Positive Photoresists

Transcription

1 Positive Photoresists Gesellschaft für chemische Materialien spezieller Photoresistsysteme mbh Positive Photoresists map 1200 series Thick resists map 1275, map 1275 HV Unique features of the positive photoresists Sensitivity to gline, iline or broadband exposure No post exposure bake Easy removal Readytouse resist solutions in a variety of viscosities Broad process window and easy to handle micro resist technology GmbH Köpenicker Str Berlin GERMANY phone fax mail sales@microresist.de info

2 Positive Photoresist Series Positive Photoresists Resist map 1205 map 1210 map 1215 map 1225 map 1240 Film thickness μm Spin coating 365 nm (broadband exposure) rpm s map 1275 mj cm Resist patterning with mask aligner broadband exposure 1 μm map 1210, 1 μm lines/ 3 μm spaces 2.5 μm map 1225, 2 μm lines/ 4 μm spaces 4 μm map 1240, 3 μm lines/ 5 μm spaces 7.5 μm map 1275, coil, 10 μm trace with map 1200 series for microelectronics and microsystems technology map 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of μm in one spincoating step. Spin curves, 30 s spin time Process flow RIE Photoresist Mask Process flow Electroplating SiO 2 Coat Expose Develop RIE Resist Removal Outstanding pattern stability in wet etch processes and acid and alkaline plating baths Highly stable in dry etch processes e.g. CHF 3, CF 4, SF Aqueous alkaline development Resists available in a variety of viscosities Main applications Mask for etching e.g.si, SiO 2, Other semiconductors, Metals Mask for ion implantation Mould for electroplating Photoresist Mask Plating Base Coat Expose Develop Electroplating Resist Removal 2

3 Thick Positive Photoresists Film thickness 7.5 μm 11 μm 20 μm 30 μm 40 μm 50 μm map 1275 rpm s map 1275 HV rpm s Electroplating Resist pattern reflow 50 μm map 1275 HV mould 40 μm electroplated Ni 20 μm map 1275, 60 μm diameter pillar 30 μm reflowed map 1275, 60 μm diameter map 1275 & map 1275 HV for microsystems technology map 1275 & map 1275 HV are high viscosity positive tone photoresists for film thicknesses of up to 60 μm designed for electroplating structures in microsystems technology and excellently suited for the use as etch mask. Specifically designed for electroplating of structures in microsystems technology High stability in acid and alkaline plating baths Very well suitable also for the use as an etch mask exhibiting high dry and wet etch resistance Good thermal stability of the resist patterns attainable Aqueous alkaline development Side wall angle up to 87 with mask aligner broadband exposure Spin curves, 60 s spin time Main applications Mould for electroplating e.g. for micro coils, micro springs, micro optical components Etch mask for metal and semiconductor substrates e.g. microlenses from reflowed patterns Mask for ion implantation Process flow Electroplating Photoresist Mask Process flow RIE Photoresist Mask Plating Base Coat Expose Develop Electroplating Resist Removal SiO 2 Coat Expose Develop RIE Resist Removal 3

4 micro resist technology GmbH Köpenicker Str Berlin GERMANY phone fax mail info 4 micro resist technology GmbH 05 May 2009

5 Negative Photoresists for UV & Electron Beam Lithography Gesellschaft für chemische Materialien spezieller Photoresistsysteme mbh Negative Photoresists for UV & Electron Beam Lithography micro resist technology GmbH Köpenicker Str Berlin GERMANY man 400 man 1400 man 2400 mrebl 6000 and mruvl 6000 EpoCore and EpoClad Unique features of the negative photoresists Different negative photoresists series designed for various applications: conventional pattern transfer liftoff process use as permanent material Readytouse solutions in a variety of viscosities phone fax mail sales@microresist.de info

6 For Conventional Pattern Transfer and Single Layer LiftOff Negative Photoresists Resist man 400 man 1400 Spectral sensitivity nm nm Exposure 365 nm mj/cm mj/cm 2 Readytouse solutions for various film 3000 rpm Thermal stability Developer man 400 Undercut patterns of 2 μm thick man 400 man μm (on request) man μm (on request) man μm (on request) man μm man μm up to 110 C for metal evaporation mad 332/S and mad 331/S (NaOH based) man μm man μm man μm man μm man μm up to 160 C for metal evaporation and sputtering mad 533/S (TMAH based) man 1400 Undercut patterns of 2 μm thick man 1400 t D = 90 s 0 μm undercut t D = 120 s 1.0 μm undercut t D = 65 s 0.6 μm undercut t D = 100 s 1.7 μm undercut man 400 and man 1400 for conventional pattern transfer, physical vapour deposition (PVD), metal sputtering and liftoff These two series are mainly used as single layer resist for pattern transfer by PVD and liftoff. Tunable pattern profile: vertical to undercut Aqueous alkaline development Good excellent thermal pattern stability High wet and dry etch resistance Easy to remove Main applications Microelectronics and micro system technology Mask for liftoff processes Etch mask for semiconductors and metals Photoresist (SiO 2 ) (Si) Coat, Softbake Crosslinked Photoresist Mask Standard Develop Etch Expose LiftOff Crosslinked Photoresist Metall Develop UV Flood Exposure PVD Remove Resist LiftOff 2

7 For Thin Film EBeam, Deep UV or UV Lithography Resist man 2400 mrebl 6000 mruvl kev Deep UV [248 nm/ 254 nm] UV [ nm] μc/cm μc/cm mj/cm μc/cm μc/cm μc/cm mj/cm 2 Readytouse solutions for various film 3000 rpm Developer man μm man μm man μm man μm mad 525 (TMAH based) mad 332/ mad 331 (NaOH based) mrebl μm mrebl μm mrebl μm mrdev 600 (solvent based) mruvl μm mruvl μm mruvl μm man 2400 mrebl nm thick, chess pattern 100 nm thick, 50 nm L/ S (All pictures Courtesy of IPMT/Jena and HMI Berlin) 100 nm thick, 80 nm dots 100 nm thick, 80 nm L/ S man 2400 and mrebl 6000 for pattern transfer These two series are mainly used for electron beam lithography. man 2400 ebeam & Deep UV sensitive High resolution capability Aqueous alkaline development Liftoff Easy to remove Good thermal stability of the resist patterns High wet and dry etch resistance mrebl 6000 high ebeam sensitivity Excellent thermal stability of the resist patterns High dry and wet etch resistance High resolution capability Post exposure bake (PEB) Development in organic solvents mruvl 6000 for pattern transfer Mainly used for thin layer UV lithography. High dry and wet etch resistance Excellent thermal stability of the resist patterns High resolution capability Post exposure bake (PEB) Development in organic solvents Photoresist (Si) Main applications (SiO 2) Coat, Softbake Crosslinked Photoresist Ebeam exposure (+ PEB for mrebl 6000) Develop RIE Resist Removal Use in micro and nanoelectronics Manufacturing of semiconductor devices Mask for etching, e.g. of Si, SiO 2, Si 3 N 4 or metals Generation of sub 100 nm pattern Generation of stamps with nanopatterns 3

8 For Low Optical Loss Standard Application Negative Photoresists Material EpoCore EpoClad Spectral sensitivity 365 nm 365 nm Characteristics Readytouse solutions for various film thicknesses optically highly transparent material high viscosity material μm μm Developer mrdev 600 (solvent based) Thermal stability up to 230 C Shrinkage < 3 % EpoCore EpoClad flexibilized material, lower refractive index than EpoCore, high viscosity material 50 μm thick 100 μm thick EpoCore and EpoClad for conventional pattern transfer and preparation of polymer waveguides UV sensitive negative resist Highly transparent to visible light Excellent thermal and pressure stability High wet and dry etch resistance Development in organic solvents EpoClad, flood exposed EpoCore Patterning of EpoCore Main applications Specifically designed for optical applications in micro system technology Optical waveguides: EpoCore as core and EpoClad as cladding material Standard FR4 substrates (10 x 10 cm 2, 8 inch) Etch mask EpoClad, flood exposure Lamination Properties of prepared polymer waveguides EpoCore EpoClad Refractive 830 nm Optical loss ~ nm High glass transition temperature > 180 C Excellent stability after lamination UV T > 185 C, pressure 23 kp/cm 2 and reflow tests 3 x C, TCT: 240 x 40 C to 120 C 4 micro resist technology GmbH 05 May 2009

9 UVCurable Hybrid Polymers for Micro Optics Gesellschaft für chemische Materialien spezieller Photoresistsysteme mbh UVCurable Hybrid Polymers for Micro Optics micro resist technology GmbH Köpenicker Str Berlin GERMANY OrmoComp OrmoClear OrmoStamp OrmoCore OrmoClad Unique features Excellent transparency Excellent mechanical properties High chemical and physical stability Excellent pattern transfer fidelity Readytouse solutions Solventfree phone fax mail info

10 UVCurable Hybrid Polymers for Micro Optics OrmoComp and OrmoClear for MicroOptical Components Properties of cured material OrmoComp OrmoClear Thermal behaviour Duromeric Shrinkage (during curing) 5 7 % by volume 3 5 % by volume CTE ( C) Refractive nm Glass substrate Glass substrate coated with 6 μm cured OrmoComp C Optical transparency of OrmoComp Replicated OrmoComp 10x10 micro lens arrays OrmoComp to process by imprinting or UV moulding Exposure: iline, hline, broadband Fast curing Highly transparent for near UV and visible light down to 350 nm High resolution to sub100 nm line width Water absorption < 0.5 % Roughness 2 4 nm High mechanical and thermal stablility 6 months shelf life Solventfree 60 ppm K ppm K Replicated refractive microlenses on a VCSEL wafer substrate (Courtesy of Avalon) Main applications Moulded gratings Micro lenses Micro lens arrays Optical couplers and connectors Prisms Process flow Opaque Stamp Optical grating (Courtesy of FSU Jena) Opaque stamp Hybrid polymer Transparent substrate UV exposure Stamp detachment Thermal treatment OrmoClear to process by imprinting or UV moulding Exposure: iline, hline, broadband Fast curing Highly transparent for near UV and visible light down to 350 nm and at the datacom and telecom wavelengths High mechanical and thermal stability Binary and continuous profile 6 months shelf life Solvent free Main applications Positioning and mechanical alignment features in one mould Single elements or wafer scale Process flow Transparent Stamp Hybrid polymer Transparent stamp Opaque substrate UV exposure Stamp detachment Thermal treatment 2

11 OrmoStamp for Transparent Stamp Fabrication Properties of cured material OrmoStamp CTE ( C) 105 ppm K 1 Elasticity modulus GPa Hardness Refractive nm GPa T [%] OrmoStamp Ormostamp, d = 20 μm [nm] 2 μm 2 μm Optical transparency of OrmoStamp OrmoStamp mould on glass backplane (Courtesy of Profactor e.v.) Nanostructures (60 nm smallest), OrmoStampSFILStamp, (Courtesy of University of Cardiff) mruvcur06 structures (32nd imprint done with an OrmoStamp mould) OrmoStamp to process by UV moulding Costefficient alternative to quartz stamps Excellent fidelity to the master stamp Highly transparent for visible light down to 350 nm High resolution to sub100 nm linewidth Convenient processing with standard lithography equipment Mechanically stable High thermal stability Onestep or twostep stamp fabrication Microstructures replicated with an OrmoStamp mould Glass/ Quartz OrmoStamp Master stamp Adhesion promoter A. OrmoStamp deposition UV light B. OrmoStamp curing and postbake C. Anti sticking layer deposition Anti sticking layer mruvcur06 nanostructures imprinted with an OrmoStamp mould Readytouse working stamp 3

12 UVCurable Hybrid Polymers for Micro Optics OrmoCore and OrmoClad for Optical Wave Guide Fabrication Properties of cured polymer OrmoCore OrmoClad Film quality OrmoCore and OrmoClad to process by conventional lithography or UV moulding Good planarisation properties Water absorption < 0.5 % CTE ( C) ppm K 1 Rms roughness Shrinkage (during curing) Refractive nm Undercladding/ core of a multimode wave guide on silicon (Courtesy of ACREO) Exposure: iline, broadband Tunable refractive index (Core/ Clad) Low optical loss at datacom wavelengths High mechanical and thermal stability 6 months shelf life nm 2 5 % by volume Main applications Singlemode wave guides Multimode wave guides Beam splitters Thermooptical switches Multilayer optical fanout (Courtesy of FHG IOF/ Jena) OrmoCore 635 nm 830 nm 1310 nm 1550 nm 0.2 Refractive index tuning Weight Fraction OrmoClad of OrmoClad Process flow for optical wave guides OrmoClad OrmoClad OrmoCore Coat OrmoClad, prebake Flood exposure, PEB remove of inhibition layer Coat OrmoCore, prebake Waveguide patterning, PEB Development Coat upper cladding, prebake, flood exposure PEB, remove of inhibition layer, hard bake 4 micro resist technology GmbH 05 May 2009 micro resist technology GmbH manufactures UVcurable hybrid polymers for micro optics based on a licence granted by the Fraunhofergesellschaft zur Förderung der Angewandten Forschung in Deutschland e. V.

13 Materials for Nanoimprint Lithography Gesellschaft für chemische Materialien spezieller Photoresistsysteme mbh Materials for Nanoimprint Lithography micro resist technology GmbH Köpenicker Str Berlin GERMANY Polymers for thermal & UVbased nanoimprint lithography Thermoplastics Curing polymers (thermosets) UVcurable polymers Unique features of the nanoimprint polymers Excellent film quality Coating of various substrate materials, e.g. Si, SiO 2, Al Attainable smallest feature size at least 50 nm (depending on mould resolution) Excellent pattern transfer fidelity Safe solvents phone fax mail info

14 Thermoplastics for Thermal Nanoimprint Lithography Materials for Nanoimprint Lithography Thermoplastic Polymer mri 7000E mri 8000E mri T85 mri PMMA ** Glass transition 60 C 115 C 85 C 105 C temperature T g Imprint temperature C C C C Imprint pressure bar bar 5 20 bar bar Readytouse solutions for various film thicknesses * (3000 rpm) mri 7010E 100 nm mri 7020E 200 nm mri 7030E 300 nm mri 8010E 100 nm mri 8020E 200 nm mri 8030E 300 nm mri T nm mri T μm mri T μm 100 nm 300 nm 500 nm Diluents mat 1050 mat 1050 mat 1045 * Different film thicknesses are available on request. ** Available with the low molecular weights 35k or 75k. mri 7000E mri 8000E mri 8000E mri T nm trenches, pitch 300 & 500 nm, Film thickness: 200 nm Imprint: 130 C, 3 min, 50 bar Residual layer thickness < 10 nm 100 nm trenches, pitch 300 nm, Film thickness: 200 nm Imprint: 190 C, 3 min, 50 bar Residual layer thickness < 10 nm mri 7000E & mri 8000E for pattern transfer Superior imprint characteristics: Short cycle times due to fast polymer flow Low imprint pressure Low residual layer thickness High plasma etch resistance comparable to novolakbased photoresists Applications 60 nm trenches, 200 nm pitch, Film thickness: 200 nm Imprint: 135 C, 2 min, 45 bar (Courtesy of LG Elite) Etch mask for pattern transfer processes Fabrication of nanopatterns for: mass data storage, nanooptical devices, subwavelength optical elements, photonic crystals, micro displays, LED Complete device for absorption measurements imprinted in mri T85 (Courtesy of DTU Nanotech) NIL process Thermoplastics Spin coating and baking Mould Polymer g mri T85 for labonachip, microoptics & bio applications Applications Labonachip systems Bio applications Unpolar thermoplastic with very high chemical stability Beneficial flow behaviour during imprinting, low imprint pressure Excellent UV & optical transparency High plasma etch resistance comparable to novolakbased photoresists Fabrication of nano and micropatterns for: microoptical components, waveguides, microfluidics Mould g Anisotropic plasma etch mri PMMA Low molecular weights (35k, 75k) For fundamental nanoimprint investigations 2

15 Curing Polymers for Thermal Nanoimprint Lithography Curing Polymer mrnil 6000 mri 9000E mri 9000M Glass transition temperature before curing Imprint conditions C (isothermal process), bar, UV exposure (broad band or iline) Readytouse solutions for various film thicknesses * (3000 rpm) 40 C 35 C 35 C mrnil nm mrnil nm mrnil nm 120 C, bar 100 C, bar, 2 nd imprint step at 140 C optional to increase thermal stability mri 9010E 100 nm mri 9020E 200 nm mri 9030E 300 nm mri 9030M 300 nm mri 9050M 500 nm mri 9100M 1.0 μm Diluents mat 1045 mat 1045 mat 1045 * Different film thicknesses are available on request. mrnil 6000 mri 9000E mri 9000M NIL process mrnil 6000 Spin coating and prebake UV transparent mould Release layer 100 nm trenches, 300 nm pitch Film thickness: 250 nm Imprint: 100 C, 30 bar 200 nm dots Film thickness: 200 nm Imprint: 120 C, 50 bar Well preserved 200 nm lines & 100 nm trenches after imprint & subsequent annealing to 260 C Solid resist film T i > T g, UV flood exposure and annealing UV uncured cured mrnil 6000 high performance resist Mould T i < T g, cured Combined thermal & UV nanoimprinting Short imprint cycle times, isothermal process: imprinting, UV flood exposure & mould release at the same temperature Very low residual layer thickness (<10 nm) Plasma etch resistance comparable to conventional novolakbased photoresists mri 9000E for pattern transfer Applications Etch mask for pattern transfer processes Permanent structures, e.g. in microfluidics or optics Single & multilayer systems Anisotropic plasma etch NIL process mri 9000E & mri 9000M Short imprint cycle times Thermal curing during imprint Very low residual layer thickness (<10 nm) Plasma etch resistance comparable to conventional novolakbased photoresists mri 9000M for micro & nanofabrication Simultaneous imprint of nano & micropatterns High thermal stability of imprinted patterns up to 260 C Thermal curing during imprint Isothermal mould release (no cooling phase) Applications Etch mask for pattern transfer processes Single & multilayer systems Applications Permanent applications in micro & nanofabrication (e.g. nanoimprint mould) Single & multilayer systems Mould Polymer 3

16 UVcurable Polymers for UVbased Nanoimprint Lithography Materials for Nanoimprint Lithography UVcurable Polymer mruvcur06 mruvcur21 mruvcur21sf Coating method Spin coating Spin coating Dispensing, spin coating Process conditions Smallest feature size Aspect ratio Readytouse solutions for various film thicknesses * (3000 rpm) 50 nm < 2 Imprint: room temperature process, low imprint pressures (>100 mbar), imprint in vacuum or under atmospheric pressure UV exposure: broad band or iline, curing time few seconds < 30 nm > nm 100 nm 200 nm 300 nm < 30 nm > 2 Diluents mrt 1070 mrt 1070 mrt 1070 Adhesion Promoter mraps1 mraps1 mraps1 * Different film thicknesses are available on request for mruvcur21. Imprinted lines, sub30 nm resolution (Courtesy of AMO) Compatibility with various nanoimprint tools Waferscale or step & repeat imprints Superior imprint characteristics: Short cycle times due to fast filling of mould cavities Pattern resolution below 30 nm (mruvcur21, limited by the mould, not by the polymer) Very low residual layer thickness (< 10 nm) Short curing times, low UV doses, compatibility with various UV lamps and filter systems High plasma etch resistance, no residues after oxygen plasma etching 80 nm lines, pattern depth 110 nm (Courtesy of AMO) Applications Etch mask for pattern transfer processes (dry and wet etching) Fabrication of nanopatterns Data storage Nanooptical devices, subwavelength optical elements Photonic crystals Optical metamaterials Micro and nanofluidics Microelectronics 300 nm trenches, residual layer thickness < 10 nm (Courtesy of Profactor) 1.6 μm (spin coating) 500 nm squares transferred into SiO 2 after imprinting, CHF 3 plasma (Courtesy of FSU Jena) UVNIL process Spin coating and softbake Imprint at room temperature UV exposure Mould release Anisotropic plasma etch mould release layer polymer substrate UV light cured polymer 4 micro resist technology GmbH 05 May 2009