Nanoimprint Lithography and Applications at Hewlett Packard Labs

Transcription

1 Nanoimprint Lithography and pplications at Hewlett Packard Labs Wei Wu Quantum Science Research dvanced Studies HP Labs, Hewlett-Packard

2 Outline Background Motivation Nanoimprint lithography at HP labs pplications based on nanofabrication Molecular memory and logic Nanowire biological sensor Nano-enhanced spectroscopy (unpublished) Future work Summary Feb. 15,

3 Quantum Science Research Part of dvanced studies, HP labs Duty: Exploring the next big thing for HP Built and directed by Dr. R. Stan Williams, HP Senior Fellow 30 people Feb. 15,

4 Nano is Great but New frontier of science o Fundamental knowledge o Convergence of physics, chemistry and biology. Potential commercial impact DN Carbon nanotubes Molecular electronics echnological challenge Lithography! Feb. 15,

5 Next generation lithography (NGL) tools: Extreme UV lithography (EUV) Extremely expensive (complex optical system, expensive and fragile mask) X-ray lithography Expensive light source (synchrotron preferred) Mask material E-beam direct write lithography (EBL) Extremely slow (serial process) E-beam projection lithography (EPL) Mask material Distortion due to heat Feb. 15,

6 Nanoimprint Lithography (NIL) 1. Imprint mold Press Mold resist substrate Remove Mold 2. Pattern ransfer RIE Chou, Krauss, and Renstrom, PL, Vol. 67, 3114 (1995); Science, Vol. 272, 85 (1996) Feb. 15,

7 Nanoimprint Lithography (NIL) High resolution -not limited by wavelength High throughput -parallel process Low cost 10 nm Chou, Krauss, and Renstrom, PL, Vol. 67, 3114 (1995); Science, Vol. 272, 85 (1996) Feb. 15,

8 Step & Flash Imprint UV curable process Room temperature Low pressure UV polymer is applied by droping M. Colburn,. Grot, G. Wilson s et al SPIE 2000 Feb. 15,

9 NIL is on IRS (international technology roadmap for semiconductors) We helped to put NIL on IRS * IRS 2003 update Feb. 15,

10 Major Players Princeton University ---- Nanonex University of axes at ustin ---- Molecular Imprints University of Michigan Hewlett-Packard Motorola Micro resist Europe: achen University. Lund University Obducat, EVG, SUSS Japan: Hitachi Feb. 15,

11 Crossbar Molecular Electronics by NIL

12 What is Next? ENIC - circa 1947 Shrink by 10 8 Improve power efficiency by 10 8 HP Pocket PC Feb. 15,

13 n rchitecture for Molecular Molectronics HPL eramc 1 Hz multi-architecture computer 10 6 gates operating at 10 6 cycle/sec Built from programmable gate arrays (FPG s) Computes with look-up tables Largest defect-tolerant computer 220,000 (3%) defective components circa 1995 Heath, Kuekes, Snider, Williams, Science 280, 1715 (1998) Feb. 15,

14 n rchitecture for Molecular Electronics microprocessor (intel P4) reconfigurable device (FPG) Feb. 15,

15 eramac Crossbar rchitecture Lookup tables ddress lines 0 Memory Data out Switch Data lines Feb. 15,

16 eramac Crossbar rchitecture Lookup tables ddress lines 1 Memory Data out Switch Data lines Feb. 15,

17 Nano-circuit Crossbar rchitecture Electrode s Molecule Memory 0 Switch Y. Chen, G.Y. Jung et al., Nanotech. 14, 462 (2003) eramac crossbar Feb. 15,

18 Crossbar Fabrication: Bottom Electrode Nanoimprint Feb. 15,

19 Crossbar Fabrication: Molecule Deposition H 3 C 26 Å O C OH Langmuir-Blodgett Stearic acid C 18 H 36 O 2 Feb. 15,

20 Crossbar Fabrication: op Electrode Nanoimprint Feb. 15,

21 Crossbar Fabrication: Etch Back Feb. 15,

22 64 bits Cross-bar Memory at 60 nm Half-pitch by hermal Nanoimprint Lithography R (10 9 ohm) H 2-H 3-H 4-H 5-H 6-H 7-H 8-H First working circuit fabricated using NIL First working Molecular memory circuit H P i n v e n t Y. Chen, G.Y. Jung et al., Nanotech. 14, 462 (2003) Feb. 15,

23 34X34 Cross-bar Structure at 50 nm Half-pitch by UV-curable NIL with Dropping Resist G.Y. Jung, S. Ganapathiappan et al. Nano Letter 4 (2004), Feb. 15,

24 Next Goal: 30nm Half-pitch Challenges: Resist stick to the mold Mechanical properties and lift-off properties have to be comprimised Rabbit ears problem Feb. 15,

25 Rabbit ears Problem Metal Deposition Undesirable metal rabbit ears Feb. 15,

26 UV-curable NIL with Double-layer Spin-on Resist 1. Prepare substrate, spin under layer and resist (Nanonex NXR 2010) on 4. Mold and substrate separation 2. lignment UV 5. Residue layer and under layer etching 3. Press and exposure 6. Metal evaporation and lift-off W. Wu, H. Ge, S.Y. Chou et al., EIPBN 2004 Feb. 15,

27 Imprinted 30 nm Half-pitch Nanowires on NIL Resist Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 27

28 Imprinted 30 nm Half-pitch Nanowires Etched into Under-layer Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 28

29 i/pt Nanowires at 30 nm Half-pitch Fabricated Using NIL and Lift-off Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 29

30 Rabbit Ears Solved with Controlled Under-cut Metal Resist Under layer Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 30

31 30 nm Half-pitch 34X34 Crossbar Molecular Memory Fabricated using NIL and Lift-off Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 31

32 30 nm Half-pitch 34X34 Crossbar Molecular Memory Fabricated using NIL and Lift-off Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 32

33 30 nm Half-pitch 34X34 Crossbar Molecular Memory Fabricated using NIL and Lift-off Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 33

34 30 nm Half-pitch 34X34 Crossbar Molecular Memory Fabricated using NIL and Lift-off Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 34

35 30 nm Half-pitch 34X34 Crossbar Molecular Memory Fabricated using NIL and Lift-off 60 nm Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 35

36 1X17 esting Devices rray 40 nm Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 36

37 I-V Curve of Single Device Feb. 15,

38 rray Characterization Setup Vread Read 0V 0V 0V Feb. 15,

39 rray Characterization Setup Program Vprogram or Iprogram 0V Vprogram/2 Vprogram/2 Write with current Erase with voltage Feb. 15,

40 Read, Write and Erase of 1X17 rray 1x17 rray Read Current at 0.5V 1.6E E E out of 17 electrodes good 13/15 devices switch (> 10) 1 minimal (~3x) ll 15 can be erased 0 short 1.0E E-08 Read Current [] x Location Native Written 2u Written 3u Written 5u Erased 1.5V Written 5u 6.0E-08 Native 4.0E-08 Written 2u 2.0E-08 Written 3u Written 5u 0.0E+00 Erased 1.5V Written 5u State Feb. 15, 2005 W. Wu, G-Y Jung, SY Wang, R. S. Williams et al., pplied Physics in press 40

41 Programming Initial state of a subarray fter writing into whole subarray Subarray Initial State fter 2u write into whole subarray -4.00E-10 0.E E-10 1.E-10 Read current [] -3.00E E E E E E E+00 c6 c7 c8 r4 r5 r6 r4 r5 r6 Read current [] 2.E-10 3.E-10 4.E-10 5.E-10 6.E-10 7.E-10 8.E-10 c6 c7 c8 r6 r5 r4 r4 r5 r6 Feb. 15,

42 Crosspoint diode logic array: half-adder DEMUX U V W X Y Z B C D DEMUX E F Y = (U ND V) OR (W ND X) Z = V+ C = V- Feb. 15,

43 Nanowire Biological Sensor

44 Sensor chip structure Zhiyong Li, Yong Chen, Xuema Li, ed Kamins, and Stan Williams Nano Letters, 4(2004), 245 Feb. 15,

45 Covalent attachment of ss-dn on SiNW HS OH OH OH C CC O O P O - O Si MeO OMe OMe NH O HS HS HS S 1.5nm Si Si O O Si O O O O N H O O P O - O CC C HS Si HS Si Si O O O O O Zhiyong Li, Yong Chen, Xuema Li, ed Kamins, and Stan Williams Nano Letters, 4(2004), 245 Feb. 15,

46 DN sensing I I I C C C SiNW C C C p-sinw C C C n-sinw nc-ss-dn C C G G G c-ss-dn G G G c-ss-dn G G G I C C C SiNW I C C C I 25 pm Control p-sinw n-sinw Zhiyong Li, Yong Chen, Xuema Li, ed Kamins, and Stan Williams Nano Letters, 4(2004), 245 Feb. 15, G G G C C C G G G

47 Size matters di/i 0 vs aspect ratio of wires w h w+2h spect ratio = wxh unit: nm -1 Z. Li, X. Li and R. S. Williams et al. pplied physics in press Feb. 15,

48 Future Work: Next Generation Nanoimprint Machine Challenges of NIL: Yield (It will be improved over time.) lignment accuracy is currently 10x worse than resolution -lignment must be achieved without high cost nswer: Next generation nanoimprint machine Feb. 15,

49 Nano Displacement Sensing & Estimation (NDSE) echnology (HL/ Precision Imaging Program) Used in HP large format printers otal cost of optics: $60 1/50 pixel size displacement detection J. Gao, C. Picciotto, E. Hoarau, W. Jackson and W. Wu NN 2004 and pplied physics in press Feb. 15,

50 5 nm Displacement sensing using NDSE J. Gao, C. Picciotto, E. Hoarau, W. Jackson and W. Wu NN 2004 and pplied physics in press Feb. 15,

51 Next Generation Nanoimprint Machine Nanoimprint Feb. 15,

52 Summary HP is one of the earliest company/university to investigate NIL. QSR of HP labs is the first group made working circuit using NIL. Crossbar molecular memory with record density of 28 Gb/cm 2 (30 nm half pitch) were fabricated using NIL. NIL is capable of making real applications. hree generations of nanoimprinters were built by QSR. Fast and low-cost mold duplication process was developed to lower the cost of NIL further. Next generation nanoimprinter will integrate NIL and HP s precision imaging technology. Feb. 15,

53 cknowledgement My colleagues and collaborators Supported in part by DRP IEEE SF Bay rea Nanotechnology Council You Feb. 15,

54 Feb. 15,