mirror Electrode/Mirror Remark Theoretically no limit Engineering items are lot Trade off of power and lifetime Trade off of power and lifetime Trade off of power and beam quality EUV Lithography Symposium 2010 P4
5 EUVA Project (LPP) 1st Mid term 2004/9 2 nd Mid term 2006/3 EUVA -1 final 2008/3 EUVA-2 final ~ 2011/3 Gigaphoton 2011/4 ~ EUV Power (IF) Stability Laser Laser freq. CE (source) Target 5.7W 1) --- YAG:1.5kW 10kHz 0.9% Xe-Jet 10W 1) σ<±10% CO 2 :2.6kW 100kHz 0.9% SnO 2 choroid liquid jet 50W 2) σ <±5% CO 2 : 7.5kW 100kHz 2.5% Sn-Droplet 1 st Generation (ETS) 110W 2) /140W 3) 3σ<±0.3% CO 2 : 10kW 100kHz 4% Sn-Droplet 2 nd Generation (proto/gl200e) 250W (clean@if) 3σ<±0.3% CO 2 : 23kW 100kHz 5% Sn-Droplet EUVA project-1 EUVA project-2 Commercial Note) Primary source to IF EUV transfer efficiency: 1) 43% 2) 28% with SPF 3) 36% without SPF SPF: Spectral Purity Filter IF: Intermediate Focus EUV Lithography Symposium 2010 P5
6 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
7 1 st generation system (ETS device) EUV Lithography Symposium 2010 P7
8 System operation Data (1) Last data (SPIE 2010) Present Average power 14 W 21 W Brightness (@I/F) 69 W 104 W Duty cycle 20 % 20 % Max. non stop op. time >1 hr <1 hr Average CE 2.3 % 2.5 % Dose stability (simulation) (+/- 0.15%) (+/- 0.15%) Droplet diameter 60μm 60μm CO 2 laser power 5.6 kw 7.9 kw EUV Lithography Symposium 2010 P8
9 System operation Data (2) Burst stability data ( 70W open loop ) EUV Lithography Symposium 2010 P9
10 System operation data (3) Fast Ions are perfectly shielded across magnetic field! Ion measurement Magnetically guided EUV plasma observation Laser power 5kW Duty 20% (ON 200msec:OFF 800msec) EUV Lithography Symposium 2010 P10
11 Critical issue investigation (Experiment with research device 10Hz experiment) - Double pulse optimization - Debris mitigation mechanism - Higher Ce investigation EUV Lithography Symposium 2010 P11
12 Liquid droplet experiment EUV Lithography Symposium 2010 P12
13 Liquid droplet experiment with double-pulse Perfect evaporation and high Ce(=2.2%) with double pulse irradiation at around 20 micron Tin droplet is demonstrated. YAG irradiation no CO2 irradiation CO2 irradiation SO-04 T. Hori Investigation on high conversion efficiency and tin debris mitigation for LPP EUV light source. Confidential SO-P15 A. Copyright Sunahara 2010 Radiation GIGAPHOTON Hydrodynamic INC. all rights Simulation reserved. of laser produced EUV Lithography Tin plasma. Symposium 2010 P13
14 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
15 EUV Light Source Major Specifications 2 nd generation GL-200E-proto is under development! Power W 100 >100 >250 >4 Pulse energy mj 1 >1 >2.5 > Max rep rate khz Max Duty Cycle % 75 >75 >75 > Sub systems 1 st generation 2 nd generation EUV model ETS GL200E GL200E GL4 proto Target Material and Shape Sn droplet Sn droplet Sn droplet Sn dr Droplet Diameter micro meter Magnet and Magnet and Magnet and Magne Debris Mitigation cleaning cleaning cleaning clea Collector Mirror Lifetime Bpls 11 >200 >1250 >12 Tool Interface No Yes Yes Ye EUV Lithography Symposium 2010 P15
16 GL200E-proto System Overview Clean room floor EUV chamber Magnet Utility Subfab CO2 laser Pre-pulse laser Chiller EUV Lithography Symposium 2010 P16
17 2 nd gen. high power pulsed CO2 laser system 1 st gen. laser system 2 nd gen. laser system OSC Main-AMP 20kW - Compact: footprint -> <50% - Efficient: Plug in eff. x2 - Higher power: 10kW-> 20kW N BDU 200W Pre-AMP BDU BDU 3kW EUV Lithography Symposium 2010 P17
18 2 nd Gen. CO 2 laser system is under construction EUV Lithography Symposium 2010 P18
19 Main Amplifier performance Main amplifier characteristics : experimental results ~10kW output achieved at 3kW input power Good beam quality: M 2 <2.0 Input - 3kW Main-AMP Output Output beam profile Confidential SO-PO3 T. Copyright Ohta Improving 2010 GIGAPHOTON efficiency INC. of all pulsed rights reserved. CO2 laser system for EUV LPP Lithography EUV light Symposium source P19
20 2 nd Gen. Magnet system is under construction EUV Lithography Symposium 2010 P20
21 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
22 Gigaphoton EUV roadmap 1st source delivery EUV Lithography Symposium 2010 P22
23 Power roadmap (Clean EUV Power) * Against hemisphere (Calculation base) ** w/o SPF EUV Lithography Symposium 2010 P23
24 LPP-EUV Development Facility (1) Shinomiya, Hiratsuka (60km south-west from Tokyo) In industry park of Hiratsuka beside the Sagami river Production capacity is up to 4 units/year (at present) Building is extendable to surrounded open space EUV Lithography Symposium 2010 P24
25 LPP-EUV Development Facility (2) Overview Utility Laboratory Office EUV Lithography Symposium 2010 P25
26 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking through 6.6nm Summary
27 Looking through 6.6nm Base line For 1/2 shorter wavelength generation, 2x higher plasma temperature is needed. On the other hand LPP based on free standing plasma, plasma temperature may not showstopper of EUV generation. Engineering issue Fundamental study of Gd, Tb plasma is important. Also conversion efficiency investigation on the plasma is important for system design. 2x higher exciting power intensity by LPP driver laser. Gd,Tb has similar property with Tin except melting point. ( next table) Around 10 micron droplet generation of very high temperature (>1000 C) materials is key technology. EUV Lithography Symposium 2010 P27
28 EUV emission materials Physical properties Tin Gadolinium Terbium EUV wavelength 13.6nm nm Density (near r.t.) g cm Liquid density at m.p. g cm Melting point C ( F) Boiling point C ( F) (449.47) 2602 (4716) 1312 (2394 ) 3273 (5923) 1356 (2473) 3230 (5846) Heat of fusion kj mol Heat of vaporization kj mol Specific heat capacity (25 C) J mol -1 K - 1 Ionization energies kj mol -1 1st: nd: rd: st: nd: rd: st: nd: rd: 2114 EUV Conversion Efficiency % 3.2 (max.8.0)?? EUV Lithography Symposium 2010 P28
29 Outline Introduction Concept of Gigaphoton LPP source 1 st Generation system data Latest data Critical issue and experimental data 2 nd generation system development Design Status of construction Roadmap update and New facility Looking forward 6.6nm Summary
30 Summary ETS-2 (1 st generation integrated setup LPP source) Latest operation data is reported 104W at duty cycle of 20% (i.e. average power = 21W) Stability under burst operation <+/- 0.23% (dose simulation) Investigation of critical issue is in advance at research device. Under 20 μm Tin droplet evaporated perfectly with double pulse method. 2 nd generation LPP source Construction of 1 st proto machine is on going. CO 2 laser operate with good beam quality around 10kW 30% duty. Super conductive magnet is installed. Product roadmap and new facility Target spec.and schedule of Gigaphoton LPP source product is updated. New EUV facility is introduced. Looking forward 6.7nm Basically LPP-scheme is applicable even on 6.6nm. Fundamental study of Gd, Tb plasma, conversion efficiency investigation is important. 2x higher exciting power intensity by LPP driver laser. Around 10 micron droplet generation of very high temperature (>1000 C) materials is key technology. EUV Lithography Symposium 2010 P30
31 Thanks to funding Acknowledgments This work was partly supported by the New Energy and Industrial Technology Development Organization -NEDO- Japan. Thanks to co-workers Tamotsu Abe, Yukio Watanabe, Takanobu Ishihara, Takeshi Ohta, Tsukasa Hori, Akihiko Kurosu, Hiroshi Komori, Kouji Kakizaki, Akira Sumitani EUVA/Komatsu (Japan): 1200 Manda, Hiratsuka, Kanagawa, , Japan Osamu Wakabayashi, Hiroaki Nakarai, Junichi Fujimoto Gigaphoton (Japan): 400 Yokokura shinden, Oyama, Tochigi, Japan Akira Endo (Present address) Forschungszentrum Dresden-Rossendorf, Dresden, Germany EUV Lithography Symposium 2010 P31
32 EUV Lithography Symposium 2010 P32 xxxxxxxxxx P32
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