Advanced Modelling & Correction. E-beam Lithography Proximity and Process Effects
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1 Advanced Modellg & Correction for E-beam Lithography Proximity and Process Effects Ulrich Hofmann, GenISys GmbH
2 Outle Proximity and Process distortions Electron effects (beam blur + scatterg) Process effects (midrange resist and etchg) Correction technologies Correction targets Dose modulation / Shape modulation 3D correction Calibration of correction function (PSF) Calibration process Results Summary
3 Electron Effects e - Beam Blur: ~ nm Forward scatter: ~ nm Backscatter: ~ 10 µm
4 Process Effects e - Loadg: ~ nm Diffusion: ~ nm
5 Effects Summary Short Range Effects E-Beam: beam blur + forward-scatter nm Mid Range Effects nm Resist blur/diffusion nm Development/Etch loadg nm E-Beam: mid-range scatter Long Range Effects µm E-Beam: back-scatter Ultra Long Range Effects few mm E-Beam: foggg
6 Outle Proximity and Process distortions Electron effects (beam blur + scatterg) Process effects (midrange resist and etchg) Correction technologies Correction targets Dose modulation / Shape modulation 3D correction Calibration of correction function (PSF) Calibration process Results Summary
7 Problem Statement Process Correction what s the target? CD? Thickness? Shape Fidelity?
8 CD control: Backscatter Corrections Layout: 60 nm rgs array Measured CD at center 58 nm Measured CD at edge: 60 nm CD variation center to edge: 2 nm Source: Weizmann Institute
9 CD control: Mid- and Shortrange Mid-range effects caused by process and/or electron scatterg Short-range caused by beam blur 100 x100 pads 20 nm les Source: Weizmann Institute
10 Shape Fidelity by Shape Modulation Le End Shorteng Corner Sharpness Rule based mechanism suggested by L. Occola, ANL to be implemented soon
11 3D Structured Surfaces Created unpreceeded capability to perform 3D corrections Source: NNFC Korea Source: Weizmann Institute
12 3D Multilayer Resists T-Gates, Bridges Source: Weizmann Institute
13 Outle Proximity and Process distortions Electron effects (beam blur + scatterg) Process effects (midrange resist and etchg) Correction technologies Correction targets Dose modulation / Shape modulation 3D correction Calibration of correction function (PSF) Calibration process Results Summary
14 But... How to get PSF? Process PSF is combation of e - -scatterg and resist/pattern transfer process Determe e - -scatterg parameters by Monte Carlo Determe process contribution (mid-range terms) by experimental method Resist blur, etch loadg... Convolve scatterg/process PSF s to one Layout BEAMER has necessary tools for experimental calibration Metrology support, Simulation and Optimizer allow calibration of PSF to experimental data Application work to simplify method progress
15 Layout BEAMER APC Flow Calibration of process correction function (PSF) by experimental data:
16 Calibration Layout CD variation for screeng process the range 40 nm 1µm fluence range Iso-Le, 50 % L/S, Gap Gaps 40nm-1µm
17 Calibration Process: Long-Range PEC: Beta and Eta from MC simulation, literature or experiments Expose calibration pattern Resist development (and etchg) Measure CD at defed metrology sites Import measurement results to Layout BEAMER Defe variables Optimizer module Set simulation module with variables Run Optimization
18 Result of Optimizer Optimizer process is automatic Typical run-time 1-2 hours Output are modellg (correction) parammeter with the best fit to experiment
19 Calibrated kernel 50keV exposure with variable shape beam writer Data after long range (back-scatter) PEC Comparison experimental & simualtion data after calibration Average Error 1.4nm, Max Error 4.9nm alpha = gamma1 = nue1 = gamma2 = nue2 =
20 Model Calibration Summary Found Large Predictive Power Model calibrated on 1D data (le/gap Learity) Predicts through-pitch behaviour correctly Predicts 2D effects (LES, contacts) correctly Contact learity Le End Shorteng
21 Outle Proximity and Process distortions Short-range effects (beam blur + forward-scatter) Long range effect (back-scatter) Process effects (midrange resist and etchg) Correction technologies Correction targets Dose modulation / Shape modulation 3D correction Calibration of correction function (PSF) Calibration process Results Summary
22 Summary / Acknowledgement Layout BEAMER offers complete framework for characterizg and correction of pattern density dependent process effects We would like to thank Peter Hudek for his support, helpful discussions and feedback IMS Stuttgart for experimental validation
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