200mm Next Generation MEMS Technology update. Florent Ducrot

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1 200mm Next Generation MEMS Technology update Florent Ducrot

2 The Most Exciting Industries on Earth Semiconductor Display Solar 20,000,000x reduction in COST PER TRANSISTOR in 30 years 1 20x reduction in COST PER AREA in 15 years 2 3x reduction in COST PER WATT in 4 years At 1976 transistor prices, an ipod would have cost $3.2B 1 Source: SIA, IC Knowledge LLC 2 Source: Display Search, Nikkei BP, Applied Materials

3 Continued Technology Development 200mm market growth driven by consumer electronics, automotive, industrial and medical applications LED TFB & Others Discrete Power MEMS Analog APPLIED MATERIALS Over 40 years of technology development to enable life-changing innovations * All images used with owners permission

4 Expansion of MEMS Capabilities Applied Materials Supports MEMS Production and R&D DEVELOPING NEW EQUIPMENT, MATERIALS AND PROCESSES FOR MEMS Aluminum Nitride (AlN) Thick Aluminum (Al) RF and Mechanical Applications High Power Devices Sub-Micron MEMS Working within the Global MEMS Community

5 200mm MEMS Equipment Portfolio Applied Materials is growing its 200mm MEMS portfolio

6 Latest DRIE Technologies NEW DPS DTM DRIE Chamber for MEMS, Power Devices and TSV No In-Situ Chamber Clean allows best in class wafer throughput and extends Mean Time Between Cleans far beyond 500 RF Hrs! Tunable Source Coil Technology enables WIW etch depth and sidewall profile nu. < 2 % Hard Mask-Open Capability with dielectric etch rates approaching 750nm/min! High Speed Gas Switching enabling Bosch process with << 1sec etch and deposition times Low Temperature (-20 C) Capability for increased selectivity and sidewall profile control Demo Ready Pulsed High Power Low Frequency Generator eliminating undercut on SOI wafers Parameter Ramping with enhanced recipe control New DPS DTM Chamber (Actual Photo Shown)

7 Next Generation DRIE Capability Demo Ready High Etch Rates ( 22µm/min) and Fine Profile Control for TSV Ultra-High Aspect Ratio Sub-Micron MEMS Applications 400 nm Excellent End Point and Notch Control in SOI Applications! Low Mask Undercut (17nm) and Ultra-Small Sidewall Scallops (13nm) 7

8 Advanced Deposition Processes Adding new film processes in support of MEMS Demo Ready ECD Metal (>100µm) Single Step ( 10µm) Low Temp SiGe Epi-Silicon ( 50µm) SiO 2 Layer Ge Layer Al Layer Silicon Si Layer PVD AlN ( 2.5µm) (nu. << 0.5%) Thick ( 40µm) CVD SiO 2 High Dep Rate PVD Ge

9 Conclusion Applied Materials currently offers DRIE, CVD, PVD, CMP and Metrology Tools for MEMS. Applied Materials is continuing to expand its MEMS product portfolio with the aim of providing a complete MEMS solution in support of all process technologies that are critical to MEMS development. For More information about Applied Materials MEMS product portfolio please contact Applied Materials Sales. Applied Materials Confidential 9

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11 MEMS CVD SiGe Demo Ready Offering Low Temp, High Dep Rate Films for CMOS Compatible MEMS Parameters Target Requirement Actual Wafer to wafer uniformity +/- 5% <3% Within wafer uniformity +/-3% <2% 1 sigma Ge content 60 65% 60% Thickness 5 10um 10µm Conformality Fill 2:1 aspect ratio TBD SiGe Layer on SiH 4 USG Maximum temperature 425C 420C Deposition rate >100nm/min 236nm/min Resistivity < 5mΩ-cm < 4 mω-cm Residual stress MPa comp 130MPa comp Strain gradient < 5x10-5 µm -1 TBD Currently the only Single Step/Pass Process For Low Temp, Thick SiGe Films! SiGe Layer on Thermal SiGe Seed 11

12 MEMS CVD Thick Oxide Demo Ready PECVD TEOS Or SiH 4 based Low Temperature, Thick Oxide ( 22µm) Parameters TEOS SiH 4 Within wafer uniformity 1.18 % 0.98 % Thickness per Pass >5 um >5 um Maximum temperature 350 C 350 C Deposition rate >1300 nm/min >2300 nm/min Residual stress -43 MPa -48 MPa Refractive Index Defects 138 (> 0.2um) 20 (> 0.2um) 20µm Thick PECVD TEOS Single pass 5µm deposition, no clean required Target Applications Include: MEMS Photonics 12

13 Aluminum Nitride (AlN) Demo Ready Oct 12 AlN for Production at Both 6 and 8 Wafer Sizes Parameters Target Requirement WIW Uniformity (6 / 8 ) < 0.5% / <1.0 % Actual < 0.5 % (6 ) << 1% (8 ) Thickness 800nm 2.5µm Tunable Deposition rate >80 nm/min > 85nm/min FWHM Rocking Curve Maximum temperature 450 C 400 C Stress -100MPa to 400MPa Tunable Refractive Index 2.08 ± Surface Roughness < 2.5nm 1.5nm AlN Layer on Mo (Deposited on 8 Wafer) Applications in RF Devices and MEMS Actuator Devices 13

14 PVD Ge Films High Deposition Rate Ge Process For Thick Ge Films Demo Ready Parameters Actual WIW Uniformity < 2.6 % Ge Layer Thickness Deposition rate 540nm > 260 nm/min Al Layer Maximum temperature < 400 C Stress 221 MPa Bulk Resistivity (Ohm.cm) ~ 48 Si Layer Surface Roughness ~3.78 nm Often used as a Bonding Layer and Electrical Interconnect Tilted View of Top Surface Roughness ~ 3.78nm 14