Chapter 5 Thermal Processes

Transcription

1 Chapter 5 Thermal Processes 1

2 Topics Introduction Hardware Oxidation Diffusion Annealing Post-Implantation Alloying Reflow High Temp CVD Epi Poly Silicon Nitride RTP RTA RTP Future Trends 2

3 Definition Thermal processes are the processes operate at high temperature, which is usually higher than melting point of aluminum. They are performed in the front-end of the semiconductor process, usually in high temperature furnace commonly called diffusion furnace. 3

4 Thermal Processes in IC Fabrication Materials IC Fab Metallization CMP Dielectric Thin Film Test Wafers Masks Thermal Processes Implant PR strip Etch PR strip Packaging Photolithography Final Test Design 4

5 Horizontal Furnace Commonly used tool for thermal processes Often be called as diffusion furnace Quartz tube inside a ceramic liner called muffle Multi-tube system 5

6 Source Cabinet Source Gases Oxygen Water Vapor Nitrogen Hydrogen Gas control panel Gas flow controller Gas flow meter 6

7 Oxidation Sources Dry Oxygen Water vapor sources Bubblers Flash systems Hydrogen and oxygen, H 2 + O 2 H 2 O Chlorine sources, for minimized mobile ions in gate oxidation Anhydrous hydrogen chloride HCl Trichloroethylene (TCE), Trichloroethane (TCA) 7

8 P-type dopant B 2 H 6 N-type dopants PH 3 AsH 3 Purge gas N 2 Diffusion Sources 8

9 Deposition Sources Silicon source for poly and nitride deposition: Silane, SiH 4 DCS, SiH 2 Cl 2 Nitrogen source for nitride deposition: NH 3 Dopants for polysilicon deposition B 2 H 6, PH 3 and AsH 3 Purge gas N 2 9

10 Horizontal Furnace Heating Coils Wafers Quartz Tube Gas flow Temperature Center Zone Flat Zone Distance 10

11 Vertical Furnace, Process Position Process Chamber Wafers Heaters Suscepter Tower Place the process tube in vertical direction Smaller footprint Better contamination control Better wafer handling Lower maintenance cost and higher uptime 11

12 Temperature Control Thermal processes are very sensitive to the temperature Precisely temperature control is vital ±0.5 C at central zone ±0.05% at 1000 C! 12

13 Ramping Temperature Control Anti-Warp Methods Load wafer slowly at a lower temperature (idle temperature, ~ 800 C) Ramp temperature to process point after a short stabilization period Slow loading 1 inch/min thermal capacity of 200 six-inch wafers can drop temperature as much as 50 C 13

14 Oxidation Silicon reacts with oxygen Stable oxide compound Widely used in IC manufacturing Si + O 2 SiO 2 14

15 Oxidation Original Silicon Surface O 2 Silicon Dioxide Silicon O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 O 2 55% 45% 15

16 Application of Oxidation Diffusion Masking Layer Surface Passivation Screen oxide, pad oxide, barrier oxide Isolation Field oxide and LOCOS Gate oxide 16

17 Diffusion Barrier Much lower B and P diffusion rates in SiO 2 than that in Si SiO 2 can be used as diffusion mask Dopant SiO 2 SiO 2 Si 17

18 Surface Passivation Pad Oxide Sacrificial Oxide Screen Oxide Barrier Oxide SiO 2 Si Normally thin oxide layer (~150Å) to protect silicon defects from contamination and over-stress. 18

19 Screen Oxide Dopant Ions Photoresist Photoresist Si Substrate Screen Oxide 19

20 Pad and Barrier Oxides in STI Process Nitride Pad Oxide Silicon Trench Etch Nitride Pad Oxide USG Silicon Barrier Oxide USG Trench Fill Silicon USG CMP; USG Anneal; Nitride and Pad Oxide Strip 20

21 Pad Oxide Relieve strong tensile stress of the nitride Prevent stress induced silicon defects Silicon nitride Pad Oxide Silicon Substrate 21

22 LOCOS Process Pad Oxide Silicon nitride P-type substrate Pad oxidation, nitride deposition and patterning Silicon nitride SiO 2 p + P-type substrate p + Isolation Doping p + LOCOS oxidation Bird s Beak SiO 2 p + P-type substrate p + Isolation Doping p + Nitride and pad oxide strip 22

23 Sacrificial Oxide Defects removal from silicon surface STI STI STI Sacrificial Oxide P-Well P-Well Gate Oxide P-Well USG N-Well Sacrificial Oxidation USG N-Well Strip Sacrificial Oxide USG N-Well Gate Oxidation 23

24 Device Dielectric Gate oxide: thinnest and most critical layer Capacitor dielectric V G V D > 0 Poly Si Gate Thin oxide n + Source p-si n + Drain Electrons Si Substrate 24

25 Oxide and Applications Name of the Oxide Thickness Application Time in application Native Å undesirable - Screen ~ 200 Å Implantation Mid-70s to present Masking ~ 5000 Å Diffusion 1960s to mid-1970s Field and LOCOS Å Isolation 1960s to 1990s Pad Å Nitride stress buffer 1960s to present Sacrificial <1000 Å Defect removal 1970s to present Gate Å Gate dielectric 1960s to present Barrier Å STI 1980s to present 25

26 Oxidation Mechanism Si + O 2 SiO 2 Oxygen comes from gas Silicon comes from substrate Oxygen diffuse cross existing silicon dioxide layer and react with silicon The thicker of the film, the lower of the growth rate 26

27 Oxide Growth Rate Regime Oxide Thickness Linear Growth Regime B X = t A Diffusion-limited Regime X = B t Oxidation Time 27

28 <100> Silicon Dry Oxidation Oxide Thickness (micron) <100> Silicon Dry Oxidation 1200 C 1150 C 1100 C 1050 C 1000 C 950 C 900 C Oxidation Time (hours) 28

29 Wet (Steam) Oxidation Si + 2H 2 O SiO 2 + 2H 2 At high temperature H 2 O is dissociated to H and H-O H-O diffuses faster in SiO 2 than O 2 Wet oxidation has higher growth rate than dry oxidation. 29

30 <100> Silicon Wet Oxidation Rate Oxide Thickness (micron) <100> Silicon Wet Oxidation 1150 C 1100 C 1050 C 1000 C 950 C 900 C Oxidation Time (hours) 30

31 Oxidation Rate Temperature Chemistry, wet or dry oxidation Thickness Pressure Wafer orientation (<100> vs. <111>) Silicon dopant 31

32 Wet Oxidation Rate Oxide Thickness (micron) <111> Orientation 95 C Water 1200 C 1100 C 1000 C 920 C Oxidation Time (hours) 32

33 Depletion and Pile-up Effects Original Si Surface Si-SiO 2 interface Original Si Surface Si-SiO 2 interface Dopant Concentration SiO 2 Original Distribution Si Dopant Concentration SiO 2 Si P-type Dopant Depletion N-type dopant Pile-up 33

34 Oxidation Rate Doped oxidation (HCl) HCl is used to reduce mobile ion contamination. Widely used for gate oxidation process. Growth rate can increase from 1 to 5 percent. 34

35 Oxidation Process Dry Oxidation, thin oxide Gate oxide Pad oxide, screen oxide, sacrificial oxide, etc. Wet Oxidation, thick oxide Field oxide Diffusion masking oxide 35

36 Dry Oxidation System MFC MFC MFC To Process Tube MFC Control Valves HCl Process N 2 O 2 Purge N 2 Regulator 36

37 Dry Oxidation Dry O 2 as the main process gas HCl is used to remove mobile ions for gate oxidation High purity N 2 as process purge gas Lower grade N 2 as idle purge gas 37

38 Dangling Bonds and Interface Charge Interface State Charge (Positive) Dangling Bond SiO 2 Si-SiO 2 Interface Si 38

39 Wet Oxidation Process Faster, higher throughput Thick oxide, such as LOCOS Dry oxide has better quality Process Temperature Film Thickness Oxidation Time Dry oxidation 1000 C 1000 Å ~ 2 hours Wet oxidation 1000 C 1000 Å ~ 12 minutes 39

40 Water Vapor Sources Boiler Bubbler Flush Pyrogenic 40

41 Boiler System Heated Gas line Heated Fore line MFC Process Tube Exhaust Vapor Bubbles Water Heater 41

42 Bubbler System N 2 Water MFC N 2 + H 2 O Heated Gas Line Process Tube N 2 Bubbles Exhaust Heater 42

43 Flush System Hot Plate Water N 2 MFC Process Tube Heater 43

44 Pyrogenic Steam System Hydrogen Flame, 2 H 2 + O 2 2 H 2 O O 2 H 2 To Exhaust Thermal Couple Process Tube Paddle Wafer Boat 44

45 Rapid Thermal Oxidation For gate oxidation of deep sub-micron device Very thin oxide film, < 30 Å Need very good control of temperature uniformity, WIW and WTW. RTO will be used to achieve the device requirement. 45

46 High Pressure Oxidation Faster growth rate Reducing oxidation temperature: 1 amt. = 30 C Higher dielectric strength Complex system Safety issues Not widely used in IC production Stainless Steel Jacket High Pressure Inert Gas High Pressure Oxidant Gas Quartz Process Chamber 46

47 High Pressure Oxidation Oxidation time to grow 10,000 Å wet oxide Temperature Pressure Time 1 atmosphere 5 hours 1000 C 5 atmosphere 1 hour 25 atmosphere 12 minutes Time Pressure Temperature 1 atmosphere 1000 C 5 hours 10 atmosphere 700 C 47

48 Oxide Measurement Thickness Uniformity Color chart Ellipsometry Reflectometry Gate oxide Break down voltage C-V characteristics 48

49 Ellipsometry Linearly Polarized Incident Light Elliptically Polarized Reflected Light s p n 1, k 1, t 1 n 2, k 2 49

50 Reflectometry Incident light 1 2 Human eye or photodetector t Dielectric film, n(λ) Substrate 50

51 C-V Test Configuration Large Resistor Capacitor Meter Oxide Aluminum Silicon Metal Platform Heater Heater 51

52 Diffusion Most common physics phenomena Materials disperse from higher concentration to lower concentration region Silicon dioxide as diffusion mask Was widely used for semiconductor doping Diffusion Furnace and Diffusion Bay 52

53 Illustration of Diffusion Doping Dopant Junction Depth Silicon 53

54 Definition of Junction depth Junction Depth, x j Background dopant concentration Dopant Concentration Distance from the wafer surface 54

55 Diffusion Masking Oxide Masking Oxide N-Silicon p + p + N-Silicon 55

56 Diffusion Replaced by ion implantation due to the less process control Still being used in drive-in for well formation 56

57 Thermal Budget Dopant atoms diffuse fast at high temperature D = D 0 exp ( E A /kt) Smaller device geometry, less room for dopant thermal diffusion, less thermal budget Thermal budget determines the time and temperature of the post-implantation thermal processes 57

58 Illustration of Thermal Budget Gate As S/D Implantation Over Thermal Budget 58

59 Thermal Budget T ( C) 1 µm 0.5 µm µm Thermal Budget (sec) µm Source: Chang and Sze, ULSI Technology /T (K) 59

60 Diffusion Doping Process Both dopant concentration and junction depth are related to temperature. Isotropic dopant profile Replaced by ion implantation after the mid-1970s. 60

61 Diffusion Doping Process Silicon dioxide as hard mask Deposit dopant oxide Cap oxidation prevent dopant diffusion into gas phase Drive-in 61

62 Diffusion Doping Process Oxidation, photolithography and oxide etch Pre-deposition: B 2 H O 2 B 2 O H 2 O Cap oxidation: 2 B 2 O Si 3 SiO B 2 H 2 O + Si SiO H 2 Drive-in Boron diffuses into silicon substrate 62

63 Diffusion Doping Process Oxidation, photolithography and oxide etch Deposit dopant oxide: 4POCl 3 + 3O 2 2P 2 O 5 + 3Cl 2 Cap oxidation 2P 2 O 5 + 5Si 5SiO 2 + 4P Phosphorus concentrates on silicon surface Drive-in Phosphorus diffuses into silicon substrate 63

64 Dopant Oxide Deposition Deposited Dopant Oxide SiO 2 Si Substrate 64

65 Limitations and Applications Diffusion is isotropic process and always dope underneath masking oxide Can t independently control junction depth and dopant concentration Used for well implantation drive-in R&D for ultra shallow junction (USJ) formation 65

66 Diffusion for Boron USJ Formation Small devices needs ultra shallow junction Boron is small and light, implanter energy could be too high for it goes too deep Controlled thermal diffusion is used in R&D for shallow junction formation 66

67 Four-Point Probe Measurement I V R s = ρ/t P 1 P 2 P 3 P 4 S 1 S 2 S 3 Doped Region Substrate 67

68 Annealing and RTP Processes 68

69 Post-implantation Annealing Energetic ions damage crystal structure Amorphous silicon has high resistivity Need external energy such as heat for atoms to recover single crystal structure Only in single crystal structure dopants can be activated Higher temperature, faster annealing 69

70 After Ion Implantation Lattice Atoms Dopant Atom 70

71 Thermal Annealing Lattice Atoms Dopant Atoms 71

72 Alloy Annealing A thermal process in which different atoms chemically bond with each other to form a metal alloy. Widely used in silicide formation Self aligned silicide (salicide) TiSi 2 CoSi 2 Furnace and RTP 72

73 Silicide Much lower resistivity than polysilicon Used as gate and local interconnection Used as capacitor electrodes Improving device speed and reduce heat generation TiSi 2, WSi 2 are the most commonly used silicide CoSi 2, MoSi 2, and etc are also used 73

74 Titanium Silicide Process Titanium Polysilicon n + n + STI USG p + p + Ti Deposition Titanium Silicide STI n + n + USG p + p + Annealing Sidewall Spacer Titanium Silicide STI n + n + USG p + p + Ti Strip 74

75 Aluminum-silicon Alloy Form on silicon surface Prevent junction spiking due to silicon dissolving in aluminum Junction Spike Al SiO 2 Al Al p + p + n-type Silicon 75

76 Illustration of BPSG Reflow As Deposit p + PSG n + n + LOCOS SiO 2 p + p + p + P-type substrate N-well After Reflow p + PSG n + n + LOCOS SiO 2 p + p + p + P-type substrate N-well 76

77 Rapid Thermal Processing (RTP) Mainly used for post-implantation rapid thermal anneal (RTA) process. Fast temperature ramp-up, 100 to 150 C/sec compare with 15 C/min in horizontal furnace. Reduce thermal budge and easier process control. 77

78 Rapid Thermal Processing (RTP) Single wafer rapid thermal CVD (RTCVD) chamber can be used to deposit polysilicon and silicon nitride. RTCVD chamber can be integrated with other process chamber in a cluster tool for in-line process. Thin oxide layer (< 40 Å) is likely to be grown with RTO for WTW uniformity control. 78

79 Schematic of RTP Chamber Wafer External Chamber Process Gases Quartz Chamber Tungsten-Halogen Lamp IR Pyrometer 79

80 Lamp Array Bottom Lamps Top Lamps Wafer 80

81 RTP Chamber Photo courtesy of Applied Materials, Inc 81

82 Annealing and Dopant Diffusion At higher temperature >1100 C anneal is faster than diffusion Post implantation prefer high temperature and high temperature ramp rate. Furnace has low temperature ramp rate (~10 C/min) lead to large thermal capacity Furnace annealing is a long process which causes more dopant diffusion Anneal Rate Diffusion Rate Temperature 82

83 Dopant Diffusion After Anneal Gate RTA Furnace anneal 83

84 Advantage of RTP over Furnace Much faster ramp rate (75 to 150 C/sec) Higher temperature (up to 1200 C) Faster process Minimize the dopant diffusion Better control of thermal budget Better wafer to wafer uniformity control Load wafer Ramp up Anneal Cool down Unload wafer Temperature N 2 Flow Time 84

85 Temperature of RTP & Furnace Temperature RTP Furnace Room Temp. Time 85

86 Cluster Tool RTO/RTP RTCVD α-si HF Vapor Clean Transfer Chamber Cool down Loading Station Unloading Station 86