Fabrication of regular silicon microstructures by photo-electrochemical etching of silicon
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1 phys. stat. sol. (c) 2, No. 9, (2005) / DOI /pssc Fabrication of regular silicon microstructures by photo-electrochemical etching of silicon G. Barillaro *, P. Bruschi, A. Diligenti, and A. Nannini Dipartimento di Ingegneria dell Informazione, Università di Pisa, Via Caruso, Pisa, Italy Received 25 July 2004, revised 14 November 2004, accepted 27 January 2005 Published online 9 June 2005 PACS Cy, Qr, Vp In this paper photo-electrochemical etching of silicon in HF-based solutions is employed as a versatile technique for fabrication of original silicon microstructures, alternative to commonly used methods. Photo-electrochemical etching, a well known technique for regular macropore formation, has been exploited to produce a multitude of different regular silicon microstructures (microtubes, microtips, microchannels, microspirals, micropillars, microwalls, etc.). This micromachining technique is here detailed and some applications are reported. 1 Introduction Bulk silicon micromachining etching techniques [1], which selectively remove material from silicon substrates, are a very powerful tool for fabricating sensors, actuators and passive structures for automotive (i.e. accelerometers, gyroscope), biomedical (i.e. DNA chip), optic (i.e. photonic crystals), space (i.e. field emitter array) applications. For a given application the choice of appropriate etching method depends upon a number of factors, including the shape of the desired structures, the surface roughness, etchant cost, equipment cost, safety and availability. Even if several important properties (etching rate, masking film, etc.) should be considered, bulk micromachining techniques can be basically distinguished on the basis of 1) the degree of anisotropy and 2) the phase (wet or dry) of the etchant. In many cases, such as micromachining of structures as membranes, grooves, etc. isotropic or anisotropic wet chemical etching (HNA, KOH, TMAH, EDP) are fully satisfactory. In other cases, where a high aspect ratio of etched structures is required dry etching methods are more appropriate. Photo-electrochemical etching of silicon in HF-based electrolytes is a well known technique for fabrication of micromachined structures and devices by using porous silicon as sacrificial layer [2]. Moreover, regular macropores formation in n-doped silicon wafers by using this technique has been proposed as well [3, 4]. Applications of such structures to IR filters [5], photonic crystals [6] and micromechanical systems [7] have been reported as well. However, it was only very recently that photo-electrochemical etching has been verified as a tool for bulk silicon micromachining [8]. As a matter of fact, in ref. 8 microstructures with unusual shape (i.e. tubes, tips, channels, squared spirals, pillars, walls, etc.) were fabricated using this technique. In this paper we describe a further improvement of the photo-electrochemical etching of silicon in terms of flexibility, size, shape and porosity, of feasible microstructues. Some applications, as thick silicon oxide layer production and silicon field emitter array fabrication, are briefly reported. * Corresponding author: g.barillaro@ing.unipi.it, Phone: , Fax:
2 phys. stat. sol. (c) 2, No. 9 (2005) / Fabrication process Silicon microstructures were fabricated using the photo-electrochemical etching technique according to the process schematically shown in Fig. 1 (left). The starting material is a n-type silicon wafer, 100 oriented, with (2.4 4) Ω cm resistivity. Patterns are defined on a oxide layer using a standard photolithographic process and Buffered HF (BHF) etch (Fig. 1a). A KOH etching is then used to transfer the pattern to the silicon so producing in the substrate an array of pyramidal notches which is used as a seed for photo-electrochemical etching (Fig. 1b). On the same sample, several different patterns (straight lines, square dots and holes, spirals, meander-shaped lines, and others), with different dimensions and pitches were defined. Electrochemical etching in a HF-based solution is then used to fabricate regular structures in the patterned substrate (Fig. 1c). The samples were rinsed in deionized water and then dried in a convection oven at 95 C for 10 minutes. The samples were finally cleaved to allow SEM (Scanning Electron Microscope) observation of the cross-sections. In Fig. 1 (right) a top view of a regular macropore array, fabricated using the described process, is shown. The front side of the sample is exposed to the electrolyte in a PTFE (Polytetrafluoroethylene) electrochemical cell with a platinum cathode, which is about 5 mm from the sample surface. The electrolyte (HF 48% :C 2 H 5 OH 99,9% :H 2 O, 1:2:17 by volume) is stirred to reduce hydrogen bubble formation. The area of the sample exposed to the electrolyte is about 0.6 cm 2 and has a circular shape. Electron-hole pairs are generated by illuminating the back side of the sample with a 300 W halogen lamp, 15 cm apart from the sample, through a circular window in the aluminum sheet, used to provide the back electrical contact to the sample. The power supply of the lamp can be varied to modulate the etching photocurrent. A Keithley2400 Source Measure Unit was used to apply the anodization voltage and monitor the etching current. All the experiments were executed at room temperature. 3 Experimental results and discussion The regular macropore array reported in Fig. 1(right) is the typical structure fabricated in literature using the photo-electrochemical etching of silicon in HF-based solutions. Regular macropore formation in silicon substrates has been reported for the first time by Lehmann in 1990 [3, 4]. However, for several years, it was thought that only regular macropore array can be produced by means of this etching techa) b) c) HF silicon silicon dioxide Fig. 1 Fabrication process of silicon microstructures (left) and typical macropore array (right) using photoelectrochemical etching of silicon in HF-based solution.
3 3200 G. Barillaro et. al.: Fabrication of regular silicon microstructures nique and that severe limitation exists for its fabrication. The region of stable growth strongly depends on the substrate resistivity. The sensitivity of the system to small variations of pore size and pitch is very high (for instance, a reduction of the pitch by only 3% changes a perfect pore pattern to a defective one). No porosity variation (the porosity, P, is defined as the fraction of removed silicon) can be obtained on the same silicon sample. Fig. 2 SEM photograph of two complementary structures, a pillar array in the left and a tube array in the right, fabricated by photo-electrochemical etching of silicon in HF-based electrolytes. In a recent work, we demonstrated that the commonly accepted constraints on macropore dimension and pitch (once the resistivity of the silicon substrate is chosen) can be significantly relaxed [9]. In ref. [9] regular pores with sides ranging from 2 µm up to 15 µm and pitch variation up to 100% were fabricated on the same Ω cm silicon substrate. Moreover, we showed that macropore formation is just a feature of photo-electrochemical etching and that by changing the initial pattern it is possible to fabricate a variety of silicon microstructures with more complicated shape [8]. As a matter of fact, fabrication of regular arrays of walls, tubes, spirals, pillars was demonstrated. Two impressive examples are shown in Fig. 2. Fig. 3 SEM photograph of the top-view (left) and section (right) of circular silicon spiral array fabricated by using the photo-electrochemical etching in HF-based solutions.
4 phys. stat. sol. (c) 2, No. 9 (2005) / P=60% P=60% P=70% P=60% Reference array Reference array Fig. 4 SEM photograph of adjacent arrays with different pitch, different hole dimension and i) same porosity (left), ii) different porosity (right), fabricated on the same sample. In this paper we describe a further improvement of the photo-electrochemical etching of silicon in terms of flexibility, size and shape, of feasible microstructues. We also demonstrate that it is possible to fabricate structures with different porosity on the same sample. As far as the shape of microstructures is concerned, circular spirals were fabricated, as clearly reveals Fig. 3. In this case, after the lithographic step, an isotropic etchant of silicon (HNA) was used to transfer the pattern to the substrate in order to produce the seed pattern for the electrochemical etching. KOH etching is a crystalline depending wet etching so that it can not be used to produce a circular seed in the substrate, as in the case of a spiral pattern. It is clear from Fig. 3 that photo-electrochemical etching does not depend on the crystalline orientation of the substrate: if (100) oriented silicon is used the trenches grow deep in the substrate independently from the surface orientation of the lithographic pattern, similarly to a dry etching process. This is a remarkable feature of this etching method, unusual for anisotropic silicon wet etching. As far as size, pitch and porosity of feasible structures are concerned, two kinds of seed patterns were etched on the same substrate: the former was constituted of adjacent squared hole arrays with 100% variation of the hole dimension, 100% variation of pitch and same porosity; the latter was constituted of adjacent squared hole arrays with 100% variation of the hole dimension, 50% variation of pitch and different porosity. Right arrays of both the patterns were identical and they were used as reference to study the effect of the pattern dimension on the etching. The resulting structures, after the electrochemical etching step, are shown in Fig. 4. As it is visible in Fig. 4, according to the etched seed: 1) reference arrays still remain identical after the electrochemical etching; 2) arrays in Fig. 4 (left) show 100% variation both of size and pitch and a constant porosity; 3) arrays in Fig. 4 (right) show a 100% variation of the size, 50% variation of pitch and different porosity. The performed experiment shows that: the initial porosity (porosity of the seed) clearly affects the final porosity, in contrast with previously reported results [4, 8]; structures with different porosity can be obtained on the same sample, so enhancing the flexibility of this etching method. The main properties of the proposed technique are: 1) high lateral (parallel to the wafer surface) and vertical (perpendicular to the wafer surface) uniformity; 2) good reproducibility, provided that the etching parameters (voltage, current density, HF concentration, etc.) are fixed; 3) high aspect ratio (over 250) and then high integration density capability; 4) good flexibility about the structure shape; 5) independence from crystalline directions of the substrate; 6) independent control of lateral dimensions (by means of the etching current density) and vertical dimensions (by means of the etching time). The main drawback of the proposed process is given by the presence of the HF, which is a corrosive agent, especially for metals and oxide layers. However, a selective area protection can be achieved by using a Si 3 N 4 layer as a mask.
5 3202 G. Barillaro et. al.: Fabrication of regular silicon microstructures Fig. 5 A 40 µm thick silicon dioxide layer by exploiting the photo-electrochemical etching of silicon. As far as application of this technique is concerned, two very attractive examples can be mentioned: thick ( µm) silicon dioxide layers (Fig. 5) and gated silicon microtips. The latter application is the subject of the paper in ref. 10. Thick silicon dioxide layer have been produced by electrochemical trenching of silicon and refilling of trenches by thermal oxidation [11]. Electrochemical etching was used to fabricate an array of parallel crystalline walls in a silicon substrate. Size and pitch were chosen in order that when all the crystalline silicon of walls was converted to silicon dioxide, trenches were perfectly refilled by the outgrowing oxide itself. 4 Conclusions In this work we demonstrated that photo-electrochemical etching of silicon in HF-based electrolytes can be considered as a promising micromachining technique. This etching method has been demonstrated to be similar to anisotropic dry etching methods. This is an exclusive characteristic with respect to the well known anisotropic wet etching of silicon. The technique has been successfully applied to the fabrication of thick silicon dioxide layer and silicon field emitter array. References [1] E. Petersen and al., Proc. IEEE 86 (8), 1536 (1998). [2] P. Steiner and W. Lang, Thin Solid Films 255, 52 (1995). [3] V. Lehmann and H. Föll, J. Electrochem. Soc. 137, 653 (1990). [4] V. Lehmann, Thin Solid Films 255, 1-4 (1995). [5] V. Lehmann et al., Appl. Phys. Lett. 78, (2001). [6] S. Rowson et al., J. Lightwave Technol. 17, (1999). [7] H.Ohji et al., J. Micromech. Microeng. 10, (2000). [8] G. Barillaro et al., J. Electrochem. Soc. 149, 180 (2002). [9] G. Barillaro et al., Sens. Actuators A 102, (2002). [10] G. Barillaro et al., Extended Abstracts IVth Int. Conf. PSST, 66 (2004) Cullera-Valencia, Spain. [11] G. Barillaro et al., Sens. Actuators A 107, (2003).
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