2008 Summer School on Spin Transfer Torque
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1 2008 Summer School on Spin Transfer Torque Nano-scale device fabrication 2-July-2008 Byoung-Chul Min Center for Spintronics Research Korea Institute of Science and Technology
2 Introduction
3
4 Moore s Law in Action Source: Intel
5 Intel Lithography Roadmap (High-volume manufacturing) Source: Intel
6 Top-Down & Bottom-Up
7 Si devices shrink to Virus size Transistor for 90-nm process Influenza Virus Source: Intel
8 Gate Oxides as thin as Atoms Source: Intel
9 Spin-transfer torque Current-induced magnetization switching Spin-polarized current can induce magnetization switching by spin-transfer torque in nano-scale (< 200 nm) magnetic devices. Switching by magnetic-field Switching by spin-polarized current Sw witching Cu urrent Sw witching Cu urrent Size of the bit Size of the bit
10 Size of STT devices Yuasa et al., Nature materials 3, 868 (2004) Ozatay et al., Nature materials 7, 567 (2008)
11 Spin-Momentum-Transfer (SMT) MRAM S. A. Wolf, IBM J. RES. & DEV. 50, 101 (2006)
12
13 For non-ic applications High cost of semiconductor processing tools Limited process flexibility - No rapid prototyping possible - Not applicable on fragile substrates (mechanical chemical layers) Needs for novel methods Source: Intel
14 Bridging the Gap
15 Contents 1. Materials : - Thin Film Technology 2. Lithography: h - Optical / Interference Lithography - E-beam/Ion-beam Lithography - Scanning Probe Techniques - Soft Lithography 3. Patterning Transfer: - Wet/Dry etching - Lift-off Technology
16 Planar structures Realizing small lateral structures by: 1. (Photo) lithography 2. Direct (local) processes Collection processes and technologies: Lithography Etching (wet; dry and reactive) Oxidation, Diffusion; Ion implantation Deposition Laser structuring
17 Multilevel metallization
18 Thin film technology
19 MTJ stack MTJ Structure TMR vs. magnetic field Capping layer Free layer Tunnel barrier Synthetic Pinned layer Buffer layer Wafer Ru (50A ) Ta (50A ) 250 CoFeB (30A ) 200 MgO (15A ) CoFeB (40A ) 150 Ru (8A ) CoFe (20A ) IrMn (140A ) TMR (%) CoFeB (3.0 nm)/ MgO (1.5nm)/ CoFeB (3.0nm) TMR =204% RA = 43 kωμm 2 NiFe (60A ) Ta (50A ) Ru (300A ) 0 Ta (50A ) Si / SiO 2 H (Oe)
20 Thin film technology A thin film is normally made on a substrate by: PVD, CVD and other technologies.
21 Vacuum evaporation system Substrate with condensing atoms Vacuum Atom transport Evaporation source
22 E-beam evaporation source
23 Sputtering Bombardment by high energy atomic particles (ions) Ejection of atoms of the target by a momentum transfer Deposition i onto the substrate
24 Sputtering System
25 Basic MBE system: Structural control during thin film growth
26 Steps for making thin films 1.emission of particles from source ( heat, high h voltage...) 2. transport of particles to substrate (free vs. directed) 3. condensation of particles on substrate (nucleation and growth) Simple model:
27 From ad atom via nucleation to continuous film
28 Growth process of evaporated Au on Carbon-substrate Carbon substrate with constant deposition rate TEM photographs from Th various The i s stages st s of f growth th
29 Deposition modes Layer-by-layer 3D-Island model S-K model (van der Merwe) (Volmer-Weber) (Stranski-Krastanov)
30 Clusters of Au observed by AFM Au islands/clusters/nuclei
31 Growth Modes and Surface Energies γ f θ 0 0 θ = γ s γ i γ f cos 0 Wetting does not occur, if γ s γ f > γ s γ i γ i Eadh = γ f + γ s γ i Wetting, if No wetting, if E E adh adh 2 γ < 2 γ f f
32 Growth Modes and Surface Energies Wetting, if Eadh 2γ f No wetting, if Eadh < 2γ f
33 Growth Modes and Surface Energies Wetting, if Eadh 2γ f No wetting, if Eadh < 2γ f A buffer layer with a high surface energy Ta, Ru, Hf, W
34 MTJ stack MTJ Structure TMR vs. magnetic field Capping layer Free layer Tunnel barrier Synthetic Pinned layer Buffer layer Wafer Ru (50A ) Ta (50A ) 250 CoFeB (30A ) 200 MgO (15A ) CoFeB (40A ) 150 Ru (8A ) CoFe (20A ) IrMn (140A ) TMR (%) CoFeB (3.0 nm)/ MgO (1.5nm)/ CoFeB (3.0nm) TMR =204% RA = 43 kωμm 2 NiFe (60A ) Ta (50A ) Ru (300A ) 0 Ta (50A ) Si / SiO 2 H (Oe)
35 Indication of the growth of evaporated films as function of T subst Tsubstr.
36 Indication of the growth of evaporated films as function of T subst Tsubstr.
37 Multilayer structure Super lattice/single l crystalline Poly-crystalline Interfaces
38 Multilayer structure Super lattice/single l crystalline Interfaces Yuasa et al., Nature materials 3, 868 (2004)
39 Multilayer structure Super lattice/single l crystalline Poly-crystalline Interfaces
40 MTJ stack MTJ Structure Textured layers Capping layer Free layer Tunnel barrier Synthetic Pinned layer Buffer layer Wafer Ru (50A ) Ta (50A ) CoFeB (30A ) MgO (15A ) CoFeB (40A ) Ru (8A ) CoFe (20A ) IrMn (140A ) NiFe (60A ) Ta (50A ) Ru (300A ) Ta (50A ) Si / SiO 2 Yuasa, J.Phys.D 40,R337 (2007)
41 Contents 1. Materials : - Thin Film Technology 2. Lithography: h - Optical Lithography - E-beam/Ion-beam Lithography - Scanning Probe Techniques - Soft Lithography 3. Patterning Transfer: - Wet/Dry etching - Lift-off Technology
42 Fabrication of nano-scale MTJs photoresist
43 Basic Lithographic hi Process Steps
44 Process flow of lithography Radiation source Illumination control system Resist coated sample Illumination process: The resist is changed by the radiation Development: Selectively etched resist
45 Photoresist Coating
46 Exposure
47 Exposure
48 Projection tool reticle Projection lens system wafer illuminator θ Light Source Lens pupil, defines NA NA N.A. = n sin θ R = k 1 λ NA Source: IMEC
49 Photoresist O N 2 OH CH 2 n SO 2 R CH 3 Sensitizer (DNQ) + Novolac Resin Novolac Resin + converted PAC Exposed Resist Dissolutio on Rate Novolac Resin Resist formulation Novolac Resin + DNQ PAC Exposure Dissolution Selectivity Unexposed resist
50 Photoactive compound Source: Micro chemicals O N 2 hν CO H 2 H 2 O SO R 2 SO R 2 Diazonaphthoquinone sensitizer Indenecarboxylic acid Hydrophobic Hydrophilic
51 Development of resist Source: Micro chemicals
52 Photoresist Source: Micro chemicals
53 Photoresist Contrast PR Oxide High contrast PR Oxide Low contrast
54 Negative resist
55 E-beam/Ion-beam Lithography
56 E-beam lithography Precise control of the energy and dose Imaging of electrons to form a small point < 1 nm No need for a physical mask E ~30 kev Electron scattering in solids R > 10 nm Slow exposure speed Vacuum system High cost PMMA (polmetthylmethacrylate)
57 E-beam lithography 50 nm lines 80 nm lines Organic resist PMMA ~ 7 nm Inorganic resist ~ 1-2 nm Source: TU Delft
58 E-beam lithography 20 nm 30 nm HSQ (1300A) 50X50 nm 2 SiO 2
59 Use of Focused Ion Beam: Direct structuring AFM: Squares with sizes s of nm
60 Contents 1. Materials : - Thin Film Technology 2. Lithography: h - Optical / Interference Lithography - E-beam/Ion-beam Lithography - Scanning Probe Techniques - Soft Lithography 3. Patterning Transfer: - Wet/Dry etching - Lift-off Technology
61 Pattern Transfer
62 Pattern Transfer MTJ film stack Substrate Photoresist Pattern Etching Lift-off
63 Wet/ Dry Etching
64 Etching: Wet and Dry Wet etching Dry etching Isotropic Resolution limited by film thickness Ion beam etching, plasma etching, reactive ion etching (RIE)
65 Different Dry Etching Techniques Sputtering Chemical Isotropic Etching Ion enhanced energetic Vertical Etch Ion enhanced inhibitor
66 Side-wall re-deposition O.Auciello (1981), JVST 19 p841 e (Å/min) Etch Rate P.G. Glöersen (1975), JVST 12 p28 Beam Angle (deg.)
67 Ion Beam Etching Acceleration Grid Contamination 67/5 Beam Beam Acc. Voltage Grid Grid 500 V 0 V -350 V High-energy ion Ar + Ar High-energy neutral e Low-energy Substrate Ar + Low-energy ion Ar neutral Contamination of acceleration grid materials The contamination is proportional to (the acceleration voltage) 2 Optimum acceleration voltage = 15 ~20 % of the beam voltage P R Puckett Ion Beam etching P.R. Puckett, Ion Beam etching in J. L. Vossen and W. Kern ed., Thin film process II, (Academic Press, San Diego, 1991)
68 Trench Tilt Angle MTJ 30 FM Barrier FM 40 R. E. Lee (1979), JVST 16 p164
69 Plasma Dry Etcher
70 Plasma Etching Steps
71 Typical Dry Etch Chemistries
72 Deep Reactive Ion Etching (DRIE) a) Resist patterning b) Etching c) Passivation d) Etching
73 Dry Etching Equipment Dry Etcher Through-wafer etched interconnects Source: STS
74 Lift-off
75 E-beam litho & Lift-off
76 Sub-micron magnetic dots by LIL and lift-off process 1 μm Co dots evaporated through the shadow mask Arrays of holes in photoresist with overhang structure Diameter: 500 nm Thickness: 100 nm 27/41
77 Sub-micron magnetic dots Vortex state Vortex core Vortex core MFM Image of Co dots 500-nm-diameter 100-nm-thick A. Wachowiak (2002), Science 298, p577 T. Shinjo (2000), Science 289, p930 28/41
78 Contents 1. Materials : - Thin Film Technology 2. Lithography: h - Optical Lithography - E-beam/Ion-beam Lithography - Scanning Probe Techniques - Soft Lithography 3. Patterning Transfer: - Wet/Dry etching - Lift-off Technology
79
80
81
82 Emerging Nano-patterning Methods Source: EPFL
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