EUV Lithography Development in the United States

Transcription

1 EUV Lithography Development in the United States 4 th International Symposium on Extreme Ultraviolet Lithography (EUVL) November 7-9, 2005 San Diego, CA Stefan Wurm SEMATECH, the SEMATECH logo, AMRC, Advanced Materials Research Center, ATDF, the ATDF logo, Advanced Technology Development Facility, ISMI and International SEMATECH Manufacturing Initiative are service marks of SEMATECH, Inc. All other service marks and trademarks are the property of their respective owners.

2 Over 70 Organizations in North America Working on EUVL Laboratories and Universities (25) Argonne National Laboratory Columbia University Lawrence Berkeley National Laboratory Lawrence Livermore National Laboratory MIT Lincoln Labs NIST NRL RIT Sandia National Laboratories Colorado State University Cornell University Northeastern University Rutgers, The State University of New Jersey U. at Albany, SUNY U. of California Berkeley U. of Central Florida U. of Colorado U. of Illinois U. of Maryland U. of Minnesota U. of Nevada U. of North Carolina Charlotte U. of Texas U. of Wisconsin Stanford University Additions in 2005 Suppliers (37) ADE AERONEX ASML ASML Optics Conexant Corning Inc. Corning Tropel Corp. Cymer Consortia (7) EUV LLC SEMATECH SEMI SRC DARPA NSF INVENT Dupont Photomask Energetiq Etec EUV Technology FALA Technologies Invax Janos Tech. JMAR KLA-Tencor Luxel IC Companies (6) AMD IBM Infineon USA Intel Micron Freescale Rohm & Haas Rohwedder O hara Schott-Lithotec Opimax Swales Aerospace ORA Thermacore Osmic Tinsley Paragon Optics Veeco Photronics Wave Optics Plex LLC Prism Comp. Sci. QED Reflective X-Ray Optics REO

3 EUV Source Source Fundamentals Collector Erosion / Lifetime / Stability Cheap replaceable collectors Coherent EUV Sources

4 EUV Source Development Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Cymer (Sn and Li LPP), PLEX LLC (Li DPP), and Energetiq (Xe DPP) are actively engaged in EUV source development SEMATECH is enabling research to understand fundamentals of source limits and to develop metrology standards DPP and LPP fundamentals for Xe and Sn to increase conversion efficiency Testing efficiency of various debris mitigation approaches Sn delivery system feasibility EUV source metrology development and testing Additional EUV source programs are funded by DARPA, NSF, and SRC Sn LPP Source, Courtesy of Cymer Li DPP Source, Courtesy of PLEX LLC

5 EUV Source Collector Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Intermediate focus 4-Shell Nested Wolter Collector Collector Degradation Mechanisms Damage Source Effect Mitigation Micro Particles Erosion Foil Trap Fast Ions Erosion Gas Curtain Atomic Debris Reflection loss Heating/ Cleaning Ref: Malcolm Gower, Exitech EUV Perspective Meeting, May 10, 2005

6 EUV Collector Erosion Ion sputtering identified as the primary mechanism for both Xe LPP (ETS) and DPP (XTREME technologies) EUV sources Analogous work for Sn DPP source underway in 2005 LPP Collector Erosion (ETS) DPP Collector Erosion Benchmarking erosion with commercial Xe DPP source Neutral site condenser materials erosion benchmarking

7 EUV Collector Coating Stability Mo/SiC multilayer coating exhibits good thermal stability XTEM of Mo/SiC after 400ºC for 48 hours Stabilization Time (hr) Temperature ( o C) The relaxation process in Mo/SiC MLs is complete in ~1 hour at 500 C Mo SiC 10 nm Si substrate Ref: S. Bajt and D. Stearns, Appl. Opt. (accepted) Technical contact: Saša Bajt, bajt@llnl.gov. This work was performed under the auspices of the U.S. Department of Energy by the University of California Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48 and funded by Intel Corp. Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Experiment & simulation are in good agreement.

8 EUV Collector Smoothing Polyimide smoothes diamond-turned collector optics Visible light interferometry Height Map Slope error = 100 μrad rms 140 μm Optical profilometry Diamond- turned Aluminum surface, as received from manufacturer 180 μm Ref: R. Soufli, et al., Opt. Eng. 43(12), (2004) Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Diamond turned - Aluminum surface, after polyimide and Mo/Si multilayer coating 10-2 σ = 2.7 Å rms Technical contact: Regina Soufli, regina.soufli@llnl.gov. This work was performed under the auspices of the U.S. Department of Energy by the Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48 and was funded, in part, by Intel Corp. PSD (nm 4 ) 100 nm 0 nm nm diamond-turned Al polyimide on Al, ML-coated σ = 17.6 Å rms Frequency (nm -1 )

9 Compact, Coherent EUV Source Development at the New EUV Science & Technology Center Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Courtesy of Prof. David Attwood, LBNL

10 Table-top EUV Lasers J.J. Rocca et al., Presented at SPIE Conf San Diego (2005) Gain saturated operation demonstrated High resolution imaging with a 13.9 nm table-top laser 100 nm lines Images with resolution better than 50 nm

11 EUV Mask Defect-free Multilayer Deposition Substrate & Blank Cleaning Defect-free Reticle Handling Defect Mitigation Actinic Inspection

12 SEMATECH Mask Blank Development Center (MBDC) Defect Reduction Progress Stefan Wurm, 2005 EUVL Sympoisum/ US-Update SEMATECH MBDC EUV Blank Defect Reduction Progress MBDC Roadmap: ML Added Defects MBDC ML Added Defects SEMATECH Roadmap: Total Defects MBDC Measured Total Defects Pilot Line Requirement HVM Requirement Defect density scaled to 25 nm (cm-2) adders, 70nm PSL, No ML/ML 1 adder, 80nm PSL, ML over ML 18 defects, 70nm PSL 0.01 Pilot Line Requirement HVM Requirement Jun-03 Dec-03 Jun-04 Dec-04 Jun-05 Dec-05 Jun-06 Dec-06 Jun-07 Dec-07 Jun-08 Dec-08

13 Quartz Cleaning in SEMATECH MBDC Early results with in-house cleaning module are very encouraging Further improvements are expected as cleans process is optimized 25 defects 50 nm SEMATECH MBDC Cleaning 1 defect 50 nm Steag-Hamatech ASC5500

14 Shuffler Tool Installed at SEMATECH Enables 100% Automated Testing of Reticle Protection Solutions Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Demonstrated < 0.20 defect adders in automated mask handling using the Brooks shuffler tool The ~0.2 particle level is of the same magnitude as the noise level of the Lasertec M1350 defect inspection tool Size of particles added in shuffler particles is in the range of nm (BIN4 BIN10) PSL equivalent. Majority of particles in the high BINs ( µm) from known sources outside the shuffler tool Low defectivity mask transfer capability enables SEMATECH to quantify the mask protection efficiency of reticle protection designs identify areas for hardware improvement provide direction to the industry for EUV mask handling and protection standardization Adders/Run BIN BIN PSL equivalent [nm] BIN PSL size vs. BIN on Quartz BIN BIN BIN 20 LaserTec BIN 0.00 BIN BIN

15 SEMATECH MBDC Defect Pareto In-house cleaning has significantly reduced particles. Pits/scratches now account for ~2/3 of our defects. Pareto of Defect Types Pareto of Major Defect Types: MBDC May 2005 particle 22% pit&scratch 67% other 11% Source: Lasertec M1350 ADC defect classification Further progress will require fewer pits/scratches, or methods to mitigate them during coating.

16 LLNL Substrate Smoothing XTEM image of a smoothed 70 nm substrate line and trench Ref: P.B. Mirkarimi et al., J. Nanosci. and Nanotech. (accepted) Technical contact: Paul Mirkarimi, mirkarimi1@llnl.gov@llnl.gov. This work was performed under the auspices of the U.S. Department of Energy by the Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48 and funded by Intel Corp.

17 SEMATECH MBDC Veeco Multilayer Deposition Tool Current focus on substrate defect (pit/scratch) mitigation by tool upgrade Current tool & chamber configuration depo position target substrate etch position target substrate Smoothing chamber configuration (planned) assist source (hide) assist source (etch)

18 SEMATECH Actinic Inspection Tool Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Mode 1 Defect Scanning Wavelength: 13.5 nm Smallest spot size: ~1 µm Throughput: 2 cm 2 / hour Mode 2 High Resolution Imaging Wavelength: 13.5 nm Angle of incidence: 6 Resolution: 107 nm Field Size: 10 µm x 10 µm Throughput: < 10 sec

19 Actinic Mask Inspection at the ALS Stefan Wurm, 2005 EUVL Sympoisum/ US-Update High-speed: Scanning Mode Illumination brightfield 1 µm spot 2cm 2 /hr Scanning Zone plate microscope: Imaging Mode CCD Illumination 1st-order darkfield Mask Scanned test field 3x1 mm 0-order NA r = 45 nm ƒ= 1 mm ZP Mask EUV Image of star pattern nm at the mask

20 Reflection Mode EUV Microscope Image of Si wafer with polysilicon lines obtained with a 46.9 nm table-top laser (sample courtesy of B. Tracy and J. An, AMD) Reflection mode imaging with a 46.9 nm table-top capillary discharge laser 60 sec exposure 750X magnification Ref: F. Brizuela et al., Opt. Express 13, 3983 (2005) 2 µm 100 nm lines 800 nm spaces 250 nm lines 250 nm spaces

21 EUV Optic Projection Optics Lifetime / Contamination Projection Optics Testing

22 EUV Optics Life Testing Goal is to support cap layer and accelerated lifetime testing development with fundamental understanding of optics degradation mechanisms Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Three main tasks: Temperature Programmed Desorption Data Obtained at Rutgers U. Ru large textured grains (longer lifetime) 2 Si Ru O H 2 O Ru small randomly oriented grains (shorter lifetime) Determine role of microstructure in lifetime of EUV optics cap layers (LLNL) Si Ru O H 2 O 1 Determine role of crystallography and impurity surface chemistry in oxidation of EUV optics cap layers (Rutgers University) 3 Determine role of trace hydrocarbon chamber contaminants (NIST)

23 EUV Projection Optics Testing LLNL & Canon have designed and constructed an ultra-precise interferometer for aligning EUV optical systems WRS The key is a calibrated wavefront reference source Optical fiber Both symmetric & non-symmetric errors are calibrated CCD WRS Pinhole mirror Near-perfect spherical waves formed by diffraction Measured systematic error of WRS = 0.16 nm rms Can be removed from measurement Optical fibers Ref: M.A. Johnson et al., Proc SPIE, Vol (2005) Technical contact: Michael Johnson, mike-johnson@llnl.gov. This work was performed under the auspices of the U.S. Department of Energy by the University of California Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48 and funded by Canon.

24 EUV Resist US Micro Exposure Tools (MET) SEMATECH Berkeley MET Intel s MET SEMATECH Albany MET

25 Micro-Exposure Tools (MET) in the US SEMATECH MET at Berkeley, CA Operating since late 2003 Intel MET in Portland, OR Operating since late 2004 SEMATECH MET at the EUV Resist Test Center (EUV RTC) in Albany EUV RTC opened to customers end of September 2005

26 EUV MET Imaging System Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Optical System Layout Image Contrast Aerial Image Contrast from EUV- Measured Wavefront (Berkeley MET) Half CD Pitch (nm) (nm) Specifications λ 13.5 nm NA 0.3 σ 0.55/0.36 Field 0.2 x 0.6 mm Mag 5x x dipole rotated dipole annular, Ref: Patrick Naulleau, LBNL EUV Perspective Meeting, May 10, 2005

27 EUV Resist Imaging at Berkeley Stefan Wurm, 2005 EUVL Sympoisum/ US-Update KRS Resist, Monopole Illumination 45 nm 40 nm 35 nm 32.5 nm 30 nm KRS resist courtesy, G. Walraff & C. Larson, IBM Ref: Patrick Naulleau, LBNL - EUV Perspective Meeting, May 10, 2005

28 EUV Resist Imaging at Intel Stefan Wurm, 2005 EUVL Sympoisum/ US-Update Exitech MS-13 EUV Microstepper Nested Lines in Resist 45 nm ½ pitch, 160 nm DOF Contact Holes λ 13.5 nm NA 0.3 σ 0.55/0.36 Field 0.2 x 0.6 mm Mag 5x 40 nm CD, 120 nm pitch Ref: Jeanette Roberts, Intel - MNE Conference, September 21, 2005

29 EUV Resist Imaging at Intel 0.3 NA 0.55/0.36 σ 8 mj/cm 2 30 nm isolated line 90 nm thick 80 nm DOF Ref: Jeanette Roberts, Intel - MNE Conference, September 21, 2005

30 EUV RTC Tool Set Hitachi S-9380 TEL ACT-12 and Exitech MS-13 MET Therma-Wave Optiprobe OP-5340 All tools are equipped to process 200 and/or 300 mm wafers. 200 mm wafers are processed in 300 mm FOUPs with 200 mm inserts.

31 EUV Micro Exposure Stepper Exitech MS-13 5X optics, 0.3 NA 600 µm x 600 µm field 10-7 mbar vacuum in exposure chamber RGA monitoring for H 2 0/HC limits at wafer level: H 2 O 9 x 10-8 mbar HC 5 x mbar XTREME XTS gas discharge Z-pinch plasma source Wavelength = 13.5 nm Power = 35 W/2π at 1000 Hz

32 EUV MET Resolution Status 50 nm 1:1 45 nm 1:1 40 nm 1:1 35 nm 1:1 30 nm 1:1 25 nm 1:1 Photoresist: R&H EUV 1K

33 Summary EUV lithography development in the U.S. is focused on the supporting key infrastructure. Significant infrastructure development is still needed in the source, mask, optics, and resist areas. The Mask Blank Development Center in Albany, NY, has made significant improvements in defect density on EUV mask blanks. The SEMATECH EUV Resist Test Center in Albany is now open to customers A full-field EUVL alpha exposure tool will be delivered to Albany Nanotech in The lack of an EUV resist meeting CD, LER, and sensitivity specs is currently viewed as the most critical issue with the highest risk.

34 Acknowledgements: Dave Attwood, Lawrence Berkeley National Laboratory Sasa Bajt, Lawrence Livermore National Laboratory Vivek Bakshi, SEMATECH Anton Barty, Lawrence Livermore National Laboratory Kim Dean, SEMATECH Ginger Edwards, SEMATECH / Freescale Semiconductor Ken Goldberg, Lawrence Berkeley National Laboratory Long He, SEMATECH / Intel Corporation Mike Johnson, Lawrence Livermore National Laboratory Pat Kearney, SEMATECH Dave Krick, SEMATECH / Intel Corporation Klaus Lowack, SEMATECH / Infineon Tom Lucatorto, NIST Andy Ma, SEMATECH / Intel Corporation Ted Madey, Rutgers University Paul Mirkarimi, Lawrence Livermore National Laboratory Margaret Murnane, University of Colorado Patrick Naulleau, University at Albany Abbas Rastegar, SEMATECH Ira Reiss, Veeco Jorge Rocca, Colorado State University Melissa Shell, Intel Corporation Regina Soufli, Lawrence Livermore National Laboratory Gregg Walraff and Carl Larson, IBM Obert Wood, SEMATECH / AMD