Arcing prevention by dry clean optimization using plasma parameter monitoring
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1 Arcing prevention by dry clean optimization using plasma parameter monitoring Das diesem Bericht zugrundeliegende Vorhaben wurde mit Mitteln des Sächsischen Staatsministeriums für Wirtschaft und Arbeit (Förderkennzeichen 5706) gefördert. Die Verantwortung für den Inhalt dieser Veröffentlichung liegt beim Autor. Page 1 11 th 12 th of December 2000, - Germany
2 Overview! Shallow Trench Isolation (STI) etch process - Overview! The problem! Experimental Sequence (Overview)! Basic experiments with CF 4 /O 2 Cleans " etchrate vs. O 2 - concentration " electron collision rate vs. O 2 - concentration " clean influence on Conditioning - wafers " basic experiment summary! Experiments on product wafers! Summary! Outlook Page 2 11 th 12 th of December 2000, - Germany
3 STI etch process - Overview a) Starting profile b) Mask-open step c) Trench etch step Resist ARC SiN Si deep trench Resist ARC SiN d) Oxide CVD e) Planarization f) A-B: top-cd Oxide Oxid A SiN SiN Si Si Si Oxide Resist ARC SiN Si bottom-cd Page 3 11 th 12 th of December 2000, - Germany B
4 The problem (motivation)! New DRAM product # new recipe for STI etch necessary! New recipe generates more chamber wall polymers " increased arcing danger " more extensive chamber cleaning! New dry clean for wall polymer reduction used " reduces wall polymers, but " Critcal Dimension (CD) on product wafers effected! # New dry clean recipe needed with: " effective wall polymer reduction (simultaneously reduces arcing danger) " no CD degradation on product wafers Page 4 11 th 12 th of December 2000, - Germany
5 Joined application of impulse detection in the RF stray field and SEERS to fix the arcing problem No arcing during these measurements! Illustration of impulses observed in RF stray field outside the chamber over one wetclean cycle! Very high sensitivity, many impulses, but no arcing observed! Combination of two real time in-situ measurement techniques to solve arcing problem: " Impulse detection in the RF stray field outside the chamber will detect breakdowns of the electromagnetic field caused by micro arcing " Plasma parameters will help to optimize dry clean and detect heavy arcing Page 5 11 th 12 th of December 2000, - Germany
6 Experimental sequence! Determination of suitable O 2 and CF 4 concentration! best dry clean recipe tested on resist wafers! Shorter clean step - test on resist wafers! Dry clean with conditioning step - test on product wafers! Changed conditioning step recipe - test on product wafers! Variation of clean- / conditioning time - test on resist wafers Page 6 11 th 12 th of December 2000, - Germany
7 Basic experiment with CF 4 /O 2 dry cleans (DC) O2 CF4 Gesamt O2 CF4 sccm sccm sscm % % ,3 16, ,4 20, ,0 50, ,0 50, ,7 83,3 Experiment Cond DC 1 Cond DC 3 Cond DC 4 Cond DC 5 Cond DC 2 Etchrate meas. DC 1 DC 3 DC 4 DC 5 DC 2! Test of dry clean recipies by measurement of resist etch rate on test wafers! 5 dry clean (DC) - recipes with varying O 2 /CF 4 - ratios to figure out a working recipe! First part of experiment: run conditioning wafers to recondition chamber before each clean Page 7 11 th 12 th of December 2000, - Germany
8 Dependence of etch rate on O 2 - concentration (resist test wafers) Etchrate vs. O 2 Concentration Etchrate [nm/min] O 2 [Vol%]! Highest etch rates in case of O 2 - concentration being much higher than CF 4 -concentration (dry clean 1 and 2)! Lowest etch rate in case CF 4 dominates (dry clean 5)! Higher etch rate with higher total gas flow (dry clean 3 vs. dry clean 4) 2 1 Page 8 11 th 12 th of December 2000, - Germany
9 Dependence of electron collision rate on O 2 concentration: Bare Si-wafers vs. resist wafers electron collisionrate [s -1 ] 3,50E+07 3,00E+07 2,50E+07 2,00E+07 1,50E+07 1,00E+07 5,00E+06 0,00E+00 Electron collisionrate vs. O 2 concentration [median] O 2 (vol%) DC on Si-Wafer DC etchrate meas.! The higher the O 2 - concentration, the lower the electron collision rate in dry clean - test at etch rate measurment (red curve)! But: there are big differences in electron collision rate depending on type of wafer used " DC on Si- wafer doesn t have such a big influence on plasma as DC on resist wafers, because of less reaction products from wafer surface (blue curve) Page 9 11 th 12 th of December 2000, - Germany
10 Impact of dry clean on chamber conditioning as measured by monitoring electron collision rate Page 10 median collision rate [s -1 ] Dryclean 3,00E+07 2,50E+07 2,00E+07 1,50E+07 1,00E+07 5,00E+06 electron collision rate vs. time [median] 0,00E+00 2,30E+07 14:52 15:21 15:50 16:19 16:48 17:16 17:45 time [s]! First wafer effect depends on clean time: dry clean 1: wafer dry clean 2: 1 wafer! Clean process indicates long term chamber drift dry clean 1 4,80E+07 4,30E+07 3,80E+07 3,30E+07 2,80E+07 3,00E+07 2,50E+07 2,00E+07 1,50E+07 1,00E+07 5,00E th 12 th of December 2000, - Germany median collision rate [s -1 ] Cond Dryclean! Comparison of two different dry clean recipies! Variation of process time: dry clean 1 > dry clean 2 electron collision rate vs. time [median] 0,00E+00 15:21 15:50 16:19 16:48 17:16 17:45 time [s] dry clean 2 Cond 4,80E+07 4,30E+07 3,80E+07 3,30E+07 2,80E+07 2,30E+07
11 Basic experiments - summary! General problem: " Etch rate is measured on resist test wafers on the cathode " It does not reflect etch rate of polymers on the chamber walls directly! Result of basic experiments: With higher O 2 concentration: " # higher resist etch rate on test wafers " # lower electron collision rate in plasma! Dry clean with high O 2 - concentration was chosen for further experiments! First wafer effect strongly depends on process time of dry clean. But even short dry clean shows significant impact on first wafer after clean.! Conclusions: " Application of a conditioning step after clean to reduce first wafer effect " Ratio between clean step and conditioning step has to be optimized Page th 12 th of December 2000, - Germany
12 Experiments on product wafers! Experiments on product wafers were done with dry clean recipe chosen from basic experiments (high O 2 concentration)! Questions: " Does dry clean influence the process on product wafers in the same way as on resist test wafers? " What s the impact of the CF 4 /O 2 dry clean on critical dimensions (CD) at STI etch?! # Variation of " Conditioning recipe " Clean step time " Conditioning step time! Targets: " Minimize of first wafer effects and " Maximize of polymer reduction at chamber wall Page th 12 th of December 2000, - Germany
13 Impact of dry clean with conditioning step on product wafers: Critical Dimensions top-cd vs. time [mean] top-cd [nm] 17:45 18:14 18:43 19:12 19:40 20:09 20:38 21:07 time red points: first productwafer after each clean! First wafer effect is indicated by critical dimensions, measured on product wafers! # Chosen dry clean process with conditioning step has still significant impact on critical dimensions at STI etch Page th 12 th of December 2000, - Germany
14 Impact of dry clean with conditioning step on chamber conditions electron collision rate on product wafers 6,00E+07 electron collision rate vs. time [median] 3,90E+07 median collision rate [s -1 ] 5,50E+07 5,00E+07 4,50E+07 4,00E+07 3,50E+07 3,00E+07 Dryclean 17:45 18:57 20:09 21:21 DC Clean-Step MemoryProduct IT-Mask-Step MemoryProduct IT-Mask-Step (next lot) time 3,50E+07 3,10E+07 2,70E+07 2,30E+07 Memory! First wafer effect, caused by dry clean, is indicated by electron collision rate! Additionally electron collision rate indicates drift of chamber conditions (mean down trend) Page th 12 th of December 2000, - Germany
15 Correlation top - CD vs. electron collision rate electron collision rate (IT-Mask) vs. top-cd top-cd [nm] 2,50E+07 2,70E+07 2,90E+07 3,10E+07 3,30E+07 3,50E+07 3,70E+07 3,90E+07 median electron collision rate [s -1 ]! Red points represent first product wafers after dry clean! Electron collision rate vs. top- CD does not correlate, although red points are seperated from others è because of low top- CD Page th 12 th of December 2000, - Germany
16 Impact of dry clean conditioning step without CF 4 / O 2 on Critical Dimension top-cd vs. time [mean] Page 16 top-cd [nm] 14:52 15:21 15:50 16:19 16:48 17:16 17:45 18:14 18:43 19:12 time! Now dry clean doesn t seem to have a big influence on critical dimensions! But: is dry clean still as effective? Polymers are generated in the conditioning step and without CF 4 / O 2 even more # possibly the clean effect is spoiled by the following conditioning step?) 11 th 12 th of December 2000, - Germany! Dry clean with CF 4 / O 2 in clean step, but no CF 4 / O 2 in conditioning step now!
17 Electron collision rate at conditioning step without CF 4 / O 2 electron collisionrate vs. time [median] median collisionrate [s -1 ] 3,80E+07 3,60E+07 3,40E+07 3,20E+07 3,00E+07 2,80E+07 14:52 15:21 15:50 16:19 16:48 17:16 17:45 18:14 18:43 19:12 time [s] DRAM product! No significant first wafer effect after each dry clean Page th 12 th of December 2000, - Germany
18 Variation of clean time and conditioning time! Notation: " CleanL - long clean (used in last experiments) " CleanS - short clean " CondL - long Conditioning " CondS - short Conditioning (used in last experiments)! Experiment in 3 runs on resist test wafers: " CleanL/CondS " CleanL/CondL " CleanS/CondS Page th 12 th of December 2000, - Germany
19 CleanL / CondS: comparison of plasma parameters Page 19 median collision rate [s -1 ] 4,60E+07 4,20E+07 3,80E+07 3,40E+07 electron collisionrate vs. time [median] IT-Mask-Step 3,00E+07 4,00E+06 14:24 14:52 15:21 15:50 16:19 16:48 17:16 time! But now there is a trend in electron density of resist wafers after each dry clean " plasma parameter response has changed with change in dry clean recipe! median electron density [cm -3 ] 1,20E+07 1,00E+07 8,00E+06 6,00E th 12 th of December 2000, - Germany 5,00E+08 4,60E+08 4,20E+08 3,80E+08 3,40E+08 3,00E+08! There is no significant trend in collision rate of resist wafers after each dry clean... "...as it was seen previously with CF 4 / O 2 in conditioning step or even without conditioning step electrondensity vs. time [median] Si-Etch-Step 14:24 14:52 15:21 15:50 16:19 16:48 17:16 time 2,00E+09 1,96E+09 1,92E+09 1,88E+09 1,84E+09 1,80E+09
20 Comparison of electron density for CleanL / CondS and CleanL / CondL Page 20 median electron density [cm -3 ] electron density vs. time [median] 5,00E+08 4,60E+08 4,20E+08 3,80E+08 3,40E+08 3,00E+08 14:24 14:52 15:21 15:50 16:19 16:48 17:16 CleanL/CondL Si-Etch-Step time CleanL/CondS median electron density [cm -3 ] 2,00E+09 1,96E+09 1,92E+09 1,88E+09 1,84E+09 1,80E th 12 th of December 2000, - Germany 5,00E+08 4,60E+08 4,20E+08 3,80E+08 3,40E+08 3,00E+08! Longer conditioning time doesn t seem to cause changes in trend of electron density of following resist wafers electrondensity vs. time [median] Si-Etch-Step 14:24 14:52 15:21 15:50 16:19 16:48 17:16 time 2,00E+09 1,96E+09 1,92E+09 1,88E+09 1,84E+09 1,80E+09
21 Comparison of electron density for CleanL / CondS and CleanS / CondS Page 21 median electron density [cm -3 ] 5,00E+08 4,60E+08 4,20E+08 3,80E+08 3,40E+08 3,00E+08 electrondensity vs. time [median] 17:16 17:45 18:14 18:43 19:12 19:40 20:09 20:38 CleanS / CondS Si-Etch-Step time CleanL / CondS 2,00E+09 1,96E+09 1,92E+09 1,88E+09 1,84E+09 1,80E+09 median electron density [cm -3 ] 11 th 12 th of December 2000, - Germany 5,00E+08 4,60E+08 4,20E+08 3,80E+08 3,40E+08 3,00E+08! Shorter clean time reduces first wafer effect on following resist test wafers! But shorter clean means less polymer reduction at chamber walls! electrondensity vs. time [median] Si-Etch-Step 14:24 14:52 15:21 15:50 16:19 16:48 17:16 time 2,00E+09 1,96E+09 1,92E+09 1,88E+09 1,84E+09 1,80E+09
22 Summary! Electron collision rate and electron density have been used to optimize a new clean recipe at Shallow Trench Isolation etch in AMAT MxP chamber.! Both plasma parameters show in real time " Dry clean impact on chamber conditions and first wafer effect on product wafers " And superimposed long term drift effects of chamber conditions! The general problem is dry clean optimization by etch rate measurement on resist test wafers. However, wall polymers are etched as well!! Because plasma parameters do indicate chamber condition drifts, they can be used to monitor clean efficiency with respect to wall polymers.! Therefore plasma parameter measurements can significantly help to improve efficiency & reduce costs of dry clean process development. Page th 12 th of December 2000, - Germany
23 Outlook! Dry clean optimisation from economic point of view (i.e. low cleaning incidence)! Investigation of new dry clean efficiency, i.e. by determining polymer thickness before each wetclean! Observation of inline parameters for products over long time! Do plasma parameters at new dry clean behave in a different way, than they did at the old one (long time over one wet clean cycle)? Page th 12 th of December 2000, - Germany
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