High Purity and High Mobility Semiconductors 14
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1 High Purity and High Mobility Semiconductors 14 Editors: E. Simoen R. Falster O. Kononchuk O. Nakatsuka C. Claeys Sponsoring Divisions: Electronics and Photonics Dielectric Science & Technology Published by The Electrochemical Society 65 South Main Street, Building D Pennington, NJ , USA tel fax Vol. 75, No. 4 TM
2 Copyright 2016 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey , USA Telephone Fax Web: ISSN (online) ISSN (print) ISSN (cd-rom) ISBN (CD-ROM) ISBN (PDF) Printed in the United States of America.
3 ECS Transactions, Volume 75, Issue 4 High Purity and High Mobility Semiconductors 14 Table of Contents Preface iii Chapter 1 Analytical Techniques Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy E. Simoen, S. K. Dhayalan, A. Y. Hikavyy, R. Loo, E. Rosseel, H. Vrielinck, J. Lauwaert (Invited) Non-Visual Defect Monitoring with Surface Photovoltage Mapping A. D. Findlay, D. Marinskiy, P. Edelman, M. Wilson, A. Savtchouk, C. Almeida, J. Lagowski (Invited) Characterization of Interface Defects by the Charge Pumping Technique T. Tsuchiya (Invited) DLTS Studies of Defects in n-gan Y. Tokuda Chapter 2 Oxygen in Silicon (Invited) Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers D. Kot, G. Kissinger, M. A. Schubert, A. Sattler Practical Evaluation Method of Oxygen Precipitation in the Czochralski Silicon A. J. Lee, S. Hong, J. Y. Kim, H. B. Kang, S. W. Lee v
4 Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon J. W. Shin, W. S. Lee, J. Y. Kim, A. J. Lee, H. B. Kang, S. W. Lee Investigation of the Composition of the Si/SiO2 Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS G. Kissinger, M. A. Schubert, D. Kot, T. Grabolla Depth Profile Analysis of Metals Gettered By Bulk Micro-Defects (BMDs) in Silicon Substrates K. Saga, R. Ohno Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with the Enhanced Gettering Ability J. H. An, J. S. Kim, A. J. Lee, H. K. Park, H. I. Park, B. S. Moon, S. H. Lee, J. G. Park Chapter 3 Ab initio Modeling and TCAD (Invited) Application of DFT Calculation for the Development of High Quality Si and Ge Substrates: From Ultra Large Diameter Crystal Pulling to Metal Gettering K. Sueoka (Invited) Multiscale Modeling of Stress-Mediated Compositional Patterning in SiGe Substrates D. Kaiser, S. Ghosh, S. Han, T. Sinno (Invited) Modeling Extended Defects in Semiconductor Devices V. Moroz, H. Y. Wong, M. Choi Chapter 4 From Substrates to Nanowires (Invited) Defect Evolution during Silicon Smartcut F. Rieutord, S. Tardif, F. Mazen, D. Landru, O. Kononchuk 155 vi
5 Nano Crystals to Micro Crystals: Organolead Triiodide Perovskite Crystal Growth from Isopropanol Solution M. B. Johansson, T. Edvinsson, S. Bitter, A. I. K. Eriksson, E. M. J. Johansson, M. Göthelid, G. Boschloo (Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects M. Fanciulli, S. Paleari, M. Belli, A. Lamperti Chapter 5 High Mobility Group IV Materials and Devices (Invited) Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering K. Sawano, X. Xu, S. Konoshima, N. Shitara, T. Ohno, T. Maruizumi High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn) J. O. Borland Low Temperature Effect on Strained and Relaxed Ge pfinfets STI Last Processes A. V. D. Oliveira, E. Simoen, P. G. D. Agopian, J. A. Martino, J. Mitard, L. Witters, R. Langer, N. Collaert, A. Thean, C. Claeys (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping J. Luo, J. Liu, E. Simoen, G. Wang, S. Mao, H. H. Radamson, N. Duan, J. Li, W. Wang, D. Chen, C. Zhao, T. Ye (Invited) Significant Reduction of Leakage Currents in Reverse-Biased Ge n + /p Junctions by Taking Care of Peripheral Passivation Layer C. Liu, H. Ikegaya, T. Nishimura, A. Toriumi Chapter 6 Poster Session Building III-V Devices onto Large Si Wafers X. Y. Bao, Z. Ye, D. Carlson, E. Sanchez 239 vii
6 Density Functional Theory Study on Frenkel Pair Formation from Oxygen Clusters in Si Crystal H. Fukuda, K. Sueoka 247 Author Index 253 viii
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