Damage in hydrogen plasma implanted silicon
|
|
- Cleopatra Thompson
- 6 years ago
- Views:
Transcription
1 JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 4 15 AUGUST 2001 Damage in hydrogen plasma implanted silicon Lianwei Wang, a) Ricky K. Y. Fu, Xuchu Zeng, and Paul K. Chu b) Department of Physics and Materials Sciences, City University of Hong Kong, Tat Chee Avenue, Kowlong, Hong Kong W. Y. Cheung and S. P. Wong Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Received 20 November 2000; accepted for publication 4 June 2001 The damage and defects created in silicon by hydrogen plasma immersion ion implantation PIII are not the same as those generated by conventional beamline ion implantation due to the difference in the ion energy distribution and lack of mass selection in PIII. Defect generation must be well controlled because damage in the implanted and surface zones can easily translate into defects in the silicon-on-insulator structures synthesized by the PIII/wafer bonding/ion-cut process. The defect formation and its change with annealing temperature were investigated experimentally employing channeling Rutherford backscattering spectrometry, secondary ion mass spectrometry, and atomic-force microscopy. We also calculated the damage energy density of the three dominant hydrogen species in the plasma H,H 2, and H 3 as well as displacement of silicon atoms in the silicon wafer. H 2 creates the most damage because its damage energy density is very close to the silicon threshold energy. The effects of atmospheric gaseous impurities unavoidably coimplanted from the overlying plasma are also modeled. Even though their concentration is usually small in the plasma, our results indicate that these gaseous impurities lead to significant silicon atom displacement and severe damage in the implanted materials American Institute of Physics. DOI: / I. INTRODUCTION Silicon on insulator SOI is an important technology for radiation-hardened integrated circuits as well as low-power, low-voltage, and high-temperature microelectronics. In fact, with the introduction of consumer microelectronic chips fabricated using SOI, SOI is now regarded to be not just the material of the future but also the material of the present. 1,2 Compared to the more mature SOI technologies such as separation by implantation of oxygen SIMOX 3 and smart-cut, 4 synthesis of SOI materials by plasma immersion ion implantation PIII combined with wafer bonding and ion cut is an attractive approach due to the high efficiency of PIII and relatively inexpensive instrumentation. 5 In fact, the cost saving is more significant for 300 mm silicon wafers as the PIII processing time is independent of the wafer dimension. There are many intrinsic differences between PIII and conventional beamline ion implantation. For example, in PIII, all ion species in the overlying plasma are implanted when a negative voltage pulse is applied to the silicon wafer and the ion energy distribution depends on factors such as the sample voltage wave form, plasma sheath propagation, collision effects, and hardware-related issues such as displacement current and cable capacitance. In contrast, the ion a Also affiliated with Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai , China and currently on leave at Delft University of Technology, DIMES TC, Feldmannweg 17, P.O. BOX 5053, 2600 GB, Delft, Netherlands. b Author to whom correspondence should be addressed; electronic mail: paul.chu@cityu.edu.hk beam in beamline ion implantation is mass and energy selected to comprise only one ion species with a specific energy. Therefore, the formation and effects of damage and defects in hydrogen plasma implanted silicon are expected to be different from those of beamline ion implantation. The damage in the hydrogen plasma implanted wafer can conceivably translate into defects in the SOI structure produced by PIII/ion-cut/wafer bonding and impact the yield of the fabrication process. In order to investigate this problem, the following factors must be considered: 6,7 1 The ion implant dose required for the hydrogen PIII layer transfer process is quite large high cm 2 to low cm 2. Therefore, significant crystal damage results in spite of the small hydrogen mass. 2 Different hydrogen ion species exist in the plasma, mainly, H,H 2, and H 3, and all of them are coimplanted into the silicon wafer. The damage profile is different for each ion species due to the difference in the net impact energy for example, each H atom in the H 3 molecular ion possesses 1/3 of the kinetic energy of the H atom in the H atomic ion and dose for instance, there are three hydrogen atoms in each H 3 molecular ion. 3 Since PIII machines are typically not designed for ultra-high-vacuum UHV operation, there are residual oxygen, nitrogen, water, and other atmospheric species in the vacuum chamber. The plasma thus contains some of these ions and they are unavoidably coimplanted into the silicon wafer together with hydrogen. The damage caused by these residual gas species must be taken into account /2001/90(4)/1735/5/$ American Institute of Physics
2 1736 J. Appl. Phys., Vol. 90, No. 4, 15 August 2001 Wang et al. 4 The ion energy distribution is broad due to multiple ion species as well as the low-energy component arising from the nonzero rise and fall times of the sample voltage pulse. In general, a surface dislocation density of less than 50 cm 2 is desired in a production environment. 1 Hence, damage in the plasma implanted wafer must be carefully controlled in each step during the manufacturing process. In this work, the damage characteristics of Si after hydrogen PIII are investigated experimentally using secondary ion mass spectrometry SIMS, channeling Rutherford backscattering spectrometry RBS/C, and atomic-force microscopy AFM. We also use a relatively simple model to derive the damage energy density of the three hydrogen ions as well as gaseous impurity ions. II. EXPERIMENT Boron-doped p-type Si 100 with a resistivity of cm was hydrogen plasma implanted using our semiconductor PIII instrument. 8 The base pressure in the vacuum chamber was Torr. Before implantation, highpurity hydrogen gas was bled into the chamber to establish a working pressure of Torr. The PIII experiments were conducted at a bias voltage of 25 kv, current of A, pulsing frequency of 200 or 300 Hz, and pulse duration of 30 s. The hydrogen implant dose was calculated based on the SIMS results using a relative sensitivity factor derived from standard ion implant materials. A simple wet cleaning process was carried out to remove some surface contaminants before the SIMS measurements. The damage characteristics of the as-implanted and annealed samples 200 and 400 C were assessed using helium RBS/C. The incident energy was 2 MeV and the backscattering angle was 170. The surface morphology of the samples was studied by AFM and it was conducted using a Park Instrument SPM machine at room temperature and atmospheric pressure. III. RESULTS AND DISCUSSION In PIII, there is no mass selection and this is one of the reasons why PIII boasts a high ion flux and throughput. However, it also means that all the ions in the plasma are implanted into the wafer simultaneously. A typical hydrogen plasma consists of three dominant ions, H,H 2, and H 3, and their implantation into Si can be easily verified by fitting the SIMS hydrogen depth profile. According to the molecular ion implantation theory, 9 the net ion energy is given by Em/M, where E is the energy of the molecular ion, m is the mass of the atom, and M is the total mass of the molecule. Hence, the hydrogen atoms in these three ion species have different net implant energies. For example, each hydrogen atom in the H 3 molecular ion has 1/3 of the implant energy and, consequently, smaller penetrating depth. Since the nuclear stopping power is a function of the ion energy, the damage profile is different for the three hydrogens containing ions. In our fits, we use the following simple relationship: FIG. 1. Hydrogen depth profile acquired by SIMS from hydrogen plasma implanted silicon 300 Hz pulsing frequency and 30 min implantation time and the theoretical fit using overlapping H,H 2, and H 3 Gaussian distributions. Hydrogen diffusion that causes broadening of the half width and depth shift nm due to the surface treatment has been considered. The high surface peak in the SIMS profile is a measurement artifact. n N x i 1 d i 2 pi exp x R 2 pi 2, 1 2 pi where N(x) is the density of H ions at distance x from the surface, d i is the dose of the ith species, R pi is the project range of the ith species, and pi is the straggle which can be obtained from TRIM simulation. However, considering the heating effects during implantation, hydrogen diffusion needs to be taken into account as well. Moreover, surface oxidation during PIII and the surface treatment before SIMS measurement may cause a small shift in the depth profile measurement. Figure 1 depicts the hydrogen SIMS depth profile of the sample implanted at 300 Hz for 30 min, and the integrated ion dose was calculated to be cm 2. This dose is typical of the ion-cut process by PIII. Using TRIM and Eq. 1, we fit the SIMS data and the doses are determined to be , , and cm 2 for H,H 2 and H 3, respectively. The sum of the ion doses from the fit is cm 2. The difference between the fitted value and measured result is due to surface hydrogen that contributes to the SIMS result but not to the modeled value. To investigate the damage, we derive the damage energy density using these experimentally determined doses and the following relationship: 10 e d x D de d x, 2 N Si dx where e d (x) is the damage energy density in ev/atom, D is the dose, N Si is the atomic density of Si ( /cm 3, and de d (x)/dx is the nuclear stopping energy, which can be directly calculated by TRIM. The calculated damage energy densities for H, H 2, and H 3 are 2.1, 15, and 12.6 ev/ atom, respectively, and the simulated damage atomic displacement distribution is exhibited in Fig. 2. Here, we consider that the atomic displacement is mainly caused by
3 J. Appl. Phys., Vol. 90, No. 4, 15 August 2001 Wang et al FIG. 2. Calculated composite damage distribution dpa displacement per atom at an implantation voltage of 25 kv using H,H 2, and H 3 with doses of , , and cm 2, respectively. nuclear stopping. 11,12 Comparing the composite damage energy density of H,H 2, and H 3 with the threshold energy of Si about 15 ev, our hydrogen PIII process causes significant damage to the crystal structure of silicon and can render the region in the vicinity of the projection range R p amorphous. It should also be pointed out that a high concentration of implanted hydrogen will cause high pressure or stress within the Si crystal, contributing to additional damage to the crystal structure. 13 Figure 3 shows the RBS/C spectra of the sample implanted at 200 Hz and for 30 min, and those of the sample annealed at 400 C are displayed in Fig. 4. Comparison between the random and channeled spectra shows that the damage layer in both samples is almost amorphous and the thickness is approximately 170 nm. The damage profile acquired from a smaller implant dose sample is exhibited in Fig. 5. However, such a small implantation dose is inadequate for effective microcavity formation and ion cut, and so there is no practical need to investigate the latter case. Figure 5 shows that a lower dose implant 25 kv, 200 Hz, 10 min leads to a thinner damage layer about 70 nm in thickness. FIG. 4. RBS/C spectrum acquired from the hydrogen PIII sample shown in Fig. 2 after annealing at 400 C for 2 h. In this case, the damage caused by residual gaseous impurities is relatively significant, and this issue will be discussed later in this article. Piatkowska, Gawlik, and Jagielski 14 studied the relationship between the surface morphology and hydrogen implant dose in beamline ion implantation. They, however, did not present detailed results on the change of surface morphology with temperature. Here, we show the surface morphological change in the as-implanted and annealed samples. Figure 6 depicts the AFM topographic maps of the as-implanted and annealed hydrogen PIII samples, and the change in the surface roughness as indicated by our root-mean-square rms calculation in a 5 m 5 m region for different annealing temperatures is shown in Table I. Based on the observed increase in the surface roughness with the anneal temperature, the hydrogen movement or coalescence process during annealing plays an important role in the surface morphology, even though the change in the RBS channeling behavior after FIG. 3. Channeling RBS RBS/C spectrum acquired from a hydrogen PIII sample 300 Hz and 30 min. FIG. 5. RBS/C spectrum acquired from a lower dose sample 200 Hz and 10 min.
4 1738 J. Appl. Phys., Vol. 90, No. 4, 15 August 2001 Wang et al. FIG. 6. AFM topographical map of the hydrogen PIII samples 300 Hz and 30 min : a as implanted and b after annealing at 400 C for 2 h. annealing at 400 C is not obvious. It should be noted that our work focuses on temperature at or below 400 C because in the hydrogen PIII/ion-cut process, an implantation temperature of 400 C or higher will cause hydrogen bubble formation or blistering and, consequently, premature exfoliation. As an interstitial atom with a dissolution enthalpy of 0.8 ev, hydrogen displays an extraordinary chemical reactivity to silicon, leading to the formation of point and extended defects irrespective of its atomic or molecular state. Cerofolini et al. 15 investigated the bubble formation in H and He implanted Si and deduced the change of the enthalpy in the Si H 2 system with respect to temperature, hydrogen concentration, and other factors. One of the important factors influencing the surface morphology is internal stress caused by the high pressure exerted by hydrogen in the microvoids. This stress leads to an increase of the surface roughness, and finally, surface blistering at a high enough temperature or under mechanical stress. Normally, for a Si wafer implanted with a hydrogen dose higher than cm 2, surface blistering will occur and become visible when the wafer is heated to 450 C. At a higher implant dose, the required temperature is lower and this is also true in the case of boron coimplantation. Figure 6 b confirms the gradual change in the surface morphology that eventually leads to surface blistering. For the ion-cut process, the generation of a sufficient amount of bubbles or microcavities is necessary. However, since the damage and defects cannot be annealed out at low temperature, a paradox is created when a high-temperature treatment before wafer bonding is not feasible. The broad damage zone buried in the SOI structure will affect recrystallization of the transferred layer during the subsequent solid-state reaction at high temperature. One can argue that if hydrogen PIII is conducted on a silicon wafer with a pregrown thin surface oxide, the damage region on the surface can be confined to the oxide that can be removed prior to wafer bonding. However, our RBS results Figs. 3 5 show that the damage zone stretches all the way from the vicinity of the ion-projected range to close to the surface. In addition, oxygen recoil may cause other problems and the damage created in the bulk cannot be circumvented totally. Figure 5 shows that surface damage is still serious even when the dose is lower. According to our previous studies, under typical conditions, contaminants such as oxygen, nitrogen, and carbon in the plasma constitute a few percent of the total ion current in hydrogen PIII. 16 This is because PIII equipment is usually not designed for UHV conditions. For a total ion implant dose in the high to low cm 2, the oxygen, nitrogen, and carbon ion doses may be close to or exceed cm 2. Based on our experimental results at 25 kv for an oxygen dose of cm 2, we calculate damage energy densities of 29.3 and 33.5 ev/atom for O and TABLE I. Root-mean-square rms surface roughness values of the asimplanted sample and samples annealed at 200, 300, and 400 C. As implanted 200 C 300 C 400 C Surface roughness rms nm FIG. 7. Calculated damage distribution profile of Si atoms dpa displacement per atom in 25 kv oxygen plasma implanted samples.
5 J. Appl. Phys., Vol. 90, No. 4, 15 August 2001 Wang et al TABLE II. Calculated damage energy densities of carbon and nitrogen N and N 2 in Si implantation energy 25 kev. Ion species C N N 2 Implantation energy kev Implantation dose ions cm Projection range R p / 75.7/ / /17.6 longitudinal straggling nm Damage energy density ev/atom O 2, respectively. The simulated displacement of Si atoms is shown in Fig. 7. The calculated damage energy densities of nitrogen and carbon are listed in Table II for the same implant conditions 25 kv. In spite of their small percentage, the presence of gaseous contaminants can significantly increase the damage. These contaminant ions are heavier and the damage zone is closer to the surface. Hence, the RBS/C spectrum shown in Fig. 5 makes sense. This damage region is buried in the SOI structure after layer transfer, that is, close to the buried oxide, and affects recrystallization even more severely. This contamination issue must be addressed properly in experiments, for instance, by using better vacuum and pumping devices. IV. CONCLUSION The damage in hydrogen plasma implanted Si has been investigated experimentally and theoretically. Our RBS/C results indicate that the damaged layer is quite broad, and different from that observed in single-energy beamline ion implantation in which the damage only occurs near the projected range of the implanted ions. The broadness of the damage zone is attributed to different ion species from the plasma implanted to different depths. Finally, we discuss the contribution of inevitable coimplanted gaseous contaminants. Even though they are small in percentage, our damage energy density and silicon atom displacement calculations reveal the severity of the effects, and care must, therefore, be exercised in reducing the amount of these gaseous species in PIII equipment. ACKNOWLEDGMENTS The work was jointly supported by the Hong Kong Research Grants Council CERG Grant No or CityU Grant Nos. 1003/99E and or CityU Grant No. 1032/ 00E, the City University of Hong Kong SRG Grant No , and the Chinese NSF Grant No J.-P. Colinge, Silicon-on-Insulator Technology, Materials to VLSI, 2nd ed. Kluwer Academic, Dordrecht, S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-on- Insulator Materials and Devices Kluwer Academic, Dordrecht, L. Alles, P. Dolan. M. J. Anc, P. Allen, F. Cordts, and T. Nakai, Proc. IEEE Int. SOI Conf. 1997, p.10 unpublished. 4 M. Bruel, B. Aspar, B. Charlet, C. Maleville, T. Poumeyrol, A. Soubie, A. J. Auberton-Herve, J. M. Lamure, T. Barge, F. Metral, and S. Trucchi, Proc. IEEE Int. SOI Conf. 1995, p.178 unpublished. 5 W. G. En, I. J. Malik, M. A. Bryan, S. Farrens, F. J. Henley, N. W. Cheung, and C. Chan, Proc. IEEE Int. SOI Conf. 1998, p.163 unpublished. 6 P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and L. A. Larson, Mater. Sci. Eng., R. R17, Z. Fan, Q. C. Chen, P. K. Chu, and C. Chan, IEEE Trans. Plasma Sci. 26, P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and P. K. Ko, IEEE Trans. Plasma Sci. 26, S. Prussin, in Ion Implantation in Semiconductors, edited by S. Namba Plenum, New York, 1975, p J. Ziegler, J. Biersack, and U. Littmar, in The Stopping and Range of Ions in Solids Pergamon, New York, S. Tian, M. F. Morris, S. J. Morris, B. Obradovic, G. Wang, A. F. Tasch, and C. M. Snell, IEEE Trans. Electron Devices 45, W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, and S. Selberherr, IEEE Trans. Comput.-Aided Des. 17, G. F. Cerofolini, G. Calzolari, F. Corni, C. Nobili, G. Ottaviani, and R. Tonini, Mater. Sci. Eng., B 71, A. Piatkowska, G. Gawlik, and J. Jagielski, Appl. Surf. Sci. 141, G. F. Ceroflini, F. Corni, S. Frabboni, C. Nobili, G. Ottaviani, and R. Tonini, Mater. Sci. Eng., R. 27, Z. Fan, X. Zeng, P. K. Chu, C. Chan, and M. Watanabe, Nucl. Instrum. Methods Phys. Res. B 155,
Ferroelectric Oxide Single-Crystalline Layers by Wafer Bonding and Hydrogen/Helium Implantation
Mat. Res. Soc. Symp. Proc. Vol. 748 2003 Materials Research Society U11.8.1 Ferroelectric Oxide Single-Crystalline Layers by Wafer Bonding and Hydrogen/Helium Implantation Ionut Radu, Izabela Szafraniak,
More informationElectrical Properties of Ultra Shallow p Junction on n type Si Wafer Using Decaborane Ion Implantation
Mat. Res. Soc. Symp. Proc. Vol. 686 2002 Materials Research Society Electrical Properties of Ultra Shallow p Junction on n type Si Wafer Using Decaborane Ion Implantation Jae-Hoon Song, Duck-Kyun Choi
More information1. Introduction. What is implantation? Advantages
Ion implantation Contents 1. Introduction 2. Ion range 3. implantation profiles 4. ion channeling 5. ion implantation-induced damage 6. annealing behavior of the damage 7. process consideration 8. comparison
More informationRecent developments and applications of plasma immersion ion implantation
Recent developments and applications of plasma immersion ion implantation Paul K. Chu a) Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong Received
More informationGermanium surface hydrophilicity and low-temperature Ge layer transfer by Ge SiO 2 bonding
Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge SiO 2 bonding Xiaobo Ma State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai
More informationHigh Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates
High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates Jim Sullivan, Harry R. Kirk, Sien Kang, Philip J. Ong, and Francois J. Henley Silicon
More informationIsolation of elements
1 In an IC, devices on the same substrate must be isolated from one another so that there is no current conduction between them. Isolation uses either the junction or dielectric technique or a combination
More informationSt.JOHNS COLLEGE OF ENGINEERING AND TECHNOLOGY,
PRESENTED BY S.SRIKANTH REDDY Y.MARUTHI III B.tech III.B.tech Sri.prince087@gmail.com St.JOHNS COLLEGE OF ENGINEERING AND TECHNOLOGY, YERRAKOTA, YEMIGANUR, KURNOOL (Dist), ANDHRA PRADESH. ABSTRACT VLSI
More informationImplant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique
Implant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique Adam Bertuch a, Wesley Smith a, Ken Steeples a, Robert Standley b, Anca Stefanescu b, and Ron Johnson c a QC Solutions Inc.,
More informationChicane Deceleration An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation
Chicane Deceleration An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation N. White a, J. Chen a, C. Mulcahy b, S. Biswas b, R. Gwilliam c. a Advanced Ion Beam Technology
More informationThe Structural and Electron Field Emission Properties of Ion- Beam-Synthesised Metallic-Dielectric Nanocomposites
The Structural and Electron Field Emission Properties of Ion- Beam-Synthesised Metallic-Dielectric Nanocomposites W.M. Tsang 1, V. Stolojan 1, S.P. Wong 2, J.K.N. Linder 3, B.J. Sealy 1 and S.R.P. Silva
More informationRadiation Tolerant Isolation Technology
Radiation Tolerant Isolation Technology Background The following contains a brief description of isolation technologies used for radiation hardened integrated circuits. The technologies mentioned are junction
More informationStrålningsskador vt 2014 Säteilyvauriot kl 2014 Radiation Damage Spring term Macroscopic/application consequences of irradiation
Strålningsskador vt 2014 Säteilyvauriot kl 2014 Radiation Damage Spring term 2014 10. Macroscopic/application consequences of irradiation 10.1 Consequences of irradiation at what scale? Most of the consequences
More informationMicroscopic Damage of Tungsten and Molybdenum Exposed to Low-Energy Helium Ions
Plasma Science and Technology, Vol.17, No.4, Apr. 2015 Microscopic Damage of Tungsten and Molybdenum Exposed to Low-Energy Helium Ions FAN Hongyu ( ) 1,3, YANG Qi ( ) 1,3,LIXin( ) 1,3, NI Weiyuan ( ) 1,3,NIUJinhai(
More informationIon channeling effects on the focused ion beam milling of Cu
Ion channeling effects on the focused ion beam milling of Cu B. W. Kempshall a) and S. M. Schwarz Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, P.O. Box
More informationDiffusion of Fission Products through Silicon Carbide
AP/P5-03 Diffusion of Fission Products through Silicon Carbide E. Friedland 1, N.G. van der Berg 1, J.B. Malherbe 1, J.J. Hancke 2, J. Barry 2, E.Wendler 3, W.Wesch 3 1 Physics Department, University of
More informationLecture 12. Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12. ECE Dr. Alan Doolittle
Lecture 12 Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12 Evaporation and Sputtering (Metalization) Evaporation For all devices, there is a need to go from semiconductor to metal.
More informationRadiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
Solid State Phenomena Vols. 131-133 (2008) pp. 201-206 online at http://www.scientific.net (2008) Trans Tech Publications, Switzerland Online available since 2007/10/25 Radiation Defects and Thermal Donors
More informationCathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si SiO 2 interfaces
Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si SiO 2 interfaces A. P. Young a) Department of Electrical Engineering, The Ohio State University, Columbus,
More informationThermal Evaporation. Theory
Thermal Evaporation Theory 1. Introduction Procedures for depositing films are a very important set of processes since all of the layers above the surface of the wafer must be deposited. We can classify
More informationFigure 2.3 (cont., p. 60) (e) Block diagram of Pentium 4 processor with 42 million transistors (2000). [Courtesy Intel Corporation.
Figure 2.1 (p. 58) Basic fabrication steps in the silicon planar process: (a) oxide formation, (b) selective oxide removal, (c) deposition of dopant atoms on wafer, (d) diffusion of dopant atoms into exposed
More informationExcimer Laser Annealing of Hydrogen Modulation Doped a-si Film
Materials Transactions, Vol. 48, No. 5 (27) pp. 975 to 979 #27 The Japan Institute of Metals Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film Akira Heya 1, Naoto Matsuo 1, Tadashi Serikawa
More informationIsolation Technology. Dr. Lynn Fuller
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Isolation Technology Dr. Lynn Fuller Motorola Professor 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041
More informationFabrication Technology
Fabrication Technology By B.G.Balagangadhar Department of Electronics and Communication Ghousia College of Engineering, Ramanagaram 1 OUTLINE Introduction Why Silicon The purity of Silicon Czochralski
More informationMethod to obtain TEOS PECVD Silicon Oxide Thick Layers for Optoelectronics devices Application
Method to obtain TEOS PECVD Silicon Oxide Thick Layers for Optoelectronics devices Application ABSTRACT D. A. P. Bulla and N. I. Morimoto Laboratório de Sistemas Integráveis da EPUSP São Paulo - S.P. -
More informationGrowth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties
Journal of Multidisciplinary Engineering Science and Technology (JMEST) Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties Ahmed K. Abbas 1, Mohammed K. Khalaf
More informationEnhancement of corrosion resistance of AISI 420 stainless steels by nitrogen and silicon plasma immersion ion implantation
Surface & Coatings Technology 201 (2007) 4879 4883 www.elsevier.com/locate/surfcoat Enhancement of corrosion resistance of AISI 420 stainless steels by nitrogen and silicon plasma immersion ion implantation
More informationOxide Growth. 1. Introduction
Oxide Growth 1. Introduction Development of high-quality silicon dioxide (SiO2) has helped to establish the dominance of silicon in the production of commercial integrated circuits. Among all the various
More informationFe doped Magnetic Nanodiamonds made by Ion
Fe doped Magnetic Nanodiamonds made by Ion Implantation ChienHsu Chen a, I.C. Cho b, Hui-Shan Jian c and H. Niu a* a Nuclear Science and Technology Development Center, National Tsing Hua University, HsinChu
More informationThis article was originally published in a journal published by Elsevier, and the attached copy is provided by Elsevier for the author s benefit and for the benefit of the author s institution, for non-commercial
More informationRaman and ion channeling analysis of damage in ion-implanted Gab: Dependence on ion dose and dose rate
Raman and ion channeling analysis of damage in ion-implanted Gab: Dependence on ion dose and dose rate U. V. Desnica Ruder Boskovic Institute, 41000 Zagreb, Croatia, Yugoslavia J. Wagner Fraunhofer-Institut
More informationAjay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University
2014 Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University Page1 Syllabus UNIT 1 Introduction to VLSI Technology: Classification of ICs, Scale of integration,
More informationEffects of D and He Implantation Depth on D Retention in Tungsten Under
Effects of D and He Implantation Depth on D Retention in Tungsten Under Simultaneous D-He Ion Irradiation T.J. Finlay 1, J.W. Davis 1, K. Sugiyama 2, V.Kh. Alimov 3, A.A. Haasz 1 1 University of Toronto
More informationSchottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts
Schottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts Christopher E. D. Chidsey Department of Chemistry Stanford University Collaborators: Paul C. McIntyre, Y.W. Chen, J.D. Prange,
More informationRoles of Impurities and Implantation Depth on He + - Cavity Shape in Silicon
MRS Proceedings; volume 864 / 2005 Roles of Impurities and Implantation Depth on He + - Cavity Shape in Silicon Gabrielle Regula, Rachid El Bouayadi, Maryse Lancin, Esidor Ntsoenzok 1, Bernard Pichaud,
More informationFormation, evolution, and annihilation of interstitial clusters in ion-implanted Si
PHYSICAL REVIEW B, VOLUME 63, 195206 Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si Sebania Libertino and Salvatore Coffa CNR-IMETEM, Stradale Primosole 50, I-95121
More informationVisco-elastic model of the fuzz growth (P64B)
Visco-elastic model of the fuzz growth (P64B) S. I. Krasheninnikov* University California San Diego, La Jolla, CA 92093, USA PACS numbers: 47.55.dd, 52.40.Hf Abstract The visco-elastic model of fuzz growth
More informationSection 4: Thermal Oxidation. Jaeger Chapter 3. EE143 - Ali Javey
Section 4: Thermal Oxidation Jaeger Chapter 3 Properties of O Thermal O is amorphous. Weight Density =.0 gm/cm 3 Molecular Density =.3E molecules/cm 3 O Crystalline O [Quartz] =.65 gm/cm 3 (1) Excellent
More informationProcess Flow in Cross Sections
Process Flow in Cross Sections Process (simplified) 0. Clean wafer in nasty acids (HF, HNO 3, H 2 SO 4,...) --> wear gloves! 1. Grow 500 nm of SiO 2 (by putting the wafer in a furnace with O 2 2. Coat
More informationAnomaly of Film Porosity Dependence on Deposition Rate
Anomaly of Film Porosity Dependence on Deposition Rate Stephen P. Stagon and Hanchen Huang* Department of Mechanical Engineering, University of Connecticut, Storrs, CT 06269 J. Kevin Baldwin and Amit Misra
More informationFinal report. Low-Dose Low-Energy SIMOX for Fully-Depleted Silicon-on-Insulator (SOI)
Final report Low-Dose Low-Energy SIMOX for Fully-Depleted Silicon-on-Insulator (SOI) Phase I March 27,998 Sponsored by Defense Advanced Research Projects Agency ETO Dr. Dan Radack 370 North Fairfax Drive
More informationVisualization and Control of Particulate Contamination Phenomena in a Plasma Enhanced CVD Reactor
Visualization and Control of Particulate Contamination Phenomena in a Plasma Enhanced CVD Reactor Manabu Shimada, 1 Kikuo Okuyama, 1 Yutaka Hayashi, 1 Heru Setyawan, 2 and Nobuki Kashihara 2 1 Department
More informationThe formation of a continuous amorphous layer by room.. temperature implantation of boron into silicon
The formation of a continuous amorphous layer by room.. temperature implantation of boron into silicon K. S. Jones Department a/materials Science and Engineering, University of Florida, Gainesville, Florida
More informationFabrication of Silicon-on-Insulator (SOI) and Strain- Silicon-on-Insulator (ssoi) Wafers Using Ion Implantation
Fabrication of Silicon-on-Insulator (SOI) and Strain- Silicon-on-Insulator (ssoi) Wafers Using Ion Implantation Devendra K. Sadana IBM Watson Research Center, Yorktown, NY 10598 dksadana@us.ibm.com Michael
More informationThin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Sputtering: gas plasma transfers atoms from target to substrate Can deposit any material
Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Sputtering: gas plasma transfers atoms from target to substrate Can deposit any material on any substrate (in principal) Start with pumping down
More informationIn-Situ Low-Angle Cross Sectioning: Bevel Slope Flattening due to Self-Alignment Effects
In-Situ Low-Angle Cross Sectioning: Bevel Slope Flattening due to Self-Alignment Effects UWE SCHEITHAUER SIEMENS AG, CT MM 7, Otto-Hahn-Ring 6, 81739 München, Germany Phone: + 49 89 636 44143 E-mail: uwe.scheithauer@siemens.com
More informationVLSI Technology. By: Ajay Kumar Gautam
By: Ajay Kumar Gautam Introduction to VLSI Technology, Crystal Growth, Oxidation, Epitaxial Process, Diffusion Process, Ion Implantation, Lithography, Etching, Metallization, VLSI Process Integration,
More informationX-ray Photoelectron Spectroscopy
X-ray Photoelectron Spectroscopy X-ray photoelectron spectroscopy (XPS) is a non-destructive technique used to analyze the elemental compositions, chemical and electronic states of materials. XPS has a
More informationMolecular dynamic simulations of the high-speed copper nanoparticles collision with the aluminum surface
Journal of Physics: Conference Series PAPER OPEN ACCESS Molecular dynamic simulations of the high-speed copper nanoparticles collision with the aluminum surface Related content - Controllable synthesis
More informationModeling of Local Oxidation Processes
Introduction Isolation Processes in the VLSI Technology Main Aspects of LOCOS simulation Athena Oxidation Models Several Examples of LOCOS structures Calibration of LOCOS effects using VWF Field Oxide
More informationION-IMPLANTED PHOTORESIST STRIPPING USING SUPERCRITICAL CARBON DIOXIDE
ION-IMPLANTED PHOTORESIST STRIPPING USING SUPERCRITICAL CARBON DIOXIDE K. Saga, H. Kuniyasu, and T. Hattori, M. B. Korzenski*, P.M. Visintin*, T. H. Baum* Sony Corporation Atsugi 243-8585 JAPAN Advanced
More informationADVANCED SILICON-ON-INSULATOR TECHNOLOGY
ADVANCED SILICON-ON-INSULATOR TECHNOLOGY It is projected that by the year 2000, high-performance VLSl technologies will use silicon-on-insulator (Sol) substrate wafers. Bond-and-etchback SO1 (BESOI) is
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Correlation between Microstructure and Mechanical Properties of TiC Films Produced by Vacuum arc Deposition and Reactive
More informationBoron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers
Mat. Res. Soc. Symp. Proc. Vol. 810 2004 Materials Research Society C3.5.1 oron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers M. S. Carroll 1 J. C. Sturm, Dept. of Electrical Engineering,
More informationZnO-based Transparent Conductive Oxide Thin Films
IEEE EDS Mini-colloquium WIMNACT 32 ZnO-based Transparent Conductive Oxide Thin Films Weijie SONG Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
More informationHigh-Resolution, Electrohydrodynamic Inkjet Printing of Stretchable, Metal Oxide Semiconductor Transistors with High Performances
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2016 ` Electronic Supplementary Information High-Resolution, Electrohydrodynamic Inkjet Printing of
More informationCo-Evolution of Stress and Structure During Growth of Polycrystalline Thin Films
Co-Evolution of Stress and Structure During Growth of Polycrystalline Thin Films Carl V. Thompson and Hang Z. Yu* Dept. of Materials Science and Engineering MIT, Cambridge, MA, USA Effects of intrinsic
More informationMicro-Electro-Mechanical Systems (MEMS) Fabrication. Special Process Modules for MEMS. Principle of Sensing and Actuation
Micro-Electro-Mechanical Systems (MEMS) Fabrication Fabrication Considerations Stress-Strain, Thin-film Stress, Stiction Special Process Modules for MEMS Bonding, Cavity Sealing, Deep RIE, Spatial forming
More informationEE40 Lec 22. IC Fabrication Technology. Prof. Nathan Cheung 11/19/2009
Suggested Reading EE40 Lec 22 IC Fabrication Technology Prof. Nathan Cheung 11/19/2009 300mm Fab Tour http://www-03.ibm.com/technology/manufacturing/technology_tour_300mm_foundry.html Overview of IC Technology
More informationR Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm)
4 Silicon Temperature Sensors 4.1 Introduction The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression Spreading Resistance derives
More informationChallenges of Silicon Carbide MOS Devices
Indo German Winter Academy 2012 Challenges of Silicon Carbide MOS Devices Arjun Bhagoji IIT Madras Tutor: Prof. H. Ryssel 12/17/2012 1 Outline What is Silicon Carbide (SiC)? Why Silicon Carbide? Applications
More informationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 4, AUGUST
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 4, AUGUST 2008 1833 Radiation Effects in MOS Oxides James R. Schwank, Fellow, IEEE, Marty R. Shaneyfelt, Fellow, IEEE, Daniel M. Fleetwood, Fellow, IEEE,
More informationSlow DNA Transport through Nanopores in Hafnium Oxide Membranes
Slow DNA Transport through Nanopores in Hafnium Oxide Membranes Joseph Larkin, Robert Henley, David C. Bell, Tzahi Cohen-Karni, # Jacob K. Rosenstein, and Meni Wanunu * Departments of Physics and Chemistry/Chemical
More informationLecture 4. Oxidation (applies to Si and SiC only) Reading: Chapter 4
Lecture 4 Oxidation (applies to Si and SiC only) Reading: Chapter 4 Introduction discussion: Oxidation: Si (and SiC) Only The ability to grow a high quality thermal oxide has propelled Si into the forefront
More informationHeavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth
Journal of ELECTRONIC MATERIALS, Vol. 39, No. 1, 2010 DOI: 10.1007/s11664-009-0953-6 Ó 2009 TMS Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-type 4H-SiC Produced by Low-Temperature
More informationKerf! Microns. Driving Forces Impact of kerf is substantial in terms of silicon usage 50 % of total thickness for 100 mm wafers
2nd. Annual c-si PVMC Workshop at Intersolar NA, San Francisco, CA, July 2013 1 Microns Kerf! Driving Forces Impact of kerf is substantial in terms of silicon usage 50 % of total thickness for 100 mm wafers
More informationThermal Annealing Effects on the Thermoelectric and Optical Properties of SiO 2 /SiO 2 +Au Multilayer Thin Films
American Journal of Materials Science 2015, 5(3A): 31-35 DOI: 10.5923/s.materials.201502.05 Thermal Annealing Effects on the Thermoelectric and Optical Properties of SiO 2 /SiO 2 +Au Multilayer Thin Films
More informationPlasma and Beam Equipment for Materials Processing (Education and Science)
Tomsk Polytechnic University (TPU) Physics and Technology Institute (PTI) Plasma and Beam Equipment for Materials Processing (Education and Science) Prof. Valery Krivobokov Russia, Siberia and Tomsk Moscow
More information1 INTRODUCTION 2 EXPERIMENTATION
COMPARISON OF POCL 3 & BBR 3 FURNACE DIFFUSSION DOPANT SOURCES TO PHOSPHORUS & BORON IMPLANT AND PLASMA DOPANT SOURCES FOR SELECTIVE EMITTER FORMATION USING LOCALIZED LASER MELT (LLM) ANNEALING EITHER
More informationMater. Res. Soc. Symp. Proc. Vol Materials Research Society
Mater. Res. Soc. Symp. Proc. Vol. 940 2006 Materials Research Society 0940-P13-12 A Novel Fabrication Technique for Developing Metal Nanodroplet Arrays Christopher Edgar, Chad Johns, and M. Saif Islam
More informationAtomic Layer Deposition(ALD)
Atomic Layer Deposition(ALD) AlO x for diffusion barriers OLED displays http://en.wikipedia.org/wiki/atomic_layer_deposition#/media/file:ald_schematics.jpg Lam s market-leading ALTUS systems combine CVD
More informationMetallization deposition and etching. Material mainly taken from Campbell, UCCS
Metallization deposition and etching Material mainly taken from Campbell, UCCS Application Metallization is back-end processing Metals used are aluminum and copper Mainly involves deposition and etching,
More informationSection 4: Thermal Oxidation. Jaeger Chapter 3
Section 4: Thermal Oxidation Jaeger Chapter 3 Properties of O Thermal O is amorphous. Weight Density =.0 gm/cm 3 Molecular Density =.3E molecules/cm 3 O Crystalline O [Quartz] =.65 gm/cm 3 (1) Excellent
More informationVLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 33 Problems in LOCOS + Trench Isolation and Selective Epitaxy So, we are discussing
More informationSchottky-Barrier-Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers
Schottky-Barrier-Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers Yoshihisa Ohishi 1, Kohei Noguchi 1, Kuniyuki Kakushima 2, Parhat Ahmet 1, Kazuo Tsutsui 2, Nobuyuki Sugii
More informationChapter 5 Epitaxial Growth of Si 1-y C y Alloys
Chapter 5 Epitaxial Growth of Si 1-y C y Alloys 5.1 Introduction Traditionally, the incorporation of substitutional carbon into silicon and silicongermanium alloys during growth is of great interest for
More informationEE-612: Lecture 28: Overview of SOI Technology
EE-612: Lecture 28: Overview of SOI Technology Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2006 NCN www.nanohub.org Lundstrom EE-612 F06 1 outline 1)
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Diffusion of silicon in crystalline germanium Permalink https://escholarship.org/uc/item/76w7n44c Authors Silvestri, H.H.
More informationFormation and in situ dynamics of metallic nanoblisters in Ga + implanted GaN nanowires
INSTITUTE OF PHYSICS PUBLISHING Nanotechnology 16 (2005) 2764 2769 NANOTECHNOLOGY doi:10.1088/0957-4484/16/12/003 Formation and in situ dynamics of metallic nanoblisters in Ga + implanted GaN nanowires
More informationMODEL PicoMill TEM specimen preparation system. Achieve ultimate specimen quality free from amorphous and implanted layers
MODEL 1080 PicoMill TEM specimen preparation system Combines an ultra-low energy, inert gas ion source, and a scanning electron column with multiple detectors to yield optimal TEM specimens. POST-FIB PROCESSING
More informationImplant-cleave process enables ultra-thin wafers without kerf loss
Implant-cleave process enables ultra-thin wafers without kerf loss Close Alessandro Fujisaka, Sien Kang, Lu Tian, Yi-Lei Chow, Anton Belyaev, Silicon Genesis Corporation, San Jose CA USA The recent shortage
More informationPlasma-Enhanced Chemical Vapor Deposition
Plasma-Enhanced Chemical Vapor Deposition Steven Glenn July 8, 2009 Thin Films Lab 4 ABSTRACT The objective of this lab was to explore lab and the Applied Materials P5000 from a different point of view.
More informationBlisters formation mechanism during High Dose Implanted Resist Stripping
Blisters formation mechanism during High Dose Implanted Resist Stripping Marion Croisy a,b,c*, Cécile Jenny a, Claire Richard a, Denis Guiheux a, Sylvain Joblot a, Alain Campo b, Erwine Pargon c, Nicolas
More informationUTILIZATION OF ATMOSPHERIC PLASMA SURFACE PREPARATION TO IMPROVE COPPER PLATING PROCESSES.
SESSION 14 MATERIALS AND PROCESSES FOR ADVANCED PACKAGING UTILIZATION OF ATMOSPHERIC PLASMA SURFACE PREPARATION TO IMPROVE COPPER PLATING PROCESSES. Eric Schulte 1, Gilbert Lecarpentier 2 SETNA Corporation
More informationEffect of Microwave Annealing on Low Energy ion implanted wafer. Zhao Zhao
Effect of Microwave Annealing on Low Energy ion implanted wafer by Zhao Zhao A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved July 2013 by the Graduate
More informationSilicon Wafer Processing PAKAGING AND TEST
Silicon Wafer Processing PAKAGING AND TEST Parametrical test using test structures regularly distributed in the wafer Wafer die test marking defective dies dies separation die fixing (not marked as defective)
More informationSIMS AND TEM ANALYSIS OF NIOBIUM BICRYSTALS
SIMS AND TEM ANALYSIS OF NIOBIUM BICRYSTALS P. Maheshwari a,c, C. Zhou a, F. A. Stevie a,, G. R. Myneni b, J. Spradlin b, G. Ciovati b, J. M. Rigsbee c, A. D. Batchelor a,c, and D. P. Griffis a,c a Analytical
More information8. Epitaxy. - Extended single-crystal film formation on top of a crystalline substrate
8. Epitaxy 1. Introduction επι(epi placed or resting upon) ταξιζ(taxis arrangement) - Extended single-crystal film formation on top of a crystalline substrate - Homoepitaxy : Film and substrate are the
More informationTEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE W.L. Sarney 1, L. Salamanca-Riba 1, V. Ramachandran 2, R.M Feenstra 2, D.W. Greve 3 1 Dept. of Materials & Nuclear Engineering,
More informationDiffusion in Solids. Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases?
Diffusion in Solids ISSUES TO ADDRESS... How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases? How does diffusion depend
More informationA Survey of Laser Types. Gas Lasers
Mihail Pivtoraiko Andrei Rozhkov Applied Optics Winter 2003 A Survey of Laser Types Laser technology is available to us since 1960 s, and since then has been quite well developed. Currently, there is a
More informationAdditive Element Effects on Electronic Conductivity of Zirconium Oxide Film
Journal of NUCLEAR SCIENCE and TECHNOLOGY, 31[6], pp. 546~551 (June 1994). Additive Element Effects on Electronic Conductivity of Zirconium Oxide Film Yusuke ISOBE, Motomasa FUSE and Kinya KOBAYASHI Energy
More informationEvaluation of Ultrasonic Attenuation and Estimation of Ultrasonic Grain Noise in Copper
Evaluation of Ultrasonic Attenuation and Estimation of Ultrasonic Grain Noise in Copper T. Stepinski and P. Wu Uppsala University, Signals & Systems, SE 751 0, Uppsala, Sweden Abstract. This paper presents
More informationSubstrate surface effect on the structure of cubic BN thin films from synchrotron-based X-ray diffraction and reflection
Substrate surface effect on the structure of cubic BN thin films from synchrotron-based X-ray diffraction and reflection X.M. Zhang, W. Wen, X.L.Li, X.T. Zhou published on Dec 2012 PHYS 570 Instructor
More informationDissolution of electroless Ni metallization by lead-free solder alloys
Journal of Alloys and Compounds 388 (2005) 75 82 Dissolution of electroless Ni metallization by lead-free solder alloys Ahmed Sharif, Y.C. Chan, M.N. Islam, M.J. Rizvi Department of Electronic Engineering,
More informationa) The self-diffusion coefficient of a metal with cubic structure can be expressed as
EXERCISES KJM5120 Chapter 5; Diffusion 1. Random (self) diffusion a) The self-diffusion coefficient of a metal with cubic structure can be expressed as 1 n D = s 6 t 2 where n/t represents the jump frequency
More informationThermochromic halide perovskite solar cells
SUPPLEMENTARY INFORMATION Articles https://doi.org/10.1038/s41563-017-0006-0 In the format provided by the authors and unedited. Thermochromic halide perovskite solar cells Jia Lin 1,2,3, Minliang Lai
More informationFabrication Techniques for Thin-Film Silicon Layer Transfer
Fabrication Techniques for Thin-Film Silicon Layer Transfer S. L. Holl a, C. A. Colinge b, S. Song b, R. Varasala b, K. Hobart c, F. Kub c a Department of Mechanical Engineering, b Department of Electrical
More informationOxygen defects created in CeO 2 irradiated with 200 MeV Au ions
Oxygen defects created in CeO 2 irradiated with 200 MeV Au ions K. Ohhara 1, 2, N. Ishikawa 1, S. Sakai 1, Y. Matsumoto 1, O. Michikami 3, and Y. Ohta 3 1 Japan Atomic Energy Agency (JAEA), 2-4 Shirane
More information3.155J / 6.152J Micro/Nano Processing Technology TAKE-HOME QUIZ FALL TERM 2005
3.155J / 6.152J Micro/Nano Processing Technology TAKE-HOME QUIZ FALL TERM 2005 1) This is an open book, take-home quiz. You are not to consult with other class members or anyone else. You may discuss the
More information