Cristaux 3D. Fabriquer de tels objets aux longueur d'ondes optiques???
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1 Cristaux 3D Fabriquer de tels objets aux longueur d'ondes optiques???
2 A la main, une sphère l'une après l'autre... 5μm 5μm dissolve latex spheres 4-layer [111] silica diamond lattice 6-layer [001] silica diamond lattice F. Garcia-Santamaria et al., Adv. Mater. 14 (16), 1144 (2002)
3 Moins désespéré : C Up to ~ 27% gap for Si/air diamond-like: rods ~ bonds rod layer B A hole layer S. G. Johnson et al., Appl. Phys. Lett. 77, 3490 (2000)
4 Making Rods & Holes Simultaneously side view substrate Si top view
5 Making Rods & Holes Simultaneously expose/etch holes substrate A A A A A A A A A
6 Making Rods & Holes Simultaneously backfill with silica (SiO 2 ) & polish substrate A A A A A A A A A
7 Making Rods & Holes Simultaneously deposit another Si layer layer 1 substrate A A A A A A A A A
8 Making Rods & Holes Simultaneously dig more holes offset & overlapping layer 1 B B B B substrate B B B B B B B A A A B B B B B B B A A A B B B B B B B A A A
9 Making Rods & Holes Simultaneously backfill layer 1 B B B B substrate B B B B B B B A A A B B B B B B B A A A B B B B B B B A A A
10 Making Rods & Holes Simultaneously etc... and dissolve silica when done layer 1 layer 2 substrate layer 3 C C C C B B B B one period C B C B C B C B C A B C A B C A B C C B C B C B C B C A B C A B C A B C C A B C A B C A B C A B C B C B C B C A A A
11 Making Rods & Holes Simultaneously etc... hole layers layer 1 layer 2 substrate layer 3 C C C C B B B B one perio d C B C B C B C B C A B C A B C A B C C B C B C B C B C A B C A B C A B C C A B C A B C A B C A B C B C B C B C A A A
12 Making Rods & Holes Simultaneously etc... rod layers layer 1 layer 2 substrate layer 3 C C C C B B B B one perio d C B C B C B C B C A B C A B C A B C C B C B C B C B C A B C A B C A B C C A B C A B C A B C A B C B C B C B C A A A
13 M. Qi, H. Smith, MIT A More Realistic Schematic
14 e-beam Fabrication: Top View 5 μm M. Qi, H. Smith, MIT
15 M. Qi, H. Smith, MIT e-beam Fabrication: Side Views
16 Adding Defect Microcavities 740nm 450nm C C C C B' B B layer 3 B B 2 layer 1 layer n m layer 7 6 substrate Easiest defect: don t etch some B holes non-periodically distributed: suppresses sub-band structure low Q = easier to detect from planewave M. Qi, H. Smith, MIT
17 Structure tas de bois (Woodpile structure) Up to ~ 17% gap for Si/air diamond-like bonds K. Ho et al., Solid State Comm. 89, 413 (1994) H. S. Sözüer et al., J. Mod. Opt. 41, 231 (1994)
18 1.25 Periods of Woodpile (4 log layers = 1 period) Si gap S. Y. Lin et al., Nature 394, 251 (1998)
19 1.25 Periods of 1.55μm (4 log layers = 1 period) Si gap 180nm 1.3μm S. Y. Lin et al., Nature 394, 251 (1998)
20 Woodpile by Wafer Fusion 2nd substrate + logs, rotated 90 and flipped substrate + first log layer S. Noda et al., Science 289, 604 (2000)
21 Woodpile by Wafer Fusion fuse wafers together substrate + first log layer S. Noda et al., Science 289, 604 (2000)
22 Woodpile by Wafer Fusion dissolve upper substrate substrate + first log layer S. Noda et al., Science 289, 604 (2000)
23 Woodpile by Wafer Fusion double, double, toil and trouble S. Noda et al., Science 289, 604 (2000)
24 S. Noda et al., Science 289, 604 (2000) Woodpile by Wafer Fusion
25 S. Noda et al., Science 289, 604 (2000) Woodpile Gap from μm
26 S. Noda et al., Science 289, 604 (2000) Finally, a Defect!
27 Stacking by Micromanipulation microsphere into hole break off suspended layer lift up and move to substrate tap down holes onto spheres spheres enforce alignment goto a; K. Aoki et al., Appl. Phys. Lett. 81 (17), 3122 (2002)
28 Stacking by Micromanipulation K. Aoki et al., Appl. Phys. Lett. 81 (17), 3122 (2002)
29 Yes, it works: Gap at ~4μm 20 layers 50nm accuracy: (gap effects are limited by finite lateral size) K. Aoki et al., Nature Materials 2 (2), 117 (2003) 1μm
30 A Metal Photonic Crystal Start with Si woodpile in SiO 2 dissolve Si with KOH fill with Tungsten via chemical vapor deposition (CVD) (on thin TiN layer) dissolve SiO 2 with HF J. G. Fleming et al., Nature 417, 52 (2002)
31 Holographic Lithography Four beams make 3d-periodic interference pattern absorptive material (1.4μm) k-vector differences give reciprocal lattice vectors (i.e. periodicity) D. N. Sharp et al., Opt. Quant. Elec. 34, 3 (2002) & M. Campbell, Nature, 404, 53 (2000)
32 Holographic Lithography beam polarizations + amplitudes (8 parameters) give unit cell D. N. Sharp et al., Opt. Quant. Elec. 34, 3 (2002) & M. Campbell, Nature, 404, 53 (2000)
33 Holographic Lithography 10μm huge volumes, long-range periodic, fcc lattice backfill for high contrast D. N. Sharp et al., Opt. Quant. Elec. 34, 3 (2002) & M. Campbell, Nature, 404, 53 (2000)
34 Holographic Lithography [111] cleavages simulated structure 5μm [111] closeup 1μm titania inverse structure D. N. Sharp et al., Opt. Quant. Elec. 34, 3 (2002) & M. Campbell, Nature, 404, 53 (2000)
35 Colloids (opals) (evaporate) silica (SiO 2 ) microspheres (diameter < 1μm) sediment by gravity into close-packed fcc lattice!
36 Colloids (opals)
37 Inverse opals fcc solid spheres do not have a gap but fcc spherical holes in Si do have a gap 3D sub-micron colloidal spheres Infiltration Template (synthetic opal) complete band gap Remove Template Inverted Opal ~ 10% gap between 8th & 9th bands small gap, upper bands: sensitive to disorder
38 A More Perfect Crystal meniscus 65 C 1 micron silica spheres in ethanol evaporate solvent 80 C Convective Assembly Heat Source Capillary forces during drying cause assembly in the meniscus Extremely flat, large-area opals of controllable thickness Nagayama, Velev, et al., Nature (1993) & Colvin et al., Chem. Mater. (1999)
39 A More Perfect Crystal
40 Inverse-Opal Photonic Crystal Y. A. Vlasov et al., Nature 414, 289 (2001)
41 Inverse-Opal Band Gap good agreement between theory (black) & experiment (red/blue) Y. A. Vlasov et al., Nature 414, 289 (2001)
42 Inserting Defects in Inverse Opals e.g., Waveguides Three-photon lithography with laser scanning confocal microscope (LSCM) Wonmok, Adv. Materials 14, 271 (2002)
43 GLAD = GLancing Angle Deposition 15% gap for Si/air diamond-like with broken bonds doubled unit cell, so gap between 4th & 5th bands O. Toader and S. John, Science 292, 1133 (2001)
44 GLAD = GLancing Angle Deposition seed posts glancing-angle Si only builds up on protrusions evaporated Si rotate to spiral Si S. R. Kennedy et al., Nano Letters 2, 59 (2002)
45 GLAD = GLancing Angle Deposition S. R. Kennedy et al., Nano Letters 2, 59 (2002)
46 Auto-cloning start with an old layer-by-layer modify layering slightly (14% gap for Si/SiO 2 /air) (don t forget the holes) S. Fan et al., Appl. Phys. Lett. 65, 1466 (1994) S. Kawakami et al., Appl. Phys. Lett. 74, 463 (1999)
47 Competition between 3 processes clones shape of substrate Auto-cloning neutral atoms ions diffuse deposition leaves trenches (shadows) bias sputtering cuts corners (prefers 60 ) re-deposition fills trenches so, only planar patterning is in substrate only drilling needs alignment minimize etch roughness S. Kawakami et al., Appl. Phys. Lett. 74, 463 (1999)
48 Auto-cloning E. Kuramochi et al., Opt. Quantum. Elec. 34, 53 (2002)
49 Yablonovite diamond-like fcc crystal earliest fabrication-amenable alternative to diamond spheres image: (Topology is very similar to 2000 layer-by-layer crystal) E. Yablonovitch, T. M. Gmitter, and K. M. Leung, Phys. Rev. Lett. 67, 2295 (1991)
50 Making Yablonovite e-beam mask + chemically-assisted ion-beam etching GaAs 460nm C. C. Cheng et al., Physica Scripta. T68, 17 (1996)
51 Making ~Yablonovite (II) electrochemical + focused-ion-beam (FIB) etching (deep vertical holes) S i =3.1μm A. Chelnokov et al., Appl. Phys. Lett. 77, 2943 (2000)
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