Supplementary Figure S1 Parylene roughness. Atomic force microscopy image of
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1 Supplementry Figure S1 Prylene roughness. Atomic force microscopy imge of the thermlly evported prylene lyer on top of the Si/PVA stck. The verge surfce roughness is rms=7nm. 1
2 c Supplementry Figure S2 Trnsistor design, fricted chip nd memrne fter trnsfer on polyimide foil., Bottom gte (35nm of Cr) thin film trnsistor with 15nm of -IGZO, 25nm ALD deposited Al 2 O 3 nd Ti/Au (10nm/60nm) source nd drin contcts. The device consists of Ground-Signl Ground lyout., 2 inches silicon wfer used s crrier fter the completion of the friction. The white, red nd lue ox highlight trnsistors, pssive components nd circuits, respectively. c, Polyimide foil with trnsferred prylene memrne on top. The dhesion is good nd no wrinkles re visile fter the trnsfer. 2
3 Opticl Trnsmission (%) glss sustrte glss + memrne glss + memrne + ITO electronics Wvelength (nm) Supplementry Figure S3 Trnsprent electronics., Memrne with trnsprent trnsistors on ir ules.,opticl trnsmission mesurement of trnsprent TFTs on the memrne trnsferred onto glss support. The opticl losses re out 20% (difference etween glss nd glss+memrne+circuits trnsmission) in the visile spectrum. The oscilltions in the trnsmission re due to interference. 3
4 Drin Current, I D (ma) voltge cycles of trnsprent TFT wrpped round n hir Gte-Source Voltge, V GS Supplementry Figure S4 Voltge cycling test for trnsprent TFT ent round hir. Trnsistors continue to work when ent down to 50μm rdii nd their trnsfer chrcteristic is stle fter 10 consecutive voltge cycles. 4
5 Supplementry Figure S5 Delmintion nd crcks in ITO lyer fter crumpling experiment., Crcks in trnsprent trnsistors fter crumpling., ITO delmintion fter crumpling. 5
6 Drin Current, I D (ma) Drin Current, I D (ma) 10-1 Drin Current Gte Current V DS = 5 V V DS = 0.1 V Gte-Source Voltge, V GS Drin-Source Voltge, V GS Supplementry Figure S6 Electronics on non-conventionl surfces., Photogrph of the memrne trnsferred on plnt lef., Trnsfer nd output (V GS from 3V to 5V with 0.5V step) chrteristic of TFT mesured on lef. 6
7 Drin Current, I DS (A) Drin Current, I D (ma) c efore NCl th fter NCl th nd rinsing efore NCl th fter NCl th nd rinsing Gte-Source Voltge, V GS Drin-Source Voltge, V DS Supplementry Figure S7 Influence of slty solution on the electricl chrcteristics of trnsprent TFTs., Trnsprent trnsistors re immersed in slty solution (1% NCl in wter) which reproduces the humor queous of the eye 1,2. After 1 minute in the solution the devices re not working nymorend lck spots (white circles), which we suppose eing NCl residuls, re visile mostly in correspondence of contcts re., Sme devices of. fter eing rinsed in wter. The lck spots disppered nd the devices work gin. c, Trnsfer (V DS =0.1V, 5V) nd output chrcteristic (V GS =0.5V, 1V, 1.5V, 2V) of trnsistor (W/L=280μm/40μm) efore nd fter immersion in the slty solution nd fter rinsing. For prcticl use of the electronics in the eye environment proper pckging is required. 7
8 Crystlline Silicon (ref. 18) Field effect moility (cm 2 /Vs) Operting voltges I on /I off rtio Minimum ending rdius (mm) Sustrte thickness (μm) Trnsprent > no -IGZO (ref. 16) no CNTs (ref. 21) no Orgnic Mterils (ref. 22) Orgnic Mterils (ref. 26) Si-nnorions (ref. 24) Orgnic Mterils (ref. 25) Electrochemicl TFTs (ref. 26) Reduced grphene oxide (ref. 38) > μm (encpsultion) sustrte free (encpsultion) no - (g m W/L=10μm/5μm, Vg=-0.4V, Vd=0.6V) 1V - - (ggressive crumpling is reported) no no no 2 no yes -IGZO (ref. 39) yes -IGZO (ref. 40) yes MoS 2 /BN (ref. 41) -IGZO (this work) (ε=1.5%) - yes yes Supplementry Tle S1 Comprison with literture dt. Crrier field effective moility, operting voltge, on-off current rtio, ending stility nd thickness of the sustrte reported for inorgnic nd orgnic mterils. 8
9 Supplementry References De Berrdinis, E., Tieri, O., Polzell, A. & Iuglio, N. The chemicl composition of the humn queous 38 He, Q. et l. Trnsprent, Flexile, All-Reduced Grphene Oxide Thin Film Trnsistors. ACS Nno 5, , doi: /nn201118c (2011). 39 Nomur, K. et l. Room-temperture friction of trnsprent flexile thin-film trnsistors using morphous oxide semiconductors. Nture 432, (2004). 40 Mtiveng, M., Choi, M. H., Choi, J. W. & Jng, J. Trnsprent flexile circuits sed on morphousindium gllium zinc oxide thin-film trnsistors. Electron Device Letters, IEEE 32, (2011). 41 Lee, G.-H. et l. Flexile nd Trnsprent MoS2 Field-Effect Trnsistors on Hexgonl Boron Nitride- Grphene Heterostructures. ACS Nno 7, , doi: /nn402954e (2013). 9
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