Lecture 26 - The "Long" Metal-Oxide-Semiconductor Field-Effect Transistor (cont.)
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1 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture 26-1 Lecture 26 - The "Long" Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) Contents: April 11, 2007 I. Current-voltage characteristics of ideal MOSFET (cont.) 2. Charge-voltage characteristics of ideal MOSFET Reading assignment: del Alamo, Ch. 9, ( ): 9.5 Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
2 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture 26-2 Key questions Why does the drain current in a MOSFET saturate at high VDs? What charges should we keep track of as we construct a model for the charge-voltage characteristics of the MOSFET? Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
3 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture I-V characteristics of ideal MOSFET (cont.) Problems with MOSFET current model for linear regime as VDs approaches VGS- VT. Problems centered around g = L: Local gate overdrive goes to zero + lqil4 0. How can current be supported? Gradual-channel approximation becomes invalid. Sheet-charge approximation becomes invalid. Lateral field so large that linearity between field and velocity invalid. Model that can handle VDs values all the way up to VGS- VT is rather complicated; but... actually, don't need new model! Reason: when VDs approaches VGS-VT, IDchanges very little due to prominent debiasing on the drain side of the channel. Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
4 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture 26-4 Ask a different question: how close can VDs get to VGS- VT before simple model fails? Answer: up to about 80% of VGS- VT which means up to about 96% of ID,,,. Hence, simple model is pretty good up to VDs = VGS- VT. Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
5 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 26-5 What happens if VDs reaches or exceeds VGS- VT? Electron concentration at y = L drops to very small concentrations + depletion region appears at y = L: pinch- 08. Depletion region is no barrier to electron flow: field "pulls" electrons into drain. inversion layer depletion region /T , III ' pinch-off point "----- drain P pinch-off region a) linear regime VDS<VDS,,~ b) pinch-off VDS=VDS,,~ c) saturation regime VDS>VDS,,~ As VDs exceeds VGS- VT, depletion region widens into channel underneath gate; all extra voltage consumed in depletion region; electrostatics of channel, to first order, unperturbed; channel current unchanged + MOSFET in saturation. C~teas: Jeslis del Alamo, course materials for Integrated M~croelectron~c Dev~ces,Spr~ng2007. MIT OpenCourseWare ( Massachusetts Inst~tuteof Technology. Downloaded on [DD Month W]
6 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 26-6 Lateral electrostatics in saturation: local gate overdrive C~teas: leslis del Alarno, course rnater~als for Integrated M~croelectron~c Dev~ces, Spr~ng MIT OpenCourseWare ( Massachusetts Inst~tute of Technology. Downloaded on [DD Month W]
7 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture 26-7 Current model in saturation: IDdoes not increase passed VDs = VGS - VT. Hence, VDs at which transistor saturates is denoted as VDssat: Current-voltage characteristics: Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
8 6.7205/ htegrated Microelectronic Devices - Spring 2007 Lecture 26-8 Why square dependence? VGS T+ VDSsat T+ higher lateral field in channel at saturation. Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
9 6.7205/ h tegrated Microelectronic Devices - Spring Lecture 26-9 LI Energy band diagrams (VGS > VT): Ec channel S D EF Efe _=, _ t ~ VDS --. VDS=O O<VDs<VDssat a) linear b) linear VDS=~DSS~~ VDs>VDssat c) pinch-off d) saturation Pinch-off point: region of "free fall" of electrons. Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
10 6 720J/3 43J- Integrated Microelectronic Devices - Spring 2007 Lecture Charge-voltage characteristics of ideal MOSFET Two types of stored charge in a MOSFET: depletion charge in: - source-body pn junction - drain-body pn junction - MOS structure inversion charge vbs I, ;;ision depletion I region ' Clte as: leslis del Alarno, course rnaterlals for Integrated M~croelectron~c Devlces, Sprlng MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
11 6 720J/3 43J- Integrated M~croelectronic Devlces - Spring 2007 Source-body junction depletion charge (assume strongly asymmetric junction) : with Clte as: les6s del Alamo, course materials for Integrated M~croelectron~c Devlces, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W].
12 6.7205/ Integrated IlIicroelectronic Devices - Spring 2007 Lecture Drain-body j~~nction depletion charge (assume strongly asymmetric junction) : with Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
13 6.7205/ Integmted Microelectronic Devices - Spring 2007 Lecture EI MOS depletion charge: In cut-off (VGs < VT): There is no inversion layer. But there is a depletion layer: Increases with VGS. In linear and saturation regimes (VGS > VT) : Independent of VGS. Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT Opencourseware ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
14 6.7205/ h tegr~tted MicroeIectronic Devices - Spring 2007 Lecture Depletion charge gives rise to capacitive effects: LI Source-body junction capacitance: with CI Drain- body junction capacitance: with In general, CjD < Cjs, because Ls = Lo and VDs > 0. Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
15 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture MOS depletion capacitance: In linear and saturation regimes: Cite as: leslis del Alarno, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
16 6.7205/ Integrated Microelectronic Devices - Spring 2007 Lecture Key conclusions MOSFET current in saturation regime: Value of VDs that saturates transistor: VDSsat = VGS- VT Three types of depletion charge in a MOSFET: - source-body pn junction - drain-body pn junction - MOS structure In saturation, capacitance associated with depletion layer under MOS structure: Cite as: leslis del Alamo, course materials for Integrated Microelectronic Devices, Spring MIT OpenCourseWare ( Massachusetts Institute of Technology. Downloaded on [DD Month W]
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