REDUCING OXYGEN FLOW RATE IN THE BRUCE FURNACE
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1 REDUCING OXYGEN FLOW RATE IN THE BRUCE FURNACE Kennedy Jensen, Dr. Lynn Fuller
2 ABSTRACT This experiment explored the usage of oxygen gas in the Bruce furnace. Since oxygen gas is used often in the growth of silicon dioxide, a method for reducing the amount of oxygen used in the Bruce Furnace is desired to reduce cost. We began with a recipe for 500Angstroms of oxide using a dry oxide process on clean wafers. We ran the recipe using an oxygen flow rate of 10L/min and then 5L/min and compared both the thickness and uniformity of oxide growth on the wafers. We then ran a similar experiment with a recipe for 1000Angstroms of oxide. The results showed that cutting the oxygen flow rate (and thereby the cost of oxygen for each run) in half had no affect on oxide thickness and uniformity. 2
3 PROCEDURE Two bare wafers were placed in Tube 1 of the Bruce Furnace and recipe 250 was run for 500Angstroms of Dry Oxide. The wafers were measured with the Spectramap and data was recorded. The wafers were etched bare in BOE. Recipe 250 was altered, reducing the oxygen flow rate for the Soak period from 10L/min to 5L/min. The wafers were placed in Tube 1 and recipe 250, now altered, was run again. The wafers were measured with the Spectramap and data was recorded. Values for oxide thickness and uniformity were compared. 3
4 WAFER 1 RECIPE A 10L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: # Sites/Good: 81/80 4
5 5
6 WAFER 2 RECIPE A 10L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: # Sites/Good: 81/81 6
7 7
8 WAFER 1 RECIPE A 5L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 8
9 9
10 WAFER 2 RECIPE A 5L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 10
11 11
12 COMPARISON AND RESULTS 10L/min 5L/min 10L/min 5L/min Wafer 1 Wafer 1 Wafer 2 Wafer 2 Mean Standard Deviation % % % % Min Max Range #Sites/ Good 81/80 81/81 81/81 81/81 12
13 WAFER 1 RECIPE A 10L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 13
14 14
15 WAFER 2 RECIPE A 10L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 15
16 16
17 WAFER 1 RECIPE A 5L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 17
18 18
19 WAFER 2 RECIPE A 5L/MIN 1000C Mean: Standard Deviation: % Minimum: Maximum: Range: #Sites/Good: 81/81 19
20 20
21 COMPARISON AND RESULTS 10L/min 5L/min 10L/min 5L/min Mean Standard Deviation % % % % Min Max Range #Sites/ Good 81/81 81/81 81/81 81/81 21
22 CALCULATIONS ENSURING SUFFICIENT QUANTITY OF OXYGEN GAS AVAILABLE Assume that 50 Wafers are present for a 500Angstrom oxide growth recipe, all wafers are coated uniformly, oxygen gas flows at 5L/min and is at STP upon entering Bruce Furnace. Si + O 2 SiO 2 SiO 2 Density: 2.65g/cm kg/m 3 SiO 2 Molar Mass: 60.08g/mol.06008kg/mol 22
23 MOLES O 2 NEEDED FOR 500A SIO 2 Volume SiO 2 Each Wafer V πr 2 h π(3in x (1cm/0.3937in) x (1m/100cm) ) 2 (500A x (10-10 m/1a)) x m 3 Mass SiO 2 Each Wafer Density = Mass/Volume Mass = (Density)(Volume) (2650kg/m 3 )(9.121 x m 3 ) = 6.65 x 10-7 kg Total Moles SiO 2 (50 Wafers) Moles = Mass/Molar Mass (6.65 x 10-7 kg /.06008kg/mol)(50 wafers) =5.535 x 10-4 mol SiO 2 Total Moles O 2 (50 Wafers) Si + O 2 SiO x 10-4 mol SiO 2 (1 mol O 2 / 1 mol SiO 2 ) x 10-4 mol O 2 necessary to grow 500A SiO 2 23
24 MOLES O 2 PROVIDED BY 500A SIO 2 RECIPE Liters of O 2 Used by Recipe (47 minutes)(5l/min) 235L Moles of O 2 Used by Recipe (235L O 2 )(1mol / 22.4L) mol O 2 provided 24
25 HOW MUCH EXCESS OXYGEN? (10.49 mol provided) / (5.535 x 10-4 mol needed) 19,000 times the necessary amount 25
26 CONCLUSION The data above shows that if the oxygen flow rate is reduced from 10L/min to 5L/min for a dry oxide growth process, it will not affect the thickness or uniformity of the oxide grown. Therefore, the oxygen usage can be reduced for dry oxide growth processes in recipes that use a 10L/min oxygen flow rate during the soak period. This could save approximately $2000 in cost every year. 26
27 REFERENCES Silicon VLSI Technology Fundamentals, Practice and Modeling. Plummer, Deal and Griffin 27
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