Properties of INDIUM PHOSPHIDE ШВШ TU. EMIS Datareviews Series No. 6
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1 Properties of INDIUM PHOSPHIDE ШВШ TU EMIS Datareviews Series No. 6
2 Foreword to Properties of Indium Phosphide Introduction to Properties of Indium Phosphide Contributing Authors Acknowledgements Contents List of Abbreviations *" xi 1. BASIC PHYSICAL PROPERTIES 1 J.C.Brice, A.D.Prins, S.Adachi, K.Haruna, D.J.Dunstan, H.Maeta 1.1 Density of InP Lattice parameter of InP Bulk modulus of InP Stiffness of InP Compliance of InP Piezoelectric constants of InP Thermal expansion coefficient of InP Specific heat of InP Thermal conductivity of InP RESISTIVITY 23 G.W.Iseler, S.J.Pearton, B.J.Sealy 2.1 Resistivity of bulk InP Resistivity of ion-implanted CZ grown InP Resistivity of ion-implanted epitaxial InP CARRIER CONCENTRATIONS AND IONISATION RATES 39 P.Topham, J.P.R.David, A.R.Clawson 3.1 Carrier concentrations in undoped and doped epitaxial InP Carrier concentrations in InP ion implanted with group П elements Carrier concentrations in InP ion implanted with group IV elements Carrier concentrations in InP ion implanted with group VI elements Carrier ionisation rates in InP, electricfieldand orientation dependence Carrier ionisation rates in InP, temperature dependence ELECTRON MOBILITY, DIFFUSION AND LIFETIME 61 D.Lancefield, R.K.Ahrenkiel, B.J.Sealy 4.1 Electron mobility in InP: Overview Electron mobility in bulk InP Electron mobility in LPE InP Electron mobility in VPE and MOVPE InP Electron mobility in MBE InP Electron mobility in ion implanted CZ grown InP Electron diffusion length and diffusion coefficient in p-inp 75 xiv ii in iv ix
3 4.8 Minority-carrier lifetime in InP 4.9 Surface recombination in InP 5. HOLE MOBILITY, DIFFUSION AND LIFETIME W.Siegel, B.J.Sealy, R.K.Ahrenkiel, G.Kuehnel 5.1 Hole mobility in InP: Overview 5.2 Hole mobility in InP, temperature dependence 5.3 Hole mobility in ion-implanted CZ grown InP 5.4 Hole diffusion length in n-inp 6. BAND STRUCTURE A.R.Adams, E.P.O'ReiUy 6.1 Band structure of InP: Overview 6.2 Direct band gap of InP, temperature dependence 6.3 Direct band gap of InP, pressure dependence 6.4 Electron effective mass in InP, pressure dependence 6.5 Hole effective mass in InP, pressure dependence 7. OPTICAL FUNCTIONS A.R.Forouhi, I.Bloomer 7.1 Optical functions of intrinsic InP: General remarks 7.2 Optical functions of intrinsic InP: Static and far-infrared (static IR) 7.3 Optical functions of intrinsic InP: Reststrahlen region 7.4 Optical functions of intrinsic InP: Transparent region 7.5 Optical functions of intrinsic InP: Bandgap region 7.6 Optical functions of intrinsic InP: Visible to UV region 7.7 Extrinsic effects on the optical functions of InP 7.8 Optical functions of InP: Table 8. IR ABSORPTION AND IMPURITY ENERGY LEVELS A.Hennel, M.R.Brozel, W.Szuszkiewicz 8.1 IR absorption bands due to localised vibrational modes of impurities 8.2 Absorption due to free carriers in InP 8.3 Electronic absorption bands of impurities in InP 8.4 Energy level due to Au in InP 8.5 Energy level due to Co in InP 8.6 Energy levels due to Cr in InP 8.7 Energy levels due to Cu in InP 8.8 Energy level due to Fe in InP 8.9 Energy level due to Mn in InP, 8.10 Energy levels due to Ni in InP 8.11 Energy level due to Ti in InP 8.12 Energy level due to V in InP xv
4 9. PHOTOLUMINESCENCE, RAMAN AND REFLECTION SPECTROSCOPY 163 T.S.Kim, B.G.Streetman, T.Inoue, C.S.Menoni, J.Bandet, A.M.Hennel, D.J.Nicholas, F.R.Bacher, G.Irmer, Q.H.Hua, J.Frandon 9.1 Photoluminescence spectra of InP: Overview Photoluminescence of InP at high pressure Photoluminescence spectra of electron-irradiated InP Photoluminescence spectra of InP doped or implanted with group IV elements Photoluminescence spectra of InP doped or implanted with group VI elements Photoluminescence bands of transition metals, rare earths and actinides in InP Photoluminescence spectra of VPE and OMVPE InP Photoluminescence spectra of MBE InP Raman spectra of InP IR reflection spectra of InP PHOTOCONDUCTTvTTY SPECTRA 215 R.A.Stradling 10.1 Far IR photoconductivity spectra of shallow donors in InP: General remarks Far IR photoconductivity spectra of shallow donors in VPE InP Far IR photoconductivity spectra of shallow donors in MOCVD InP Far IR photoconductivity spectra of shallow donors in bulk samples of InP Far IR photoconductivity spectra of shallow donors in LPE and MBE InP Far IR photoconductivity spectra of shallow donors in neutron transmutation doped InP A summary of chemical shifts for different substitutional donors in InP obtained from far IR photoconductivity spectroscopy and a comparison with values obtained for GaAs DEFECTS, DEEP LEVELS AND THEIR DETECTION 227 F.R.Bacher, J.P.Fillard, A.Sibille, L.Haji, B.Lambert, R.Murray, A.R.Peaker, H J.von Bardeleben 11.1 Extended defects in bulk InP ESR and ODMR detection of paramagnetic defects in InP Deep level transient spectroscopy of InP Structure of microprecipitates in SI InP Passivation of defects in InP by hydrogenation Defect energy levels in SI InP Defect energy levels in LPE InP Defect energy levels in VPE and OMVPE InP Defect energy levels in MBE InP Defect energy levels in electron-irradiated InP DIFFUSION OF IMPURITIES 263 I.Harrison 12.1 Diffusion of Cr into InP Diffusion of Fe into InP Diffusion of Cu into InP Diffusion of Ag into InP Diffusion of Au into InP 271 xvi
5 12.6 Diffusion of Zn into InP Diffusion of Cd into InP Diffusion of S into InP Diffusion induced disorder in InGaAsP/InP SURFACE STRUCTURE AND OXIDATION 283 W.H.Makky, C.B.Duke, O.RMonteiro 13.1 Surface structure of clean InP Composition and resistivity of oxidised InP Oxide-InP interface composition and microstructure Oxidation of InP INTERFACES 295 C.M.Aldao, C.B.Duke, A.Katz, I.M.Vitomirov, H.H.Wieder, J.D.Lambkin, L.Burstein, Y.Rosenwaks, J.H.Weaver, Y.Shapira, D.Huppert 14.1 Metal/InP interface atomic geometries of InP with adsorbed overlayers Ohmic contacts to InP and related materials Structure of the Ag/InP interface Structure of the Au/InP interface Barrier height at the Ag/InP interface Barrier height at the Au/InP interface Band bending at dielectric/inp interfaces Conduction band and valence band offset at the InP/InGaAsP interface Gap states at InP surfaces and interfaces Surface recombination velocities at interfaces with InP ETCHING 333 K.Matsushita, S.Adachi, H.L.Hartnagel 15.1 Etching of InP: Overview Wet etching of InP Plasma etching of InP Ion-beam müling and sputter etching of InP Reactive ion and ion-beam etching of InP Laser-assisted etching of InP ION IMPLANTATION 359 B.J.Sealy, R.P.Webb 16.1 Ion implantation of InP: Overview Ion ranges in InP: Discussion Range profile statistics for various ions in InP 365 xvii
6 17. InGaAs AND InGaAsP: MISCELLANEOUS PROPERTIES 371 S.Adachi, A.D.Prins, D.Lancefield, F.R.Bacher, S.J.Pearton, D.J.Robbins, D.J.Dunstan 17.1 Bulk modulus of InGaAsP Strain in InGaAsP-based heterostructures Thermal conductivity of InGaAsP t Band structure of InGaAsP Electron mobility in InGaAs: Overview Defect energy levels in InGaAs Resistivity of ion-implanted epitaxial InGaAsP Optical properties of InGaAsP: Discussion Optical functions of InGaAsP: Tables Linear electro-optic properties of InGaAsP Quadratic electro-optic properties of InGaAsP Franz Keldysh effect in InGaAsP Etching of InGaAsP EXPLOITATION OF InP IN DEVICES 440 J.C.Bouley, P.Topham, J.Mun, S.W.Bland, N.M.Pearsall, R.Hill 18.1 InP based alloys as light sources InP bipolar electronic and opto-electronic circuits InP in FET integrated circuits InP in integrated opto-electronics InP as a solar cell material 478 SUBJECT INDEX 487 xviii
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