Cypress Semiconductor 2-Die Stacked & Molding Compound Package Qualification Report
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1 Cypress Semiconductor 2-Die Stacked & Molding Compound ackage Qualification Report QT# VERSION 1.0 March, 2003 CYM52KQT36AV25 18Mb ipelined MCM with QDR Architecture in 165-ball FBGA package (2-die) using Toshiba KE-G1270 Molding Compound, MSL 3 ASE Taiwan (TAIWN-G) CYRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Al Laxman Reliability Director Quality Engineering (408) (408)
2 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 2 of 7 ACKAGE QUALIFICATION HISTORY Qual Report Description of Qualification urpose 18Mb ipelined MCM with QDR Architecture, CYM52KQT36AV25 in 165-ball FBGA package (2-die stacked) using M/C Toshiba KE-G1270, Ablestik 2025D, QMI 1536 MSL3 at ASE Taiwan Date Comp Feb 03
3 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 3 of 7 MAJOR ACKAGE INFORMATION USED IN THIS QUALIFICATION ackage Designation: BB165 ackage Outline, Type, or Name: 165-ball Thin Ball Grid Array (FBGA) Mold Compound Name/Manufacturer: Toshiba KE-G1270 Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: >28% Substrate Material: BT Resin Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%b Die Backside reparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Dexter / Ablestik Die Attach Material: QMI 1536 / 2025D Die Attach Method: Epoxy Bond Diagram Designation: Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA C/W: 20.5 C/W ackage Cross Section Yes/No: N/A Assembly rocess Flow: Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRITION Test Location: ASE Taiwan (TAIWN-G) Fault Coverage: 100%
4 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 4 of 7 RELIABILITY TESTS ERFORMED ER SECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc = 2.875V, 150 C Dynamic Operating Condition, Vcc = 2.875V, 150 C Result /F Temperature Cycle JEDEC22, Condition C, -65 C to 150 C recondition: JESD22 Moisture Sensitivity MSL3 192 Hrs., 30 C/60%RH+3IR-Reflow, 220 C+5, -0 C High Accelerated Saturation ressure Cooker 30 C, 2.75V, 85%RH recondition: JESD22 Moisture Sensitivity MSL3 192 Hrs., 30 C/60%RH+3IR-Reflow, 220 C+5, -0 C 121C, 100%RH recondition: JESD22 Moisture Sensitivity MSL3 192 Hrs., 30 C/60%RH+3IR-Reflow, 220 C+5, -0 C High Temperature Storage 150C, no bias Internal Visual Cypress Spec Die Shear Cypress Spec Ball Shear Cypress Spec Bond ull Cypress Spec Thermal Shock 125C, -55C Cypress Spec X-Ray Cypress Spec Acoustic Microscopy Test, MSL3 Cypress Spec MSL 3
5 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 5 of 7 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF 3 Failure Rate High Temperature Operating Life Early Failure Rate High Temperature Operating Life 1,2 Long Term Failure Rate 1,515 0 N/A N/A 0 M 119,160 DHRs FIT 1 Assuming an ambient temperature of 55 C and a junction temperature rise of 15 C. 2 Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation AF = exp E k A 1 T T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 ev/kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions..
6 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 6 of 7 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC MICROSCOE, MSL3 CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 15 0 CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G COM 15 0 CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 15 0 STRESS: HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, 150C, 2.875V, Vcc Max CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G STRESS: HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE, 150C,2.875V, >Vcc Max) CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G STRESS: HIGH TEM STORGAGE, LASTIC, 150C CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G STRESS: THERMAL SHOCK, CONDITION B 125C, -55C CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G STRESS: EXTERNAL VISUAL CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 15 0 STRESS: INTERNAL VISUAL CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 5 0 STRESS: HYSICAL DIMENSIONS CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 5 0 STRESS: X-RAY CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 15 0 STRESS: DIE SHEAR CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 15 0 STRESS: BOND ULL CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM 10 0 STRESS: BALL SHEAR CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G COM STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.75V, RE COND 192 Hrs., 30C/60%RH, MSL3 CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G
7 ackage: 165-ball, FBGA package (13 x 15x1.5 mm) age 7 of 7 Reliability Test Data QT #: Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: RESSURE COOKER TEST, 121C, 100%RH, RE COND 192 Hrs., 30C/60%RH, MSL3 CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G STRESS: TC CONDITION C, -65C TO 150C, RE COND. 192 Hrs., 30C/60%RH, MSL3 CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) /L1/L2 TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G CYM52KQT36AV25-BBC (M52KQT36A) TAIWN-G
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