Cypress Semiconductor Process Qualification Report
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1 Cypress Semiconductor rocess Qualification Report QT# VERSION 1.0 June 2007 Nitride Seal Mask (NSM) Qualification S4AD-5 Technology, Fab 2 All S4 Devices CYRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Frederick Whitwer Reliability Engineering Director rincipal Reliability Engineer (408) (408)
2 Nitride Seal Mask Qualification age 2 of 10 QUAL REORT RODUCT QUALIFICATION HISTORY DESCRITION OF QUALIFICATION UROSE New Technology S4AD-5/ New roduct, rogrammable Clock Generator, CY2414ZC, its product family and bond option. S4AD Technology Nitride Seal Mask (NSM) rocess Implementation in Fab2 using MX Equipment DATE COM. Apr 01 Oct S4AD Technology Nitride Seal Mask (NSM) rocess Implementation in Fab2 using Drytek Apr 07 Cypress products are manufactured using qualified processes. The technology qualification for this product is referenced above and must be considered to get a complete and thorough evaluation of the reliability of the product.
3 Nitride Seal Mask Qualification age 3 of 10 RODUCT DESCRITION (for qualification) Qualification urpose: Qualify S4AD Technology, Nitride Seal Mask rocess at Fab 2 using Drytek Marketing art #: Device Description: Cypress Division: All S4AD Devices 2.5V/3.3V, Commercial and Industrial Cypress Semiconductor Corporation Consumer and Computation Division TECHNOLOGY/FAB ROCESS DESCRITION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW Metal 2: 500A Ti/8,000A A1 0.5% Cu/300A TiW assivation Type and Materials: 3000A TeOs / 6,000A Si 3 N 4 Generic rocess Technology/Design Rule (µ-drawn): Single oly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer rocess ID: SiO 2 / 110A Cypress Semiconductor Round Rock, TX Fab2, S4AD-5 ACKAGE AVAILABILITY ACKAGE All All Qualified Assembly Sites ASSEMBLY FACILITY SITE Note: ackage Qualification details available upon request.
4 Nitride Seal Mask Qualification age 4 of 10 RELIABILITY TESTS ERFORMED ER SECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) ressure Cooker Test Temperature Cycle Acoustic Microscopy Test Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max = 3.3V, 125 C Dynamic Operating Condition, Vcc Max = 5.5V, 125 C Dynamic Operating Condition, Vcc Max = 5.75, 150 C Dynamic Operating Condition, Vcc Max= 5.5V, 125 C Dynamic Operating Condition, Vcc Max= 3.8V, 150 C 130 C, 5.25V, 85%RH recondition: JESD22 Moisture Sensitivity MSL1 168 Hrs, 85 C/85%RH+3IR-Reflow, 260 C+0, -5 C recondition: JESD22 Moisture Sensitivity MSL Hrs, 30 C/60%RH+3IR-Reflow, 260 C+0, -5 C 121 C, 100%RH, 15 sig recondition: JESD22 Moisture Sensitivity MSL1 168 Hrs, 85 C/85%RH+3IR-Reflow, 260 C+0, -5 C recondition: JESD22 Moisture Sensitivity MSL Hrs, 30 C/60%RH+3IR-Reflow, 260 C+0, -5 C MIL-STD-883C, Method 1010, Condition C, -65 C to 150 C recondition: JESD22 Moisture Sensitivity MSL1 168 Hrs, 85 C/85%RH+3IR-Reflow, 260 C+0, -5 C recondition: JESD22 Moisture Sensitivity MSL Hrs, 30 C/60%RH+3IR-Reflow, 260 C+0, -5 C Cypress Spec ,200V JEDEC EIA/JESD22-A114-B 2,200V MIL-STD-883, Method V Cypress Spec Age Bond MIL-STD-883, Method 2011 Ball Shear Cypress Spec Wire ull Cypress Spec Result /F
5 Nitride Seal Mask Qualification age 5 of 10 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate High Temperature Operating Life Early Failure Rate High Temperature Operating Life 1,2 Long Term Failure Rate 10,897 Devices 0 N/A N/A 0 M 180,000 DHRs FITs** 1 Assuming an ambient temperature of 55 C and a junction temperature rise of 15 C. 2 Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation AF = exp E k A 1 T T1 where: E A =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 ev/kelvin. T 1 is the junction temperature of the device under stress and T 2 is the junction temperature of the device at use conditions. ** FITs Rate calculation based on the Technology Qual.
6 Nitride Seal Mask Qualification age 6 of 10 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, Vcc Max) CY2414ZC (7C841400A) /1/2 TAIWN-T CY2414ZC (7C841400A) /1/2 TAIWN-T CY2414ZC (7C841400A) /4/5 TAIWN-T CY2414ZC (7C841400A) /4/5 TAIWN-T CY2414ZC (7C841400A) /7/8 TAIWN-T CY2414ZC (7C841400A) /7/8 TAIWN-T
7 Nitride Seal Mask Qualification age 7 of 10 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC CY8C26443A (8C26443D) TAIWAN-T COM 15 0 CY8C26432A (8C24423D) TAIWAN-T COM 15 0 CY7C53120E (7C531200C) CML-R COM 15 0 STRESS: AGE BOND CY8C26443A (8C26443D) TAIWAN-T COM 3 0 CY7C53120E (7C531200C) CML-R COM 3 0 STRESS: BALL SHEAR CY8C26443A (8C26443D) TAIWAN-T COM 10 0 CY7C53120E (7C531200C) CML-R COM 10 0 STRESS: BOND ULL CY8C26443A (8C26443D) TAIWAN-T COM 10 0 CY7C53120E (7C531200C) CML-R COM 10 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C26443A (8C26443D) TAIWAN-T COM 9 0 STRESS: ESD-HUMAN BODY CIRCUIT ER JEDEC EIA/JESD22-A114-B, 2,200V CY8C26443A (8C26443D) TAIWAN-T COM 9 0 STRESS: ESD-HUMAN BODY CIRCUIT ER MIL STD 883, METHOD 3015, 2,200V CY8C26443A (8C26443D) TAIWAN-T COM 3 0 CY7C53120E (7C531200C) CML-R COM 9 0 STRESS: HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, 150C,5.75V, Vcc Max CY7C53120E (7C531200C) CML-R STRESS: HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, 125C,3.3V, Vcc Max CY8C26443A (8C26443D) TAIWAN-T STRESS: HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE, 125C,5.5V, Vcc Max CY8C26443A (8C26443D) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T
8 Nitride Seal Mask Qualification age 8 of 10 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL STURATION TEST, 130C, 85%RH, 5.25V, RE COND 168 HR 85C/85%RH, MSL1 CY8C26443A (8C26443D) TAIWAN-T CY8C26432A (8C24423D) TAIWAN-T STRESS: RESSURE COOKER TEST (121C, 100%RH), 15 sig, RE COND 192 HR 30C/60%RH, MSL3 CY8C26443A (8C26443D) TAIWAN-T CY7C53120E (7C531200C) CML-R CY7C53120E (7C531200C) CML-R STRESS: TC COND. C -65C TO 150C, RE COND 168 HR 85C/85%RH, MSL1 CY8C26443A (8C26443D) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T CY8C26432A (8C24423D) TAIWAN-T CY8C26432A (8C24423D) TAIWAN-T CY8C26432A (8C24423D) TAIWAN-T STRESS: TC COND. C -65C TO 150C, RE COND 192 HR 30C/60%RH, MSL3 CY7C53120E (7C531200C) CML-R CY7C53120E (7C531200C) CML-R CY7C53120E (7C531200C) CML-R STRESS: STATIC LATCH-U TESTING (125C, 8.5V, ±200mA) CY8C26443A (8C26443D) TAIWAN-T COM 3 0
9 Nitride Seal Mask Qualification age 9 of 10 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC CY8C26443A (8C26443D) TAIWAN-T COM 15 0 CY8C26423A (8C26443D) TAIWAN-T COM 15 0 CY7C53120E4 (7C531200C) TAIWAN-T COM 15 0 STRESS: AGE BOND CY7C53120E4 (7C531200C) TAIWAN-T COM 3 0 CY8C24423A (8C24423B) TAIWAN-T COM 3 0 STRESS: BALL SHEAR CY7C53120E4 (7C531200C) TAIWAN-T COM 10 0 CY8C24423A (8C24423B) TAIWAN-T COM 10 0 STRESS: HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, 150C, 5.75V, Vcc Max CY7C53120E4 (7C531200C) TAIWAN-T STRESS: HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T STRESS: HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE, 150C,5.5V, Vcc Max CY8C24423A (8C24423B) TAIWAN-T STRESS: HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE, 125C, 3.5V, Vcc Max CY8C24423A (8C24423B) TAIWAN-T STRESS: ESD-HUMAN BODY CIRCUIT ER JEDEC EIA/JESD22-A114-B, 2,200V CY8C24423A (8C24423B) TAIWAN-T COM 9 0 STRESS: ESD-HUMAN BODY CIRCUIT ER MIL STD 883, METHOD 3015, 2,200V CY8C24423A (8C24423B) TAIWAN-T COM 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C53120E4 (7C531200C) TAIWAN-T COM 9 0 CY8C24423A (8C24423B) TAIWAN-T COM 9 0
10 Nitride Seal Mask Qualification age 10 of 10 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL STURATION TEST, 130C, 85%RH, 5.25V, RE COND 192 HR 30C/60%RH, MSL3 CY8C24423A (8C24423B) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T STRESS: RESSURE COOKER TEST (121C, 100%RH), 15 sig, RE COND 168 HR 85C/85%RH, MSL1 CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T STRESS: RESSURE COOKER TEST (121C, 100%RH), 15 sig, RE COND 192 HR 30C/60%RH, MSL3 CY7C53120E4 (7C531200C) TAIWAN-T CY7C53120E4 (7C531200C) TAIWAN-T STRESS: TC COND. C -65C TO 150C, RE COND 168 HR 85C/85%RH, MSL1 CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T CY8C24423A (8C24423B) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T CY8C26443A (8C26443D) TAIWAN-T STRESS: TC COND. C -65C TO 150C, RE COND 192 HR 30C/60%RH, MSL3 CY7C53120E4 (7C531200C) TAIWAN-T CY7C53120E4 (7C531200C) TAIWAN-T CY7C53120E4 (7C531200C) TAIWAN-T STRESS: STATIC LATCH-U TESTING (125C, 8.5V, ±200mA) CY8C24423A (8C24423B) TAIWAN-T COM 3 0 STRESS: WIRE ULL CY7C53120E4 (7C531200C) TAIWAN-T COM 10 0 CY8C24423A (8C24423B) TAIWAN-T COM 10 0
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