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1 Providing Engineered Interconnect and Thin-Film Solutions Since 1995 ISSUE

2 Introduction Our goal at Applied Thin-Film Products (ATP) is to constantly evolve our processing and material capabilities to reflect our customers changing needs. Our state-of-the-art thin-film facility was founded in 1995 in the heart of Silicon Valley specifically for this purpose. ATP s experienced personnel and representatives possess motivation and integrity, which is reflected by the reputation we enjoy in the military, wireless, fiber-optic and medical life science marketplace. In order to accommodate a growing global market, ATP expanded our manufacturing capacity in 2010 with the addition of a second facility located at 3620 Yale Way, Fremont, CA. This location is adjacent to the original existing building. Our Shanghai, China facility greatly enhances our operations for commercial manufacturing and assembly operations in the Pacific Rim. ATP offers build-to-print services for a wide range of materials and metallization schemes. ATP fabricates circuits on substrates using As-Fired Alumina, Polished Alumina, Superstrate TPS, Aluminum Nitride, Beryllium Oxide, Fused Silica/Quartz, Sapphire and Hi-K Dielectrics. Metallizations range from standard films to Aluminum, Chrome, Copper, Nickel, Gold, Palladium, Platinum, Titanium and Titanium Tungsten. Circuit features can include fine pitch conductors, integrated resistors, vias, wrap-arounds, double sided patterning, polyimide supported bridges, hollow plated vias and solid filled vias. Thin-Film Fabrication Technology Complete In-House Thin-Film Circuit Fabrication Service Pattern Generated Photomasks In-House Resistor Laser Trimming and CO2 Laser Drilling Multiple Sputtering Systems and Plating Capabilities Air Bridges/Crossovers with Polyimide and Solder Dams Wide Selection of Materials and Metallizations Hollow Plated and Solid Filled Via Capabilities AI203, AIN, BeO, Fused Silica/Quartz, Sapphire and Hi-K Dielectrics Multiple Part Number Array (Pizza Array) Capability Quick Turn Engineering Prototypes Predeposited Gold/Tin (Au/Sn) High-Rel Screening: Bond Pull, Die Shear, Temp Shock, Temp Cycle, Burn In per MIL-PRF AS9100 Rev C Certified and ISO 9001:2008 Certified ITAR Registered as a defense contractor with the United States Department of State, Office of Defense Trade Controls and Compliance ATP complies with the U.S. Dodd-Frank Wall Street Reform and Consumer Protection Act concerning conflict minerals originating from the Democratic Republic of the Congo (DRC) or adjoining countries. A copy of the current CFSI Declaration can be supplied to customers upon request. 2 w w w. t h i n f i l m. c o m

3 Contents Quality Assurance System...4 Photo Mask, Computer-Aided Design (CAD) and Data Conversion Requirements...5 Substrate Types and Specifications...6 Material Specifications...7 Laser Machining/Drilling...8 Standard Metallizations...9 Thermal Performance of Tantalum Nitride Films* Tantalum Nitride Resistor Aging Equation Integrated TaN Resistors Laser Resistor Trimming Polyimide Supported Bridges Polyimide Properties Solder Dams Gold Bumping Edge Wraps Inductor Coils Laser Diode Submounts (Au/Sn) Via Hole Technology Safe Current Limits in Thin Film Gold and Copper Microstrip Transmission Lines Stand Off/Isolation Pads ATP Bond Qualification Coupons Packaging/Chip Trays Fractal Fasten Standard Dimensions and Tolerances Samples Serialization Conversion and Properties Tables Thermal Conductivity Temperature Conversion Gold Conversion Solders Material Properties Copper Thickness Conversion Other Conversions Disclaimer ATP has made every effort to have this information as accurate as possible. However no responsibility is assumed by ATP for its use, nor for any infringements of rights of third parties which may result from its use. ATP reserves the right to revise the content or modify its product without prior notice. w w w. t h i n f i l m. c o m 3

4 Quality Assurance System It is our policy at ATP to provide our customers with high performance material. We measure our external success through achievement in the following areas: Business improvements in customer and supplier partnerships, training and resource allocation Process capability improvements for our products and processes Yield improvements On-time delivery Lot traceability available on all material and metallizations Our Quality practices are based on the following: Quality Manual # QMS AS9100 Rev C Certified ISO9001: 2008 Certified MIL-I-45208A Screening per MIL-PRF-38534, Appendix C, Table C-V when requested Burn In Temperature Cycling Bond Pull Testing Die Shear Testing Solderability Testing 100% visual inspection to meet and/or exceed MIL-STD-883, Method 2032 requirements 100% inspection of incoming raw material Class H and K inspection First Article Inspection (FAI) ATP Standard Inspection Criteria and customer inspection criteria is accepted NIST calibration of measuring equipment and maintenance program Temp Cycle/Shock Chamber Bond Pull Die Shear 4 w w w. t h i n f i l m. c o m

5 Photo Mask, Computer-Aided Design (CAD) and Data Conversion Requirements ATP has four Electro-Mask/T.R.E./ASET, two of which are Criss Cross Systems with Pattern Generators and Image Repeaters. Each system is fully self-contained in a class 100 environmentally controlled chamber. ATP is the only manufacturer in the United States that offers this combination of in-house mask making and substrate manufacturing. In order to guarantee the highest quality circuits, ATP generates hard surface Photomasks produced on Precision Pattern Generated Equipment. ATP s masks are all fabricated to precise tolerances, whether they are for engineering or manufacturing requirements. While Mylar or Emulsion films can be used to make thin-film circuits, they can often compromise the results. ATP has extensively invested in this capability to allow us to quickly and cost-effectively produce high quality glass masks to meet our customers needs. Quick turn and pizza array (multi-part) engineering photomasks available. Pattern Generator/Stepper ATP can generate Photomasks from the following formats: AutoCAD.DWG or.dxf files Gerber photo plotter data GDSII files Dimensioned drawings Electromask data Rubylith artwork SolidWorks ATP has a talented team of CAD professionals who will convert all of your formats. Our CAD professionals are willing to lay out all of your engineering and prototype arrays. This will allow you to spend more time on designs, not the layouts. ATP routinely produces images in Chrome and Iron Oxide on high-quality soda lime glass. In addition, we have expertise in imaging on Photographic Emulsion. If you have an internal lab, let ATP create masks for you. CAD Services We commonly stock 3"x3" (76.2mm x 76.2mm), 4"x4" (101.6mm x 101.6mm), 5"x5" (127.0mm x 127.0mm), 6"x6" (152.4mm x 152.4mm) and 8"x8" (203.2mm x 203.2mm) Soda Lime Glass. w w w. t h i n f i l m. c o m 5

6 Substrate Types and Specifications Substrate Types A Surface (CLA) B Surface (CLA) Asfired Alumina (Al2O3) 99.6% < 3µ" (76nm) < 4µ" (100nm) Polished Alumina (Al2O3) 99.6% < 1.0µ" (25nm) < 1.0µ" (25nm) Aluminum Nitride (AlN) < 4.0µ" (100nm) < 4.0µ" (100nm) Beryllium Oxide (BeO) < 4.0µ" (100nm) < 4.0µ" (100nm) Fused Silica, Quartz (SiO2), Z-Cut Quartz 60/40 optical polish 60/40 optical polish Sapphire (a/c plane-al2o3) < 1.0µ" (25nm) < 1.0µ" (25nm) Ferrites and Garnets < 16.0µ" (406nm) < 16.0µ" (406nm) Polished Titanates < 4µ" (100nm) < 4µ" (100nm) Material Thicknesses and Tolerances available and in stock. Other materials and thicknesses are available upon request. Please contact our sales department for more information. Some materials may only be available in certain panel sizes and may not represent large volume pricing. Alumina Asfired (Al2O3) 99.6% 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.001" ( mm) 0.012" (0.305mm) ±0.001" ( mm) 0.015" (0.381mm) ±0.001" ( mm) 0.020" (0.508mm) ±0.001" ( mm) 0.025" (0.635mm) ±0.001" ( mm) 0.030" (0.762mm) ±0.002" ( mm) 0.040" (1.016mm) ±0.002" ( mm) 0.050" (1.270mm) ±0.003" ( mm) Alumina Polished (Al2O3) 99.6% 0.003" (0.076mm) ±0.0005" (0.0127mm) 0.004" (0.101mm) ±0.0005" (0.0127mm) 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.006" (0.152mm) ±0.0005" (0.0127mm) 0.007" (0.178mm) ±0.0005" (0.0127mm) 0.008" (0.203mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.0005" (0.0127mm) 0.015" (0.381mm) ±0.0005" (0.0127mm) 0.020" (0.508mm) ±0.0005" (0.0127mm) 0.025" (0.635mm) ±0.0005" (0.0127mm) 0.030" (0.762mm) ±0.0005" (0.0127mm) 0.031" (0.787mm) ±0.0005" (0.0127mm) 0.035" (0.889mm) ±0.0005" (0.0127mm) 0.040" (1.016mm) ±0.0005" (0.0127mm) 0.042" (1.067mm) ±0.0005" (0.0127mm) 0.045" (1.143mm) ±0.0005" (0.0127mm) " (1.25mm) ±0.0005" (0.0127mm) 0.050" (1.270mm) ±0.0005" (0.0127mm) " (1.30mm) ±0.0005" (0.0127mm) 0.060" (1.524mm) ±0.0005" (0.0127mm) Sapphire (a/c plane-al2o3) 0.005" (0.127mm) ±0.0005" (0.0127mm) [a] 0.010" (0.254mm) ±0.0005" (0.0127mm) [c] 0.015" (0.381mm) ±0.0005" (0.0127mm) [c] 0.025" (0.635mm) ±0.0005" (0.0127mm) [c] Ferrites and Garnets Ask Sales Department for more information. Fused Silica, Quartz (SiO2) 0.003" (0.076mm) ±0.0005" (0.0127mm) 0.004" (0.101mm) ±0.0005" (0.0127mm) 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.007" (0.178mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.0005" (0.0127mm) 0.015" (0.381mm) ±0.0005" (0.0127mm) 0.018" (0.457mm) ±0.0005" (0.0127mm) 0.020" (0.508mm) ±0.0005" (0.0127mm) 0.025" (0.635mm) ±0.0005" (0.0127mm) 0.030" (0.762mm) ±0.001" (0.0254mm) 0.040" (1.016mm) ±0.001" (0.0254mm) 0.048" (1.219mm) ±0.001" (0.0254mm) 0.060" (1.524mm) ±0.001" (0.0254mm) 0.075" (1.905mm) ±0.001" (0.0254mm) Beryllium Oxide (BeO) 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.0005" (0.0127mm) 0.015" (0.381mm) ±0.0005" (0.0127mm) 0.020" (0.508mm) ±0.0005" (0.0127mm) 0.025" (0.635mm) ±0.0005" (0.0127mm) 0.030" (0.762mm) ±0.0005" (0.0127mm) 0.060" (1.524mm) ±0.001" (0.0254mm) 0.085" (2.159mm) ±0.001" (0.0254mm) 0.125" (3.175mm) ±0.001" (0.0254mm) Hi-K Dielectric TD-36 Zirconium Tin Titanate 0.010" (0.254mm) ±0.001" (0.0254mm) 0.015" (0.381mm) ±0.001" (0.0254mm) M38 and M " (0.127mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.001" (0.0254mm) 0.015" (0.381mm) ±0.001" (0.0254mm) Z-Cut Quartz (SiO2) 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.0005" (0.0127mm) 0.015" (0.381mm) ±0.0005" (0.0127mm) Aluminum Nitride (AlN) 0.004" (0.101mm) ±0.0005" (0.0127mm) 0.005" (0.127mm) ±0.0005" (0.0127mm) 0.006" (0.152mm) ±0.0005" (0.0127mm) " (0.180mm) ±0.0005" (0.0127mm) 0.008" (0.203mm) ±0.0005" (0.0127mm) 0.009" (0.229mm) ±0.0005" (0.0127mm) 0.010" (0.254mm) ±0.0005" (0.0127mm) 0.014" (0.356mm) ±0.0005" (0.0127mm) 0.015" (0.381mm) ±0.0005" (0.0127mm) " (0.394mm) ±0.0005" (0.0127mm) 0.017" (0.432mm) ±0.0005" (0.0127mm) 0.018" (0.457mm) ±0.0005" (0.0127mm) 0.020" (0.508mm) ±0.0005" (0.0127mm) 0.025" (0.635mm) ±0.0005" (0.0127mm) " (0.699mm) ±0.0005" (0.0127mm) 0.030" (0.762mm) ±0.0005" (0.0127mm) 0.031" (0.787mm) ±0.0005" (0.0127mm) 0.035" (0.889mm) ±0.0005" (0.0127mm) " (0.919mm) ±0.0005" (0.0127mm) 0.040" (1.016mm) ±0.0005" (0.0127mm) " (1.189mm) ±0.0005" (0.0127mm) " (1.199mm) ±0.0005" (0.0127mm) " (1.250mm) ±0.0005" (0.0127mm) 0.050" (1.270mm) ±0.0005" (0.0127mm) " (1.298mm) ±0.0005" (0.0127mm) " (1.300mm) ±0.0005" (0.0127mm) 0.053" (1.346mm) ±0.0005" (0.0127mm) " (1.450mm) ±0.0005" (0.0127mm) " (1.476mm) ±0.0005" (0.0127mm) " (1.508mm) ±0.0005" (0.0127mm) 0.060" (1.524mm) ±0.0005" (0.0127mm) 0.065" (1.651mm) ±0.0005" (0.0127mm) 0.069" (1.753mm) ±0.0005" (0.0127mm) 0.080" (2.032mm) ±0.0005" (0.0127mm) 0.084" (2.134mm) ±0.0005" (0.0127mm) 0.085" (2.159mm) ±0.0005" (0.0127mm) 0.090" (2.286mm) ±0.0005" (0.0127mm) 6 w w w. t h i n f i l m. c o m

7 Material Specifications Specifications are offered as an assistance to engineers and purchasing professionals in the design and procurement of thin-film circuit substrates. Properties Polished High Density 996 Aluminum Oxide Asfired Superstrate 996 Aluminum Oxide Superstrate TPS Beryllium Oxide Aluminum Nitride Fused Silica Quartz Sapphire (Crystalline) Polished Titanates Chemical Al2O3 Al2O3 Al2O3 BeO AlN SiO2 A/C plane Al2O3 Composition Purity 99.6% 99.6% 99.6% 99.5% 98% 100% 100% Color White White White White Tan Transparent Transparent Cream Gray Nominal Density 3.87g/cm g/cm g/cm g/cm g/cm 3 2.2g/cm g/cm 3 Surface Finish (Polished) CLA Surface Finish (Asfired) CLA < 1.0µ" (25nm) n/a 3 4µ" ( nm) n/a < 1.0µ" (25nm) µ" (50 100nm) < 2.0µ" (50nm) 60/40 Optical < 1.0µ" (25nm) CLA < 3.0µ" (76nm) n/a n/a n/a n/a n/a n/a n/a Ferrites & Garnets < 16.0µ" (400nm) Camber " 0.002" n/a " " " " 0.002" 0.002" Camber 76nm / 152nm mm n/a 76nm / 152nm 76nm / 152nm 76nm / 152nm 76nm / 152nm mm mm Thickness " ( mm) Thickness Tolerance Process Sizes (L&W) Coefficient of Thermal Expansion (CTE) Thermal Conductivity Dielectric Constant (k) Dissipation Factor (Loss Tangent) Dissipation Factor (Loss Tangent) ±0.0005" (±0.0127mm) " ( mm) x 10 6 ( C) "* ( mm) ±0.001" (±0.0254mm) " ( mm) x 10 6 ( C) n/a "* ( mm) n/a ±0.0005" (±0.0127mm) n/a " ( mm) 8.2 x x 10 6 ( C) ( C) " ( mm) ±0.0005" (±0.0127mm) " ( mm) 4.6 x 10 6 ( C) "* ( mm) ±0.0005" (±0.0127mm) " ( mm) 0.55 x 10 6 ( C) "* ( mm) ±0.0005" (±0.0127mm) " ( mm) A 25 C Watts/m K 26.9 Watts/m K 35 Watts/m K 270 Watts/m K 170 Watts/m K n/a Watts/m K n/a Watts/m K "* ( mm) ±0.0005" (±0.0127mm) " ( mm) " ( mm) ±0.0005" (±0.0127mm) " ( mm) 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 36 1 MHz MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 10 GHz 10 GHz 10 GHz 1 MHz Q 1 GHz 1 GHz 1 GHz 1 GHz Hardness n/a 7 Mohs 1800/2200A Knoop (Rockwell) Flexural Strength 90 x 10 3 K lbs/in 2 90 x 10 3 K lbs/in 2 99 x 10 3 K lbs/in 2 35 x 10 3 K lbs/in 2 59 x 10 3 K lbs/in 2 25 x 10 3 K lbs/in 2 60 x 10 3 K lbs/in 2 (3 pt. bend) (4 pt. bend) Compressive 54 x 10 3 M lbs/in 2 54 x 10 3 M lbs/in 2 n/a n/a n/a 161 x 10 3 M lbs/in x 10 3 M lbs/in 2 Strength Grain Size < 1.0µm < 1.0µm < 1.0µm 9 16µm 5 7µm Amorphous single crystal * Additional thicknesses and tolerances available upon request. Value varies with orientation ( A plane / C plane) w w w. t h i n f i l m. c o m 7

8 Laser Machining/Drilling Our computer-controlled CO2 lasers can create features of virtually any planar shape and can deliver positional accuracies of 0.001" (0.0254mm) or better over areas as large as 8"x 8" (203.2mm x 203.2mm). The laser is extremely flexible and permits close location of features with considerable layout flexibility. Types of Ceramic Materials Materials covered include Alumina, Beryllium Oxide, Aluminum Nitride, Ferrite and Fused Silica/Quartz. Machined Features/Special Shapes Virtually any planar shape can be cut in ceramic substrates. These shapes include circles, curves, rectangles, polygons, rounded thin slots, etc. Since ceramics are strong but brittle, the designer should consider a radius as large as practical on the inside corners. All inside corners will need to have a minimum of 0.003" (0.0762mm) radius due to the laser beam diameter. Rounding inside corners can reduce chipping and cracking. Laser machining next to conductor lines should be pulled back from edge by 0.001" or mm minimum. Dual Beam CO2 Lasers Backside Burnishing Treatment ATP continues to offer a backside burnishing treatment that will minimize burrs, tails and post laser slags on the backside of substrates. This treatment can be used when laser cutting through gold on backsides of substrates. This cost effective process could also improve adhesion and eliminate the need for customers to roughen up the surface of the components themselves before epoxy bonding. Backside burnishing treatment should not be confused with ATP s Fractal Fasten technology, see Fractal Fasten technology page. Please contact ATP Sales for further information on the Backside Burnishing Treatment. Handling and Cleaning Laser protective coating is applied to protect material surface finishes and parts during the laser process. Laser protective coating also guards against adhesion of slag to material surfaces. Slag buildup is primarily found on the beam exit side of the substrate and is removed after laser processing. Tolerances for Machining/Drilling The tolerances provided below will generally produce the most cost effective laser processing. Tighter tolerances can be achieved at an increase in cost and lead-time. Spacing between via holes should be a minimum of one via diameter. Typical laser diameter is " (0.095mm). Annealing High temperature annealing for Alumina-based substrates is also offered. This can increase ceramic flexural strength, improve adhesion and reduce internal stresses. Substrate Thickness Typical Taper Typical Diameter Typical Diameter Tolerance 0.003" (0.0762mm) " (0.0190mm) ± " (0.0190mm) 0.004" (0.101mm) 0.004" (0.101mm) " (0.0190mm) ± " (0.0190mm) 0.004" (0.101mm) 0.005" (0.127mm) 0.001" (0.0254mm) ±0.001" (0.0254mm) 0.005" (0.127mm) 0.010" (0.254mm) 0.001" (0.0254mm) ±0.001" (0.0254mm) 0.010" (0.254mm) 0.015" (0.381mm) " (0.0381mm) ±0.0015" (0.0381mm) 0.015" (0.381mm) 0.020" (0.508mm) 0.002" (0.0508mm) ±0.002" (0.0508mm) 0.020" (0.508mm) 0.025" (0.635mm) " (0.0635mm) ±0.0025" (0.0635mm) 0.025" (0.635mm) Other taper and diameter tolerances available upon request. Please contact our sales department for more information. 8 w w w. t h i n f i l m. c o m

9 Standard Metallizations Sputtering is commonly used because the adhesion of deposited metals is excellent. The basic bondable metallization scheme for thin-film substrates contains TiW as the adhesion layer and Au as the conductor layer (TiW/Au). When resistors are required Tantalum Nitride is added (TaN/TiW/Au). TaN is available from 10 to 200 ohms/square sheet resistivities. Multi-ohms per square films are also available on single circuit designs. Solderable metallization shemes are also available by adding Ni and/or Cu to these films (TiW/Au/Cu/Ni/Au). Bondable and solderable metallization schemes can be achieved on a single design. Palladium can also be added as a solderable film when using high-temperature eutectics. Many different combinations are available for your design. Please consult with our sales department for more information. Metal stack Max exposure Temp C Solderable Wire Bondable Braze-able Au/Sn or Au/Ge Pb/Sn or Sn/Cu >120µ" Au Au/Si TiW/Au 450 Yes Not Recommended Yes Run Out issue TaN/TiW/Au 450 Yes Not Recommended Yes Run Out issue TiW/Pd/Au 450 Yes Yes Yes Yes TaN/TiW/Pd/Au 450 Yes Yes Yes Yes TiW/Ni/Au 425* Yes Yes Yes Yes TaN/TiW/Ni/Au 425* Yes Yes Not Recommended Yes TiW/Au/Cu/Ni/Au 425* Yes Yes Yes Yes TaN/TiW/Au/Cu/Ni/Au 425* Yes Yes Yes Yes TiW/Au/Ni/Au 425* Yes Yes Yes Yes *Limited time Note: Pb/Sn solderable and wire bondable on the same circuit can be achieved with special processes. w w w. t h i n f i l m. c o m 9

10 Standard Metallizations (Continued) Metallizations Offered Al = µ" ( µm) Ti = Å ( µm) TiW 90/10 = Å ( µm) Cu = µ" ( µm) Cr = Å ( µm) TaN = ohms/square are available ohms/square standard. Typical TCR = -100 ±50ppm/ C Ni Pd Pt Au Au/Sn = 1,000 10,000Å ( µm) = 1,000 10,000Å ( µm) = 1,000 10,000Å ( µm) = µ" ( µm) = µ" ( µm) Other metallizations and thicknesses are available. Please contact our sales department for information. Plated Sputtered SEM Profile Metal Stack Layers TiW/Au or TaN/TiW/Au Typical Applications Advantages Disadvantages Pb/Sn Solderability Allowble Die Attach Method Bondable Gold Conductor and resistor applications that require traditional processing Cost effective standard assembly practices; can integrate TaN into the film; bondable Not Pb/Sn compatible Poor Typical TCR -100 ±50ppm/ C Recommended Front Side Metal Backside Metal Epoxies; Au/Ge eutectic; Au/Si eutectic; Au/Sn eutectic Sputtered ohms/sq TaN if resistors are required Sputtered TiW: Å ( µm) Sputtered Au: 20µ" 200µ", typical = 120µ" (0.5 5µm, typical = 3µm) Plated Au: 20µ" 500µ", typical = 120µ" ( µm, typical = 3µm) Same as front side without the TaN layer TiW/Pd/Au or TaN/TiW/Pd/Au Bondable Gold and Best Au/Si Eutectic Attach Typical Applications Conductor - resistor applications that allow bonding and soldering Advantages Best for Au/Si assemblies and limited eutectic leaching; can integrate TaN into the film Au/Si Solderability Best Pb/Sn Solderability Good Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn Typical TCR -100 ±50ppm/ C Recommended Front Side Metal Sputtered ohms/sq TaN if resistors are required Sputtered TiW: Å ( µm) Sputtered Au: 20µ" 200µ", typical = 120µ" (0.5 5µm, typical = 3µm) Plated Au: 20µ" 500µ", typical = 120µ" ( µm, typical = 3µm) Backside Metal Same as front side without the TaN layer 10 w w w. t h i n f i l m. c o m

11 Standard Metallizations (Continued) TiW/Ni/Au or TaN/TiW/Ni/Au Typical Applications Advantages Bondable (TiW/Ni/Au only) or Solderable Gold (TiW/Ni/Au and TaN/TiW/Ni/Au) Conductor applications that require Pb/Sn soldering Solderable for Pb/Sn assemblies; can be bondable as long as TaN is not present Disadvantages Wire bonding problems may be experienced due to Ni-Au diffusion when devices processed > 300 C; TaN is not recommended due to processing Ni-Au diffusion > 300 C Pb/Sn Solderability Best for Pb/Sn assemblies Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn Typical TCR -100 ±50ppm/ C Recommended Front Side Metal TaN is not recommended due to passivation above > 300 C, Ni diffusion Sputtered TiW: Å ( µm) Sputtered Ni: Å ( µm) Sputtered Au: 20µ" 40µ" ( µm) for solderable thin gold Plated Au: µ" ( µm) for bondable thicker gold Backside Metal Same as front side without the TaN layer TiW/Au/Cu/Ni/Au or TaN/TiW/Au/Cu/Ni/Au Solderable/Bondable Gold Typical Applications Conductor-resistor applications with high conductivity film that requires Pb/Sn soldering Advantages High conductivity film; can integrate TaN into the film; Solderable Gold/Bondable Gold can be achieved on the same ciruit Pb/Sn Solderability Best Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn Typical TCR -100 ±50ppm/ C Front Side Metal Sputtered ohms/sq TaN if resistors are required Sputtered TiW: Å ( µm) Sputtered Au: 20 40µ" ( µm) Electroplated Cu: 20 1,000µ" ( µm) Electroplated Ni: µ" ( µm) Electroplated Au: µ" ( µm) for solderable use thin gold, for bondable use thick gold Backside Metal Same as front side without the TaN layer TiW/Au/Ni/Au or TaN/TiW/Au/Ni/Au Solderable/Bondable Gold Typical Applications Conductor-resistor applications that require Pb/Sn soldering Advantages Best for Pb/Sn assemblies; can integrate TaN into the film; Solderable Gold/Bondable Gold can be achieved on the same ciruit Pb/Sn Solderability Best Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn Typical TCR -100 ±50ppm/ C Front Side Metal Sputtered ohms/sq TaN if resistors are required Sputtered TiW: Ansgtroms Sputtered Au: 20µ" 40µ" ( µm) Electroplated Ni: µ" ( µm) Electroplated Au: µ" ( µm) for solderable use thin gold, for bondable use thick gold Backside Metal Same as front side without the TaN layer w w w. t h i n f i l m. c o m 11

12 Thermal Performance of Tantalum Nitride Films* Figure 1 illustrates the temperature distribution for a 15 mil (0.0381cm) square Tantalum Nitride resistor with a power density of 2,000 W/in 2 (310W/cm 2 ) and a heatsink temperature of 85 C. The plot shows how heat spreads from the resistor through the 15 mil (0.0381cm) thick Alumina substrate and into the 25 mil (0.0635cm) thick Kovar carrier. Figure 2 shows the surface temperature distribution for the same resistor of Figure 1, again with a power density of 2,000 W/in 2 (310W/cm 2 ). Notice that the temperature within the resistor varies from C at the center (Tmax) to 96 C at the resistor corners. From accelerated tests, the hottest spot degrades first " (0.381mm) C Use Tmax to calculate MTTF for a thin-film resistor Figure 3 is a plot of Tmax versus the length of square resistors on a 15 mil thick Alumina substrate. Power density is 2,000 W/in 2 (310W/cm 2 ) and the heatsink temperature is 85 C. Figure 1: Surface temperature distribution through Alumina substrate Two different carrier materials are considered: Kovar and W:Cu. Also shown is the Thick Substrate Approximation (The Alumina substrate is made so thick compared with the resistor size that the thermal spreading resistance into the substrate dominates the overall thermal resistance.) Several important conclusions about thermal design of thin-film resistors can be drawn from Figure 3: Imposing an arbitrary cap on the resistor s power density (W/in 2 or W/cm 2 ) is too restrictive. A thermal analysis based on the physics of heat flow is required for a sensible estimate of MTTF (For instance, power density in the 5 mil square resistor could safely be raised to 15,000 W/in 2 or 2325 W/cm 2 ). For fixed power density (W/in 2 or W/cm 2 ), smaller resistors have lower Tmax. When the square resistor length exceeds the substrate thickness, choice of carrier material becomes important. For the W:Cu carrier, Tmax increases more slowly than linear. The Thick Substrate Approximation may be much too pessimistic for high-power resistors. * To be used as reference only. Calculations based on square resistors on listed material. Other resistor designs and materials may have different results, such as fused silica/quartz may act as an insulator and may not be recommended for this type of application. Please contact ATP with your requirement and application. Temperature C Tmax in Square Thin-Film Resistors vs. Resistor Size 15 mil (0.0381cm) Thick Alumina Substrate/25 mil (0.0635cm) Thick Carrier/2000W/in 2 (310W/cm 2 ) 0.005" (0.0127cm) 0.010" (0.0254cm) Figure 2: Surface temperature distribution across a square resistor 0.015" (0.0381cm) Figure " (0.0508cm) Square Resistor Size Thk-Sub Approx Kovar Carrier W:Cu Carrier 0.025" (0.0635cm) 0.030" (0.0762cm) C Gold pads 12 w w w. t h i n f i l m. c o m

13 Tantalum Nitride Resistor Aging Equation Definitions T operating temperature of resistor C t time resistor is at temperature T hours Ro initial resistor value Ohms R increase in resistance after resistor at temperature, T, for time, t. Ohms T( K) = T( C) Aging Equation R/Ro = A t n exp[ To/T( K)] % where, A = n = To = 15,087 K. Thermal Performance The Thermal Performance section on the ATP Website discusses the calculation of a resistor s operating temperature. Figure 3 shows Tmax for square resistors operating with 2,000 W/in 2 (310 W/cm 2 ) and 85 C heatsink temperature. Example The 5 mil (0.127 mm) square resistor in Figure 3 has P = 50 mw and Tmax = 92.2 C. Assume MTTF = hours. How much will the value of the resistor increase in 10 8 hours of operation with 50 mw of dissipation? From the Aging Equation: R/Ro = 0.13%, is this increase in resistance acceptable? A sensitivity analysis of the circuit s operation must be done to answer that question. Reference Brady, et.al., Thermal Oxidation and Resistivity of Tantalum Nitride Films, Thin Solid Films 66 (1980), pp Resistor Stabilization Temperature Coefficient of Resistance (TCR) TCR = (R2 R1) R1(T2 T1) 10 6 ppm/ C Where: R2 = final resistance (Ω) R1 = initial resistance (Ω) T2 = final temperature ( C) T1 = initial temperature ( C) Example: 50 ohm resistor at 25 C which drifts to 49.5 Q at 125 C has a TCR of: TCR = ( ) 50(125 25) 10 6 = 100 ppm/ C The TCR of Tantalum-Nitride is typically measured within a range from 25 to 150 ppm/ C. Reference MIL-PRF-38534H Appendix C b Power Dissipation Resistor film temperature is the critical parameter in determining the failure point of a resistor. This operating temperature is affected by resistor geometry, total circuit power dissipation, proximity to other dissipative elements, type of substrate material and the heatsinking used. A complete thermal analysis is required to precisely determine the resistor temperature Tmax. The maximum allowable power dissipation for the circuit s critical resistor depends on the system s design lifetime (MTBF), the maximum acceptable increase in resistance over the system s lifetime and other factors that might affect the critical resistor s operating temperature such as duty cycle and average heatsink temperature. Typical CW applications indicate a resistor temperature in the 100 C to 125 C range. Note that for every 10 C rise in resistor temperature over 100 C, resistor stability degrades by a factor of 2.8 in oxygen and does not apply to resistors in sealed nitrogen environments. Specifically, a resistor value which drifts by 0.5% at 100 C will drift as much as 1.4% if operated at 110 C. An important point to be made, however, is that this value applies in an air environment because of continued oxide growth into the resistor film. w w w. t h i n f i l m. c o m 13

14 Integrated TaN Resistors ATP offers a wide variety of TaN sheet resistivities from ohms/square. Our standard and most cost effective sheet resistivities are 50, 75, and 100 ohms/square. Resistor tolerances are available depending on material surface finishes and resistor design layout. Tolerances for thermal stabilization (heat treat) will be dependent upon the resistor values, resistor sizes, and number of resistors in the design. ATP does offer laser trimming to tolerances as low as ±0.5% if required. Keep in mind that the smaller the resistor, the higher the difficulty to achieve tighter tolerances due to the area and the size of the beam. A small area of trimming can change the resistor value dramatically. With laser trimming, additional tooling 1and time will be required. Basic equation for calculating resistance The resistance of a specific resistor depends on its aspect ratio (the ratio of its length to width) expressed as a number of squares (note: the term square is dimensionless). R = s(l/w) Where: R = resistance in ohms s = sheet resistance in ohms/sq L = Length of the resistor W = width of the resistor Resistor length is always the dimension of the resistor parallel to the current flow. The resistor square in the corner area of a bent style resistor should be counted as 0.53 the value of the sheet resistance w w w. t h i n f i l m. c o m

15 Integrated TaN Resistors (Continued) Resistor Types Square or Rectangular Configuration: The most common type of resistor. Min. pad size 0.002" (0.0508mm) L or Bent Configuration: The resistor square in the corner area(s) of a bent style resistor (e.g. an L shape or serpentine design) should be counted as 0.53 the value of the sheet resistance. Min. notch indent 0.001" (0.0254mm) S Configuration: This type of resistor is also offered by ATP on some complex designs. Note that resistor tolerances may be difficult to achieve. The resistor can be heat treated on best effort. If laser trimming is required for tighter tolerances, the design may have to be adjusted. Inquire with ATP Sales for more information. Min. resistor width 0.001" (0.0254mm) Serpentine Configuration: This resistor is typically used for high value resistors. The number of corners complicates calculation of the value. The resistor square in the corner areas of a serpentine style resistor should be counted as 0.53 the value of the sheet resistance. Top-hat (lobe type) Configuration: The advantage of a top hat design is its wide trim range. Here we have a five square resistor. By trimming with a single plunge cut of the laser, a nine square resistor can be created. The resistance can be manipulated between these values by limiting the amount of trim. Resistors with a trimmable range of more than 3x the initial value can be created using this technique. Resistors of this type must be trimmed regardless of tolerance requirements. This type of design can also offer better tolerance accuracy down to ±0.5%. This design will also require larger pad sizes. Recommend or mm as a minimum Best for resistors with tolerances < 1% w w w. t h i n f i l m. c o m 15

16 Laser Resistor Trimming With laser trimmed resistors ATP can achieve tolerance of ±0.5% depending on design and material. Polished material is recommended when tighter tolerances are needed. Most laser trim types can achieve the ±1.0% without difficulty as long as the TaN area is large enough. See Recommended Minimum Trimmable TaN Area chart. Below are listed all the different types of resistors that can achieve these types of tolerances. Tolerances Recommended Trim Type Recommended Minimal Trimmable TaN Area Resistors with ±0.05% Top Hat, Scan 0.008" 0.008"(0.200mm 0.200mm) Resistors with ±1% Top Hat, Scan 0.004" 0.004"(0.100mm 0.100mm) Resistors with ±2% Top Hat, Scan 0.003" 0.003"(0.076mm 0.076mm) Resistors with ±5% Top Hat, Scan, L Cut, Plunge Cut 0.003" 0.003"(0.076mm 0.076mm) Laser beam spot trim typical size is 0.001" (0.0254mm). Laser Trim Types Plunge Cut: The most economical laser trim type. This is primarily due to the minimum amount of time required to trim the resistor with this technique. Overall tolerance accuracy can be less than the other methods. This method is recommended for DC applications. L Cut: This method offers increased tolerance accuracy over the Plunge Cut. Due to longer time required to perform this cut, it is slightly more expensive. This method is recommended for DC applications. Serpentine Cut: This trim type allows wider final value flexibility than the Plunge or L Cut. However, due to the increased number of cuts per resistor required, the price can increase substantially. This method is recommended for DC applications. Scan Cut: This method offers both high accuracy and high frequency compatibility. The resistor material is typically removed from each edge of the resistor equally. This technique typically requires considerably more time per resistor than the other trim types. It is also more expensive. This method is recommended for all applications. For more information on resistor trimming, please request document #DG50020 Design For Manufacturability. Resitor Trim Type Recommended Application Advantages Disadvantages Plunge Cut DC Minimum cost. Typically applicable only for DC applications. Limited tolerance capability. L Cut DC Increased Accuracy Lower tolerances Typically applicable only for DC applications. Slightly higher cost than Plunge cut. Serpentine Cut DC High value resistors Increased Accuracy Lower tolerances. Wider final value flexibility. Scan Cut All Compatible with high frequency applications. Excellent tolerance accuracy. Typically applicable only for DC applications. Higher cost than Plunge or L cut (depends on quantity of cuts required). Highest cost. 16 w w w. t h i n f i l m. c o m

17 Polyimide Supported Bridges Polyimide Supported Bridges (Poly Bridges) provide a dramatically improved alternative to traditional wire bonding or standard air bridges. Because bridge height, length and overall placement are very consistent and durable, optimum performance can be easily repeated which can minimize or eliminate test and tune time. Poly Bridges offer increased assurance over ordinary Air Bridges or bond wires because the bridge is maintained at a consistent height by the polyimide, 3 4 microns, and keeps the bridge from collapsing preventing unwanted electrical shorts. Because the parts will be delivered to you with this type of consistent interconnect solution, assembly time can be minimized or eliminated. Poly Bridges can also dramatically improve assembly yields by eliminating the shorts caused by traditional bond wire methods on very small interdigital structures, such as Lange couplers. ATP s Team of CAD professionals are ready and willing to add these types of interconnect solutions to your existing designs. Please ask for Design For Manufacturability, document #DG Polyimide Properties Polyimide Bridges Tensile Strength Mpa 215 Young s Modulus Gpa 2.5 Tensile Elongation % 85 Glass Transition Temperature C 285 Thermal Decomposition Temperature C 525 Coefficient of Thermal Expansion ppm/ C 55 Coating Stress (100 silicon) MPa 33 Dielectric Constant 1 MHz; 0%/50% RH 3.2/3.3 Dissipation Factor 1 MHz; 0%/50% RH 0.003/0.008 Dielectric Strength V/μm 345 Moisture 50% RH % 1.08 Density g/cc 1.39 Refractive 633nm 1.69 Polyimide Protective Film Polyimide Fused Silica/Quartz w w w. t h i n f i l m. c o m 17

18 Solder Dams Polyimide Solder Dams Polyimide can also be used as a braze stop or solder dam. This polyimide is photo-definable and is non-conductive. The typical height of the solder dam is 3 to 4 microns. Metal Solder Dam Solder Dam Metal Solder Dams Oxidizing metals can also be used as solder dams. The more common metals used for this purpose are TaN, TiW and Ni. The metal solder dam structures are photo-defined. These metals can either be placed on the Au conductor or windows can be opened in the conductor structure to expose these underlying layers. Solderable Tensile Strength Mpa 215 Young s Modulus Gpa 2.5 Tensile Elongation % 85 Glass Transition Temperature C 285 Thermal Decomposition Temperature C 525 Coefficient of Thermal Expansion ppm/ C 55 Coating Stress (100 silicon) MPa 33 Dielectric Constant 1 MHz; 0%/50% RH 3.2/3.3 Dissipation Factor 1 MHz; 0%/50% RH 0.003/0.008 Dielectric Strength V/μm 345 Moisture 50% RH % 1.08 Density g/cc 1.39 Refractive 633nm 1.69 Polyimide Solder Dam Gold Bumping ATP can provide gold (Au) bumping for the Flip Chip Technologies. Gold bumps are used to eliminate wire bonding which will improve electrical performance at higher frequencies by inverting a compatible device directly onto the gold bumps. The bumps are a high purity, plated Au. They are fabricated using a photolithographic process that insures precise, repeatable placement onto the circuits. The top diameter of the bump will be slightly smaller than the diameter of the base. This assists with proper attachment using compression attachment methods. Gold bumps are compatible with many of the other capabilities offered by ATP such as integrated resistors, conductive vias, polyimide bridges and solder dams. This allows you to minimize your assembly steps and optimize your design. Typical gold bump height is: 0.001" (25.4microns) typical, 50µm max Typical gold bump diameter is: 0.001" (25.4microns) typical 18 w w w. t h i n f i l m. c o m

19 Edge Wraps Edge metallization can be added as an alternative to via or slotted wraps. This process can be photo defined if needed. ATP offers an alternative, cost-effective Indented Edge Wraps versus Edge Defined Wraps. Check with the sales department for additional details. Edge Defined Wraps Indented Edge Wraps Edge Wrap for Surface Mount Technology w w w. t h i n f i l m. c o m 19

20 Inductor Coils ATP introduces a new line of printed spiral inductor coils in a wide range of values from 2.2 nh to nh. These coils have been modeled and optimized using advanced computer automated design tools to produce data and graphs to help you utilize these devices in your own thin-film or hybrid designs. These printed inductors can be used in a wide variety of applications from DC and RF filtering to gain shaping and equalization circuits. Use them in a new design approach or to enhance or modify a current design for a specific performance you desire! These spiral inductors are designed with thick Au conductors on fused silica quartz to minimize series resistance and promote high Q values. The coils are offered with or without backside metallization to offer you the ability to mount in various applications utilizing isolated or grounded configurations. Supporting graphs and data are also available for these two configurations. They also have additional pads located around the coil to help you customize and fine tune in your final values desired. They are protected with a polyimide coating to help resist in scratching, bridging or shorting during assembly and tuning. Inductor Coil If you do not see a value that fits your exact application, contact ATP Sales and we will custom fabricate the exact printed coil you desire. ATP-I-010-Q-022 Inductor Turns: 2.5 Inductance (L): 2.2nH Q: 4.5 Part Size: 0.022" x 0.022" 0.559mm x 0.559mm ATP-I-010-Q-730 Inductor Turns: 4.0 Inductance (L): 7.3nH Q: 5.9 Part Size: 0.025" x 0.025" 0.635mm x 0.635mm ATP-I-010-Q-350 Inductor Turns: 3.0 Inductance (L): 3.5nH Q: 4.5 Part Size: 0.022" x 0.022" 0.559mm x 0.559mm ATP-I-010-Q-120 Inductor Turns: 4.5 Inductance (L): 12.0nH Q: 7.0 Part Size: 0.030" x 0.030" 0.762mm x 0.762mm ATP-I-010-Q-390 Inductor Turns: 3.5 Inductance (L): 3.9nH Q: 5.2 Part Size: 0.022" x 0.022" 0.559mm x 0.559mm ATP-I-010-Q-158 Inductor Turns: 5.0 Inductance (L): 15.8nH Q: 8.1 Part Size: 0.030" x 0.030" 0.762mm x 0.762mm 20 w w w. t h i n f i l m. c o m

21 ATP-I-010-Q-196 Inductor Turns: 5.5 Inductance (L): 19.6nH Q: 8.6 Part Size: 0.032" x 0.032" 0.813mm x 0.813mm ATP-I-010-Q-406 Inductor Turns: 8.25 Inductance (L): 40.6nH Q: 10.9 Part Size: 0.038" x 0.038" 0.965mm x 0.965mm ATP-I-010-Q-219 Inductor Turns: 6.5 Inductance (L): 21.9nH Q: 9.6 Part Size: 0.034" x 0.034" 0.864mm x 0.864mm ATP-I-010-Q-783 Inductor Turns: 9.5 Inductance (L): 78.3nH Q: 18.1 Part Size: 0.050" x 0.050" 1.270mm x 1.270mm ATP-I-010-Q-264 Inductor Turns: 7.0 Inductance (L): 26.4nH Q: 9.4 Part Size: 0.032" x 0.032" 0.813mm x 0.813mm ATP-I-010-Q-877 Inductor Turns: 10.5 Inductance (L): 87.7nH Q: 14.7 Part Size: 0.046" x 0.046" 1.168mm x 1.168mm ATP-I-010-Q-282 Inductor Turns: 7.5 Inductance (L): 28.2nH Q: 8.9 Part Size: 0.032" x 0.032" 0.813mm x 0.813mm ATP-I-010-Q-1127 Inductor Turns: 12.0 Inductance (L): 112.7nH Q: 16.9 Part Size: 0.052" x 0.052" 1.321mm x 1.321mm ATP Part Number Inductor Turns Inductance (L) Q Part Size ATP-I-010-Q nh " x 0.022" (0.559mm x 0.559mm) ATP-I-010-Q nh " x 0.022" (0.559mm x 0.559mm) ATP-I-010-Q nh " x 0.022" (0.559mm x 0.559mm) ATP-I-010-Q nh " x 0.025" (0.635mm x 0.635mm) ATP-I-010-Q nh " x 0.030" (0.762mm x 0.762mm) ATP-I-010-Q nh " x 0.030" (0.762mm x 0.762mm) ATP-I-010-Q nh " x 0.032" (0.813mm x 0.813mm) ATP-I-010-Q nh " x 0.034" (0.864mm x 0.864mm) ATP-I-010-Q nh " x 0.032" (0.813mm x 0.813mm) ATP-I-010-Q nh " x 0.032" (0.813mm x 0.813mm) ATP-I-010-Q nh " x 0.038" (0.965mm x 0.965mm) ATP-I-010-Q nh " x 0.050" (1.270mm x 1.270mm) ATP-I-010-Q nh " x 0.046" (1.168mm x 1.168mm) ATP-I-010-Q nh " x 0.052" (1.321mm x 1.321mm) w w w. t h i n f i l m. c o m 21

22 Laser Diode Submounts (Au/Sn) Applied Thin-Film Products (ATP) is one of the industry leaders for Laser Diode Submounts with pre-deposited Au/Sn. ATP custom fabricates thin-film submounts with tightly controlled substrate and metal thicknesses for your alignment needs. Hi-thermal conductivity materials include Aluminum Nitride (AlN) and Beryllium Oxide (BeO). Au/Sn These submounts can have pre-deposited and patterned Gold Tin (Au/Sn) to accommodate lower manufacturing cost, higher volume, and automated assembly of laser diode modules. The use of predeposited and patterned Au/Sn replaces the more traditional approach of using thick Au/Sn preforms. ATP s standard alloy composition is 80% Au and 20% Sn which typically reflows at 278 C under a high purity gas blanket consisting either of forming gas or Nitrogen. Other Au/Sn custom compositions are available. ATP offers a sputtered and plated Au/Sn eutectic. Samples are available. Please ask for ATP1014S for sputtered and ATP1014P for plated. In order to strengthen the relationship with our customers, ATP performs AuSn a lot to ensure the performance of the AuSn meets our customers expectation. We offer three standard test profiles for our customers to choose from that would closely resemble their assembly processes: Test Profile Detail Profile 1 Circuit with Au/Sn pattern is placed on work holder which is at C for 5 seconds C ±5 C soak for 1 min Ramp to 290 a305 C and stay for 5 seconds C ±5 C soak for 2 seconds Ramp to C and stay for 5 seconds Placement of test die on Au/Sn Pattern After the circuit with Au/Sn pattern is placed on work holder As the beginning of the soak and the test die is held down until completion of the profile After ramp temparature is reached Note: Test Profile 1 is applicable to both plated and sputtered Au/Sn patterns. Test Profiles 2 and 3 are only applicable to plated Au/Sn patterns. Replaces Traditional Au/Sn Preforms Accurately Controlled Thickness Lot to Lot Consistency Reduce Au/Sn Thickness Scrub On/Off On Off Homogeneous 80% Au/20% Sn Complex Solder Pad Geometries Accurate Laser Alignment Pre-Deposited and Patterned Au/Sn Guidelines Smallest Feature Size: 0.003" x 0.003" (0.076mm x 0.076mm) Minimum Pitch (minimum space between Au/Sn Pads): 0.003" (0.076mm) Maximum Au/Sn Thickness: 400µ" (10 microns) Typical Au/Sn Thickness: µ" (4 6 microns) (Thickness outside of the typical range might restrict the process used.) Minimum Sputtered Au/Sn Thickness: 80µ" (2 microns) Tolerance on Thickness of Plated Au/Sn: ±80µ" (±2 microns) Placement Accuracy of Au/Sn: ±0.0005" (±0.0127mm) Dimensional Tolerance on Au/Sn Pad: ±0.0002" (±0.005mm) Minimum Pull Back From Laser Cut Edge: " (0.0381mm) Minimum Pull Back From Conductive Plated Thru Via Holes: " (0.0635mm) On Laser Diode Submount ATP1014P: Plated before reflow ATP1014P: Plated after reflow ATP1014S: Sputtered before reflow ATP1014S: Sputtered after reflow AlN Material 170W/mk Thermal Conductivity 22 w w w. t h i n f i l m. c o m

23 Via Hole Technology ATP offers embedded ground connections formed with via holes through the substrate material. These connections provide a convenient means of obtaining a ground return through the case of the mounting medium, without the use of cumbersome bond ribbons. Assembly concerns are also addressed by eliminating epoxy and solder bleed onto the component mounting surfaces with either polyimide or solid filled vias. Hollow Plated Vias Hollow plated vias are Laser or Ultrasonic drilled with diameters as low as 50% of the material thickness and are available on Alumina (AL2O3) Aluminum Nitride (AlN), Beryllium Oxide (BeO) and Fused Silica/Quartz. This process can be used to create slots and castellations. Enforced Hollow Plated Via-Wrap Enforced vias are an additive process to the standard hollow plated vias. This application is used for thicker conductive metal on the wall and anchor ends of the via holes. This process will ensure increased stability and conductivity. Metal overlaps over existing standard metallizations. The metal via wrap on the surface can be a minimum of 0.002" (0.0508mm) larger than the via hole diameter. The Au metal via wrap thickness can be µ" ( microns). Polyimide Filled Vias Via is filled with a non-conductive polyimide plug for via hole assemblies. The non-conductive plug will prevent epoxy and eutectic solders from reaching the surface of the circuit, while keeping continuity between the back side and front side surfaces. Hollow Plated Vias Enforced Hollow Plated Via-wrap Cross-section Cross-section Physical Properties of Polyimide Fill Max. Use Temp F Base Aluminum Oxide Compressive Strength 4200 psi Flexural Strength 1900 psi Dielectric Strength 125 volts/mil Volume Resistance 10 8 ohm cm Thermal Conductivity 15 BTU in/hr. F ft. 2 Expansion / F Components 2.0 Mix Ratio 100 to 30 (by weight) Consistency Paste Manufactured according to Mil Spec MIL-I Polyimide Filled Vias Hollow Plated, Polyimide Filled and Enforced Via Sizes Substrate Thickness Preferred Hole Diameter Cross-section Minimum Allowable Hole Diameter 0.010" (0.254mm) " ( mm) 0.005" (0.127mm) 0.015" (0.381mm) " ( mm) 0.007" (0.177mm) 0.020" (0.508mm) " ( mm) 0.010" (0.254mm) 0.025" (0.635mm) " ( mm) 0.012" (0.305mm) w w w. t h i n f i l m. c o m 23

24 Via Hole Technology (Continued) Au or Cu Solid Filled Vias The Au or Cu Via is completely filled and planarized, which provides a low inductance ground path on both sides without the need for venting structures, dissimilar metals or exposed oxides. Filled vias can also act as a thermal pathway for two-sided signal interconnects. ATP offers three types of solid filled via circuits: Au, Cu and Polyimide. Filled vias are available on Alumina (AL2O3), Aluminum Nitride (AlN) and Beryllium Oxide (BeO). Au/Cu Solid Filled Via sizes Substrate Thickness Ideal Via Diameter Minimum Via Spacing Center to Center Center to Edge Cross-section 0.010" (0.254mm) 0.007" 0.020" ( mm) 0.017" 0.040" ( mm) 0.008" 0.014" ( mm) Au Solid Filled Vias 0.015" (0.381mm) 0.011" 0.020" ( mm) 0.022" 0.040" ( mm) 0.010" 0.014" ( mm) 0.020" (0.508mm) 0.014" 0.020" ( mm) 0.028" 0.040" ( mm) 0.011" 0.014" ( mm) 0.025" (0.635mm) 0.017" 0.020" ( mm) 0.034" 0.040" ( mm) 0.013" 0.014" ( mm) Filled Via Planarity Front Side +0/-0.001"(+0/ mm) Back Side "/-0.001"( / mm) Electrical Current Limits For Solid-Filled Vias Introduction How much DC current can safely be passed through a Copperfilled via? To answer this question, we must specify how the Joule heat generated in the via will escape. Usually, the B-face of a thin-film circuit is brazed or epoxied to a metal package base or carrier. The exposed A-face has thin-film traces and other circuit elements on it. Joule heat generated in the Cu-filled via exits through the package base. This is the model we will analyze. Details of the mathematical analysis are deferred to the Appendix. Thermal Model Figure 1 shows a cross-sectional view of the assembly to be analyzed. The ceramic substrate with an isolated Cu via is brazed to a Tungsten:Copper (W:Cu) carrier. The carrier is firmly mounted to a system heatsink whose temperature is T a. Solid Cu Via Thin-film Au Trace Ceramic Substrate W: Cu Package Base (Carrier) System Heatsink FIgure 1 Cu Solid Filled Vias Cross-section Copper has such a high thermal conductivity that for this analysis, heat leaks from the via s upper surface and through the via walls can be neglected. Essentially all of the Joule heat will exit through the via s lower end and thence through the carrier to the system heatsink. We ll return to this assumption in Summary And Conclusions. For our model, the via s upper end is the hottest point, with a temperature, T m. Most circuit designers would not want T m to be much above 100 C so this will be our design limit. An expression in the Appendix enables other choices for T m to be made. The system heatsink temperature, T a, often is specified to be 80 C. Numerical Parameters Material Parameter Symbol Value Units Cu Electrical Resistivity ρ Ohm-meters Thermal Conductivity κ 391 Watts/meter Kelvin W:Cu, (80:20) Electrical Resistivity ρ Ohm-meters Thermal Conductivity κ Watts/meter Kelvin 24 w w w. t h i n f i l m. c o m

25 Via Hole Technology (Continued) Summary And Conclusions An extremely large DC current is required to heat the via s A-face to 100 C. The present analysis has ignored the problem of passing such a large current into and out of the via. Standard thin-film Au traces could not safely sustain such a high current. A Cu via is safe to operate with any electrical current that the thin-film circuit traces can safely deliver to it. Some Joule heat will escape through the via walls into the ceramic substrate and down to the system heatsink. Thus I m given above is a lower bound for the current that will bring the via s A-face up to 100 C. Cross section of Au Solid Filled Via Mathematical Appendix Consider only the Joule heating in the Cu-filled via and its spreading through the package base to the system heatsink. Then the current, I m, required to heat the via s A-face to a temperature, T m, is given by the following expression: Cross section of Cu Solid Filled Via I m = (π/4)(d 2 /H) { 2(T m -T a )(κ/ρ) [1+(π/4)(κ/κ 1 )(D/H)]} ½ Where D and H are the via s diameter and height respectively, ρ and κ are the via metal s electrical resistivity and thermal conductivity respectively, κ 1 is the thermal conductivity of the package base metal, T a is the temperature of the system heatsink. If we assume that the current, I m, spreads from the via s B-face into the W:Cu base and to the system heatsink, then we can estimate the heating from this source. The spreading resistance from a circular source of diameter, D, is given by: Cross section of Hollow Plated Via R sp = ρ 1 /(2D) where ρ 1 is the electrical resistivity of the W:Cu base. For the present problem, R sp = Ohms compared with the via s resistance of Ohms. The additional heating from the W:Cu will reduce the value of I m from Amperes. The preceding conclusions remain valid. Cross section of Polyimide Filled Via Via Dimensions Height (H) 0.38mm (0.015") Diameter (D) 0.28mm (0.011") Results T m ( C) I m (Amperes) P m (Watts) R via (Ohms) Cross section of Polyimide Filled Via at 200X w w w. t h i n f i l m. c o m 25

26 Safe Current Limits in Thin Film Gold and Copper Two issues will be discussed in the following: Electromigration Joule heating Electromigration Earliest workers in thin film microelectronics observed that a large, steady electrical current could cause voids to form in thin film Aluminum and Gold traces, ultimately causing the trace to fail. Raising a trace s temperature caused it to fail at even lower currents. Such electromigration failures were far less likely if RF currents of the same amplitude were used. Experiments showed large differences in electromigration threshold that depended on the grain structure of the metal trace. Copper (Cu) generally was found to be more resistant to electromigration than Gold (Au). Discussion of some of these variables can be found in the references 1 and 2, listed below. However, for both Au and Cu, a current density of 10 5 A / cm 2 appears to be safe at usual operating temperatures of hybrid microelectronics. Thus in the following discussion, we will assume that the maximum acceptable current density is given by: J m = 1.0 x 10 5 Amps / cm 2 Equation 1 I m = J m t W = t W x 10 5 Amps. Equation 2 Definitions Symbol Description W Trace width L Trace length t Metal thickness a = t W Cross-sectional area of metal trace A = L W Footprint of metal trace on substrate ρ Electrical resistivity of trace metal I Electrical current I m Maximum safe electrical current J m = I m / (tw) Maximum safe current density (10 5 A / cm 2 ) R = (ρ / t) (L / W) Electrical resistance of trace P = I 2 R Power dissipated in trace Q = P / A Heat flux from trace into substrate V = I R Voltage drop along trace length Design Tools Figure 1 shows a plot of Eqn 3), power dissipated in a 0.100" (2.54mm) long Cu trace versus trace width, W, for 0.001" (0.025mm), " (0.038mm) and 0.002" (0.051mm) thick plated Cu traces. The assumed electrical resistivity of the Cuplating was 3.0 x 10-8 Ω-m. Joule Heating Do such large currents cause significant Joule heating in the traces? The short answer is: Yes! Power dissipated in the trace is given by the following expression: POWER DISSIPATION WITH J = ^5 A/sq cm P = I 2 R = ρ J 2 WLt (Watts) Equation 3 The thermal flux that the substrate must conduct away from the trace becomes: Q = P / (WL) = ρ J 2 t (Watts / cm 2 ) DISSIPATED POWER (WATTS) P th (W) P 15 (W) P 2 (W) P 1 (W) Equation Q depends only on the metal s electrical resistivity, the square of the current density and the trace s thickness. The thicker the trace with the current density fixed at J m the more power that must be conducted away from the trace! NOTE: This problem is not the same as determining the fusing current of a free-standing bond wire! TRACE WIDTH (10^-3 INCHES) Figure 1: Power dissipated in a 0.100" (2.54mm) long plated Cu trace versus trace width. The trace is on a yet unspecified ceramic substrate. The electrical current density in the trace is fixed at 1.0 x 10 5 A/cm 2. Also plotted is empiricallyderived thermal limit for 10 mil thick alumina. 26 w w w. t h i n f i l m. c o m

27 Safe Current Limits in Thin Film Gold and Copper (Continued) Thermal Model T max The upper-most trace on the left in Figure 1 is an empiricallyderived thermal limit for a 0.010" (0.254mm) thick 99.6% Alumina substrate epoxied to a Kovar carrier and secured to an Aluminum heatsink. The heatsink temperature was set at 85 C with the maximum trace temperature of 100 C, a 15 C temperature rise due to the Joule heating. Due to AlN and BeO substrates high thermal conductivities, their thermal limits are far too high to have a practical impact. Bond Line Trace Substrate Package Base W L H How to Use This Graph If your substrate is AlN or BeO, then you do not need to worry about Joule heating. The thermal limits for these substrate materials are much too high to impact your design. If your substrate choice is Alumina, then go to Figure 2, a plot of current versus trace width, W, for " (0.0127mm), 0.001" (0.0254mm), " (0.038mm) and 0.002" (0.051mm) trace thicknesses. Decide on a trace width and thickness for your bias line. Return to Figure 1 to make sure that your choice of trace dimensions does not lie above the thermal limit (upper-most trace on the left side). If the dissipated power for your choice of trace dimensions exceeds the thermal limit, then you should evaluate the assumptions on which it was based for its relevance to your design (See Figure 3 and the Thermal Model paragraph above.) System Heatsink T hs Figure 3: Cutaway view of thin-film metal trace thermal model. These Design Guidelines are intended to assist you in choosing a safe bias current level. Can you exceed the limits on current density and temperature rise? Probably, but there is no simple answer to this question. Too many variables affect the electromigration wearout of thin film metal traces. References 1. Ryu, Changsup, et. al., Electromigration of Submicron Damascene Copper Interconnects, 1998 Symposium on VLSI Technology, June 8-11, Kilgore, Steve, et. al., Electromigration of Electroplated Gold Interconnects, Mater. Res. Soc. Symp. Proc. Vol. 863 (2005). 14 CURRENT LEVELS WITH J = ^5 A/sq cm 12 ELECTRICAL CURRENT (AMPS) I 2 (W) I 15 (W) I 1 (W) I 05 (W) TRACE WIDTH (10^-3 INCHES) Figure 2: Graph of electrical current for a current density of 1.0 x 10 5 A/cm 2. Trace thicknesses of " (0.0127mm), 0.001" (0.0254mm), " (0.0381mm) and 0.002" (0.0508mm) are shown. w w w. t h i n f i l m. c o m 27

28 Microstrip Transmission Lines ATP offers three different types of 50 ohm transmission lines: single line, single line with two rows of tuning pads, and single line with four rows of tuning pads. ATP Transmission Lines have a fixed width and adjustable lengths, no mask purchase required. Lines are continuous and can therefore be diced to any size. In-stock lengths are in 0.010" (0.254mm) increments, up to 0.500" (12.70mm). Material: Asfired Alumina 99.6% (polished Alumina available upon request) Metallization front and back sides: TiW = Å (0.03µm 0.08µm) Au = 120µ" (3 microns) minimum Delivery: Ships in hours (in-stock lengths only) for Asfired Alumina. Polished Alumina will be special order. Single Transmission Lines Part number definition = ATP-M-TTT-WWW-LLL Material F = Asfired P = Polished Thickness of Material in inches Fixed Circuit Width* Length of Material in inches Thickness of Material Fixed Line Width* Fixed Circuit Width* 0.005" (0.127mm) 0.005" (0.127mm) 0.050" (1.27mm) 0.010" (0.254mm) 0.010" (0.254mm) 0.050" (1.27mm) 0.015" (0.381mm) 0.015" (0.381mm) 0.050" (1.27mm) 0.020" (0.508mm) 0.020" (0.508mm) 0.060" (1.52mm) 0.025" (0.635mm) 0.025" (0.635mm) 0.060" (1.52mm) Single Line *Once thickness of material is determined (TTT), both line width and circuit width (WWW) are fixed. Use the table above to find the Fixed Circuit Width (WWW). Only material (M), thickness of material (TTT) and length of material (LLL) can be specified. Single Transmission Lines with Two Rows of Tuning Pads Part number definition = ATP-WP2-M LLL Material F = Asfired P = Polished Length of Material in inches Thickness of Material Fixed Line Width Fixed Circuit Width 0.010" (0.254mm) 0.010" (0.254mm) 0.030" (0.762mm) Single Line with Two Rows of Tuning Pads Single Transmission Lines with Four Rows of Tuning Pads Part number definition = ATP-WP4-M LLL Material F = Asfired P = Polished Length of Material in inches Thickness of Material Fixed Line Width Fixed Circuit Width 0.015" (0.381mm) 0.015" (0.381mm) 0.050" (1.27mm) Data sheets available upon request. Single Line with Four Rows of Tuning Pads 28 w w w. t h i n f i l m. c o m

29 Stand Off/Isolation Pads ATP offers a wide variety of Stand Off/Isolation Pads to aid our customers in their hybrid assembly processing. Stand Offs and Isolation Pads can be used in a variety of ways depending on the metal scheme ordered. They can be used as a capacitive standoff, component mounting isolation pad, landing pads to reduce bond wire and DC bias wire lengths, gap pedestals for aligning component heights and many other useful configurations. ATP Standoffs Parts List Part number definition = ATPS-M-TTT-WWW-LLL Material: Asfired Alumina 99.6% and Aluminum Nitride is available. Metallization front and back sides: TiW = Å (0.03µm 0.08µm) Au = 120µ" (3 microns) minimum Delivery: hours (in-stock lengths only) A C Material F = Asfired A = AIN Thickness in inches (A) Width of Material in inches (B) Length in inches (C) B ATP Part Number Thickness (A) Width (B) Length (C) ATPS-F "(0.127mm) 0.010"(0.254mm) 0.010"(0.254mm) ATPS-F "(0.127mm) 0.015"(0.381mm) 0.015"(0.381mm) ATPS-F "(0.127mm) 0.020"(0.508mm) 0.020"(0.508mm) ATPS-F "(0.127mm) 0.025"(0.635mm) 0.025"(0.635mm) ATPS-F "(0.254mm) 0.010"(0.254mm) 0.010"(0.254mm) ATPS-F "(0.254mm) 0.015"(0.381mm) 0.015"(0.381mm) ATPS-F "(0.254mm) 0.020"(0.508mm) 0.020"(0.508mm) ATPS-F "(0.254mm) 0.025"(0.635mm) 0.025"(0.635mm) ATPS-F "(0.381mm) 0.010"(0.254mm) 0.010"(0.254mm) ATPS-F "(0.381mm) 0.015"(0.381mm) 0.015"(0.381mm) ATP Part Number Thickness (A) Width (B) Length (C) ATPS-F "(0.381mm) 0.020"(0.508mm) 0.020"(0.508mm) ATPS-F "(0.381mm) 0.025"(0.635mm) 0.025"(0.635mm) ATPS-F "(0.508mm) 0.010"(0.254mm) 0.010"(0.254mm) ATPS-F "(0.508mm) 0.015"(0.381mm) 0.015"(0.381mm) ATPS-F "(0.508mm) 0.020"(0.508mm) 0.020"(0.508mm) ATPS-F "(0.508mm) 0.025"(0.635mm) 0.025"(0.635mm) ATPS-F "(0.635mm) 0.010"(0.254mm) 0.010"(0.254mm) ATPS-F "(0.635mm) 0.015"(0.381mm) 0.015"(0.381mm) ATPS-F "(0.635mm) 0.020"(0.508mm) 0.020"(0.508mm) ATPS-F "(0.635mm) 0.025"(0.635mm) 0.025"(0.635mm) ATP Bond Qualification Coupons This is a unique, cost-effective tool offered by ATP to aid our customers in the daily bond pull qualification required by mil-883 hybrid assemblies. The coupon gives you a platform that allows you to organize and track your bond pulls on a daily and monthly basis. The coupon is designed as a calendar to maintain daily through monthly test results of each bonder on your assembly line. Each pad maintains the bond pulls done on a daily basis and allows you to add each day a new set of bonds throughout the month. The coupon allows you the ability to mark or scribe specific information on it such as the month samples are from and which bonder they were performed on. This is a great tool to organize and retain bond pull information throughout the year and, along with your daily logs, it puts audit and recall data at your fingertips in an organized fashion. Bond Coupon Actual size is 0.256" x 0.256" (6.5mm x 6.5mm) Alternative Bond Coupon Actual size is 1.000" x 0.500" (25.4mm x 12.7mm) w w w. t h i n f i l m. c o m 29

30 Packaging/Chip Trays ATP has an extensive inventory of industry standard chip trays (waffle packs) to meet your packaging needs. Please check our listing below. If ATP doesn t stock the type/size chip tray that meets your needs, then we may be able to special order that specific chip tray. Customers may incur additional charges and extended lead time for special order chip trays. ATP also offers some Gel packaging and vacuum released Gel packaging in some cases for additional charges. Please check with our Sales Department.. Tray Part Number Min. Dimension Max. Dimension Depth Cavity Quantity X Quantity H C " 0.011" 0.024" H C " 0.018" 0.009" H C " 0.043" 0.013" H C " 0.022" 0.012" H C " 0.022" 0.009" H C " 0.027" 0.014" H C " 0.026" 0.012" H C " 0.026" 0.015" H C " 0.030" 0.010" H C " 0.030" 0.024" H C " 0.240" 0.015" H C " 0.052" 0.009" H C " 0.123" 0.013" H C " 0.037" 0.019" H C " 0.040" 0.015" H C " 0.110" 0.018" H C " 0.102" 0.102" H C " 0.045" 0.024" H C " 0.045" 0.011" H C " 0.050" 0.010" H C " 0.050" 0.010" H C " 0.050" 0.016" H C " 0.062" 0.020" H C " 0.090" 0.009" H C " 0.055" 0.016" H C " 0.157" 0.016" H C " 0.060" 0.016" H C " 0.092" 0.024" H C " 0.063" 0.018" H C " 0.631" 0.024" H C " 0.065" 0.024" H C " 0.125" 0.025" H C " 0.116" 0.035" H C " 0.070" 0.016" H C " 0.070" 0.035" H CR-62C " 0.232" 0.035" H C " 0.090" 0.018" H TW-66C " 0.087" 0.035" H C " 0.105" 0.020" H C " 0.150" 0.016" H C " 0.075" 0.018" H C " 0.109" 0.036" H C " 0.51" 0.085" H C " 0.110" 0.020" Y Quantity Tray Part Number Min. Dimension Max. Dimension Depth Cavity Quantity X Quantity H C " 0.080" 0.050" H C " 0.224" 0.025" H C " 0.085" 0.024" H44E-C C " 0.430" 0.030" H C " 0.389" 0.056" H C " 0.090" 0.011" H C " 0.090" 0.016" H C " 0.090" 0.024" H C " 0.090" 0.035" H C " 0.130" 0.020" H44E-C C " 0.175" 0.020" H C " 0.104" 0.030" H C " 0.234" 0.025" H C " 0.174" 0.016" H C " 0.174" 0.016" H C " 0.100" 0.032" H C " 0.125" 0.05" H C " 0.219" 0.035" H C " 0.110" 0.016" H C " 0.479" 0.033" H C " 0.285" 0.108" H C " 0.229" 0.065" H C " 0.229" 0.065" H C " 0.285" 0.018" H C " 0.176" 0.016" H C " 0.245" 0.030" H C " 0.184" 0.020" H20E C " 0.150" 0.020" H C " 0.199" 0.016" H C " 0.299" 0.055" H C " 0.130" 0.016" H C " 0.181" 0.030" H C " 0.300" 0.030" H C " 0.169" 0.045" H20E C " 0.155" 0.020" H20E C " 0.180" 0.020" H C " 0.230" 0.016" H C " 0.140" 0.024" H C " 0.175" 0.050" H C " 0.848" 0.024" H C " 0.150" 0.016" H C " 0.249" 0.024" H C " 0.284" 0.035" H C " 0.507" 0.035" Y Quantity 30 w w w. t h i n f i l m. c o m

31 Tray Part Number Min. Dimension Max. Dimension Depth Cavity Quantity w w w. t h i n f i l m. c o m X Quantity H C " 0.334" 0.025" H C " 0.160" 0.020" H C " 1.200" 0.020" H C " 0.704" 0.030" H C " 0.165" 0.024" H C " 0.288" 0.039" H C " 0.219" 0.035" H C " 0.269" 0.035" H C " 0.369" 0.035" H C " 0.329" 0.035" H C " 0.179" 0.024" H C " 0.210" 0.024" H C " 0.349" 0.024" H C " 0.528" 0.030" H C " 0.244" 0.021" H C " 0.209" 0.030" H20E C " 0.265" 0.020" H44E-C C " 1.035" 0.020" H44E-C C " 0.590" 0.020" H44E-C C " 0.235" 0.020" H C " 0.378" 0.050" H C " 0.468" 0.025" H C " 0.219" 0.035" H C " 0.419" 0.035" H C " 0.618" 0.035" H C " 0.379" 0.024" H C " 0.220" 0.024" H C " 0.303" 0.024" H C " 0.558" 0.030" H C " 0.531" 0.035" H C " 0.748" 0.024" H C " 0.249" 0.130" H C " 0.625" 0.165" H C " 0.665" 0.015" H C " 0.356" 0.024" H C " 0.270" 0.035" H C " 0.420" 0.030" H C " 0.359" 0.050" H C " 0.359" 0.024" H C " 0.490" 0.035" H C " 0.490" 0.035" H C " 0.295" 0.032" H C " 0.287" 0.032" H C " 0.474" 0.025" H C " 0.299" 0.030" H C " 0.650" 0.040" H C " 0.459" 0.055" H C " 0.339" 0.011" H44E-C C " 0.780" 0.030" H C " 1.016" 0.025" H20E C " 0.345" 0.020" H C " 0.622" 0.020" Y Quantity Tray Part Number Min. Dimension Max. Dimension Depth Cavity Quantity X Quantity H C " 0.640" 0.035" H C " 0.359" 0.100" H C " 0.165" 0.024" H C " 0.288" 0.039" H C " 0.219" 0.035" H C " 0.269" 0.035" H C " 0.369" 0.035" H C " 0.329" 0.035" H C " 0.179" 0.024" H C " 0.210" 0.024" H C " 0.349" 0.024" H C " 0.528" 0.030" H C " 0.244" 0.021" H C " 0.209" 0.030" H20E C " 0.265" 0.020" H44E-C C " 1.035" 0.020" H44E-C C " 0.590" 0.020" H44E-C C " 0.235" 0.020" H C " 0.378" 0.050" H C " 0.468" 0.025" H C " 0.219" 0.035" H C " 0.419" 0.035" H C " 0.618" 0.035" H C " 0.379" 0.024" H C " 0.220" 0.024" H C " 0.303" 0.024" H C " 0.558" 0.030" H C " 0.531" 0.035" H C " 0.748" 0.024" H C " 0.249" 0.130" H C " 0.625" 0.165" H C " 0.665" 0.015" H C " 0.356" 0.024" H C " 0.270" 0.035" H C " 0.420" 0.030" H C " 0.359" 0.050" H C " 0.359" 0.024" H C " 0.490" 0.035" H C " 0.490" 0.035" H C " 0.295" 0.032" H C " 0.287" 0.032" H C " 0.474" 0.025" H C " 0.299" 0.030" H C " 0.650" 0.040" H C " 0.459" 0.055" H C " 0.339" 0.011" H44E-C C " 0.780" 0.030" H C " 1.016" 0.025" H20E C " 0.345" 0.020" H C " 0.622" 0.020" H C " 0.640" 0.035" H C " 0.359" 0.100" Y Quantity 31

32 Fractal Fasten Fractal Fasten is a unique backside metallization developed to enhance the adherence of substrates to carriers using both paste and sheet epoxies. This unique metallization was designed with a fractal pattern that was perfected in cooperation with manufacturers using a variety of substrate materials, mounting configurations and carrier materials. The result is an unprecedented backside metallization that has superior adhesion, pull and shear strengths that cannot be achieved with standard metallization schemes. This metallization technique offers a surface that allows the epoxy to attach itself securely and grip firmly, therefore eliminating possible delaminating and dislodging issues. This method of attachment has proven to be effective with substrates attached to carriers or mounted directly onto kovar, aluminum and other various metal housings. ATP has spent numerous hours of electrical design simulations to ensure that the metallization does not have any adverse electrical skinning or negative ground effects on conventional microwave designs. ATP now offers this same unique cost effective backside metal to all of our customers wishing to attach substrates with epoxies without experiencing the usual problems, such as substrates not adhering or lifting during or after temperature shock and temperature cycling. This metallization scheme, when used and applied as directed, will result in superior adhesions in comparison to conventional-type processes, thus eliminating the age old headaches of pre-scoring or roughing up the surface of the substrate before attaching. ATP has developed two types of backside metallization to optimize adhesion, utilizing both paste and film epoxy applications, allowing our customers to attach directly to aluminum, copper, brass and kovar housings to minimize size and weight of the assembly. Contact ATP for further information on this unique backside metal or to request samples. We are very interested in discussing your individual application process and product needs. Film Epoxies Recommended: Ablefilm 5025E Example of Backside Metallizations Prepare and cut a predetermined suitable size of Ablefilm 5025E to give ample coverage to the substrate to be attached. Precautions should be taken with this material since it is usually stored frozen and needs to reach room temperature before handling. Clean all surfaces to be joined with Isopropanol. Place the Ablefilm 5025E in between the housing/carrier and the male Fractal Fasten substrate to be attached in a sandwich fashion. Repeat this until all substrates have been positioned in the chain as desired. Special tooling will be required to apply even pressure to the entire assembly during the thermal compression curing cycle. The tooling can be comprised of a dead weight fixture that covers the entire assembly or it can be a series of mechanical or spring clamps to apply ample pressure to the assembly during the curing process. A neoprene, Teflon or heat-resistant silicone rubber should be used to protect and distribute the weight evenly in between the fixture and the substrate. Apply a minimum of 6 psi of pressure evenly across the entire assembly in a curing oven or hot plate while elevating the temperature of the assembly to 125 C for 120 minutes or 150 C for 30 minutes (refer to Ablefilm 5025E application notes for best results). If spring clamps are used, be aware that over time and temperature exposure, the tension of the springs can change and may need to be recalibrated for accurate pressure on the substrate assembly. Although higher pressures may be applied for optimum bonding strength, one must use caution based on thickness of substrate to eliminate breakage potential. Extreme pressures have been known to displace the polymers in the epoxy and have adverse effects. Individual experimentation will be required for optimum performance and adhesion depending on size and thickness of substrates. 80µ" typical 80µ" typical 80µ" = " = 2 microns Example of male version for sheet epoxies ATP1019 Sample Disclaimer: The results are based on our individual experiments to achieve optimum die shear strength. Results may vary or adjustments may be needed to achieve optimum results for individual applications. Proper cleaning must be done to each surface to achieve maximum bonding strength. Please refer to the application notes of the epoxy manufacturer. 32 w w w. t h i n f i l m. c o m

33 Fractal Fasten (Continued) Paste Epoxies Recommended: For all conductive paste expoxies Apply liberal amounts of 84-1 paste epoxy to a plastic or rubber squeegee of proportionate size to the substrate that will be attached. Squeegee the epoxy onto the back surface of the female Fractal Fasten substrate with even pressure, forcing the epoxy into the fractal cavities until even and full coverage is achieved, making sure all cavities have been filled. Use Isopropanol to clean and remove excess epoxy on the sides of the substrates to mitigate any potential shorting from the bottom to top side. Immediately apply epoxy to the surface of the housing or carrier you wish to attach the substrate to, making sure you have ample coverage for good fill, but not too much, so that you will not have excessive epoxy that may cause shorting from bottom to top sides. Apply moderate pressure with a slight scrub to allow the two epoxies to meld together and sit flush on the attached surface. Inspect carefully for any shorting of epoxy. Repeat these steps as necessary until substrate chain is complete. Cure the epoxy per the manufacturer s recommendations. This and additional information can be found on the application notes from the epoxy manufacturer or on their website. Disclaimer: The results are based on our individual experiments to achieve optimum die shears. Results may vary or adjustments may be needed to achieve optimum results for individual applications. Proper cleaning must be done to each surface to achieve maximum bonding strength. Please refer to the application notes of the epoxy manufacturer. Example of Backside Metallizations 80µ" typical 80µ" typical 80µ" = " = 2 microns Example of female version for paste epoxies The following information is provided by Ablestik and can be found on their application notes or website when purchasing their products. Ablefilm 5025E is used for bonding all types of circuit board materials to metal backplanes and heat sinks. High frequency fluoropolymer and ceramic circuits bonded to copper, brass, Kovar and aluminum are typically application substrates. In most cases, these metals are typically protected with a gold plate finish. The high electrical and thermal conductivity of 5025E ensures a reliable RF ground plane. High manufacturing yields require excellent electrical continuity and mechanical performance. 5025E offers void free electrical continuity and uniform bond line adhesion. 5025E has a work life of three months at room temperature. Useful life can be extended with refrigeration. Once the film adhesive is removed from frozen or cold temperature storage, the product is ready to use when it has reached ambient room temperature. While cleaning of substrates is not mandatory, an organic solvent (i.e. Isopropanol) wipe is recommended to remove any oils that might interfere with the bonding process or electrical interface. Films need applied pressure during cure to promote proper wetting of substrate surfaces. Common industry practices include the use of spring clamps, lamination presses, dead weights and vacuum bagging. The technique to apply pressure will vary by application and customer preference. However, the recommended cure pressure for 5025E is between 5 to 60 psi. For large surface area applications, a rubberized silicone pad is recommended between one of the pressure plates and the bonding part in order to equalize the applied pressure over the entire area. After fixturing, the parts are then cured at an elevated temperature. The specified temperatures and times refer to the bondline values. It should be noted that large mass assemblies will take longer time to achieve bondline temperature. Storage and Handling The storage life of 5025E is 6 months at 5 C. For best results, store in original, tightly covered containers in clean, dry areas. Usable shelf life may vary depending on method of application and storage conditions. 5025E becomes brittle below -5 C. If material goes below this temperature, it should be handled gently and entire package should be warmed to room temperature before opening. This will eliminate the possibility of breaking it in the brittle state or allowing condensation to collect on the product. ATP1018 Sample w w w. t h i n f i l m. c o m 33

34 Standard Dimensions and Tolerances Au: Minimum Line-Width Typical " (10.16µm) Smaller dimensions may be available. Please contact our Sales Department for details. Au: Minimum Gap Typical " (10.16µm) Smaller dimensions may be available. Please contact our Sales Department for details. Cu: Minimum Line-Width Typical (10.16µm) for thicknesses <500µ". For thicknesses >500µ" please contact our Sales Department for details. Cu: Minimum Gap Typical " (10.16µm) for thicknesses <500µ". For thicknesses >500µ" please contact our Sales Department for details. Cu: Maximum Thickness Maximum (25.4µm) Please contact our Sales Department for details. Resistor Minimum Length and Width Typical 0.002" (0.0508mm) non-trimable. Smaller dimensions may be available but will require a higher tolerance. Please contact our Sales Department for details. Au: Dimensional Tolerance on Critical Areas Typical ±0.0002" (5.08µm) Critical: ±0.0001" (2.54µm) Select: ± " (1.27µm) Dimensional tolerance on non-critical areas: Typical ±0.0002" (5.08µm) Cu: Dimensional Tolerance on Critical Areas Where Cu is Thicker Than " (500µ") or (12.7µm) Typical ±0.0003" (7.62µm) Select ±0.0002" (5.08µm) Dimensional tolerance on non-critical areas: Typical ±0.0004" (10.16µm) Circuit Dimensional Tolerance Diamond Sawn Typical ±0.002" (50.8µm) Select: ±0.0005" ±(12.7µm) Resistor Tolerance (With Laser Trim) Typical: ±2% Select: ±0.5% Select is dependent on size of resistor. Via to Pattern Registration Typical: ±0.002" (50.8µm) Select: ±0.005" (12.7µm) Please contact our Sales Department for details. Via Hole Diameter Aspect Ratio: Typical: > 0.85 Select: > 0.50 Aspect ratio is defined as: Dv / Ts where: Dv = Diameter of the via (thru hole) Ts = Thickness of the substrate Via Hole Taper Typical: 10% Select: ±0.001" (25.4µm) Via Hole Diameter Tolerance Typical: ±0.002" (50.8µm) Select: ±0.001" (25.4µm) Via Hole Location Tolerance Typical: ±0.002" (50.8µm) Select: ±0.001" (25.4µm) Via Hole Spacing One diameter minimum distance Via Hole Proximity to Edge of Circuit: One diameter minimum distance away from edge Laser Machined Features Typical: ±0.002" (50.8µm) Select: ±0.001" (25.4µm) Front to Back Image Registration: Typical: ±0.001" (25.4µm) Select: ±0.0005" (12.7µm) Laser Machined Features Next to Au/Sn Min distance: (0.127mm) for Al203 Min distance: (0.254mm) for AlN Min distance: (0.254mm) for BeO Laser Machined Radius Typical: 0.006" (0.152mm) Select: 0.003" (0.0762mm) For more information on dimension and tolerances, please request document #DG50020 Design For Manufacturability. 34 w w w. t h i n f i l m. c o m

35 Standard Dimensions and Tolerances (Continued) Design Guideline Dimensions and Tolerances CIRCUIT EDGE 0.001"(25.4µm) Resistor to Metal Overlap 0.001" (25.4µm) Minimum Metal to Edge Pullback Spacing Preferred Trim Link Area Resistor Squares compensated for Laser Trim is 0.002" (50.8µm) minimum 0.001" (25.4µm) Minimum Resistor Width non-trimmable CIRCUIT EDGE 0.001" (25.4µm) Minimum Resistor To Circuit Edge Spacing Preferred 0.001" (25.4µm) Minimum Notch/Indent per Side of Resistor to Metal Edge Serpentine Area " (0.0381mm) minumum space (gap) preferred Cutting Through Au OK if Authorized by Customer or Design Minimum Notch Via Edge Wrap 0.003" (76.2µm) Letters and Numbers sizing (font sizes) " (89.0µm) min. text height " (10.16µm) minumum space (gap) 0.001" (25.4µm) min. text width " (10.16µm) minimum line width Top View Typical Via Hole Diameter Tolorance and Placement ±0.001" (25.4µm) Side View Via Hole dia. aspect ratio: Typical: > 0.85 Select: > 0.50 CIRCUIT EDGE Dv One Diameter Spacing Minimum Between Via Holes " (63.5µm) Min. Distance From Edge of Conductor Pad to a Via Hole s Edge Ts Dv Aspect ratio is defined as: Dv/Ts where: Dv = Diameter of Via Hole Ts = Thickness of substrate One Diameter Spacing Minimum Between Via Holes and Circuit Edge All prints supplied to ATP need to be at final dimension and not biased. ATP is a fabricator of custom thin film circuits and does not claim to be an electrical design consultant. ATP does not guarantee electrical performance of any customer supplied custom designs. w w w. t h i n f i l m. c o m 35

36 Samples ATP1001: Standard Metallization Bondable Standard TaN/TiW/Au metallization on Aluminum Oxide (Al2O3) is used in applications that require wire bonding, ribbon bonding, epoxy and various other types of attachment, such as Gold Tin, Gold Germanium and Gold Silicon. ATP1002: Nickel Metallizations Solderable TaN/TiW/Ni/Au is one of the Solderable metallizations on Aluminum Oxide (Al2O3) ATP offers. Due to the layer of Ni, this metallization scheme allows better soldering with integrated TaN resistors. ATP1003: Palladium Metallization Solderable TaN/TiW/Pd/Au metallization on Aluminum Oxide (Al2O3) is a wire bondable metallization scheme that is processed in a proprietary manner that reduces the amount of Au Leaching that commonly occurs during denselypopulated high-temperature attachments, such as Gold Germanium and Gold Silicon. This process allows a good fillet attachment around your components without leaching outlining areas. ATP1004: AlN Submount Thermal Solderable TiW/Pd/Au is a Solderable metallization scheme on Aluminum Nitride (AlN). AlN has a thermal conductivity of 170Watts/mK it is ideal for thermal applications with mounting and aligning the most sensitive light emitting diodes. ATP1005: BeO Submount Thermal Solderable TiW/Pd/Au is a Solderable metallization on Beryllium Oxide (BeO). Since BeO has a thermal conductivity of 270 Watts/ mk, it is ideal for the toughest thermal applications. ATP1006: Plated Thru Vias TaN/TiW/Au metallization with CO2 laser-drilled, conductive, plated-thru via holes in Aluminum Oxide (Al2O3) provides a cost effective solution for applications that require interconnects to ground. The conductive plated thru vias replace the tedious process of bonding from the top side of the circuit to ground. ATP1007: Polyimide Supported Bridges TaN/TiW/Au metallization on Aluminum Oxide (Al2O3) with polyimide supported Lange coupler interconnects. This process provides a consistent Lange coupler interconnect, which reduces test and tune time and eliminates wire bonding. Since the interconnects are supported by 3 to 4 microns of polyimide, there is no risk of collapsing or damaging the bridge during shipment or assembly. ATP1008: Plated Gold Bumps TaN/TiW/Au metallization with plated Gold Bumps on Aluminum Oxide (Al2O3). Gold Bumps are used to eliminate wire bonding, which will improve electrical performance at higher frequencies. This is done by eliminating long bond wires and flipping the chip onto the Gold contact bumps. ATP1009: Polyimide Filled Vias TaN/TiW/Au metallization with polyimide filled, conductive, plated-thru-co2-laserdrilled via holes in Aluminum Oxide (Al2O3). Polyimide is used as a nonconductive plug for via hole assemblies. Will prevent epoxy and eutectic solders from reaching the surface of the circuit, while keeping continuity between back side and front side surfaces. ATP1010: Fused Silica/Quartz Circuit TaN/TiW/Au on Fused Silica/Quartz and is used in applications that require a low Dielectric Constant. This material has a 60/40 Optical polish with high dimensional accuracy. 36 w w w. t h i n f i l m. c o m

37 Samples ATP1011: AlN Circuit Thermal TaN/TiW/Au on Aluminum Nitride (AlN) is used in applications that require a high thermal conductivity of 170Watts/mK. It is ideal for mounting and aligning the most sensitive light-emitting diodes. ATP1016: Epoxy No Bleed Metallization TaN/TiW/Au metallization on Aluminum Oxide (Al2O3). ATP offers a proprietary Gold metallization scheme that reduces epoxy bleed out during assembly. This process is wire and ribbon bondable. ATP1012: Au Solid Filled Via ATP1012: Cu Solid Filled Via TaN/TiW/Au with solid gold or copperfilled vias on Aluminum Oxide (Al2O3). The Au and Cu via is completely filled and polished to provide a planarized surface, providing a low inductance ground path on both sides without venting structures, dissimilar metals or exposed oxides. A filled via can also act as a thermal via or two-sided signal interconnect. ATP1017: Au Solid Filled Via ATP1017: Cu Solid Filled Via TaN/TiW/Au with solid gold or copperfilled vias on Aluminum Nitride (AlN). The Au and Cu via is completely filled and polished to provide a planarized surface, providing a low inductance ground path on both sides without venting structures, dissimilar metals or exposed oxides. A filled via can also act as a thermal via or two-sided signal interconnect. ATP1014P: Plated (Au/Sn) ATP1014S: Sputtered (Au/Sn) Pre-deposited and patterned Gold Tin on Aluminum Nitride (AlN). The use of pre-deposited and patterned Au/Sn that is Sputtered(S) or Plated(P) replaces the more traditional approach of using Au/Sn preforms. ATP s standard alloy composition is 80% Au and 20% Sn and reflows at 284 C. ATP1015: Enforced Via TaN/TiW/Au with Conductive plated thru CO2 drilled vias holes with ATP s Enforced hollow plated Via Wrap on Aluminum Oxide (Al2O3). The enhanced via wrap is an additive process to ATP s standard via process. This process will ensure increased via hole stability and conductivity. ATP1018: New Fractal Fasten Female A unique backside metallization developed to enhance the adherence of substrates to carriers using paste epoxies. ATP1019: New Fractal Fasten Male A unique backside metallization developed to enhance the adherence of substrates to carriers using film epoxies. ATP1020: Plated Cu Samples TiW/Au/Cu/Ni/Au metallization on Aluminum Oxide (Al2O3) that is used as a high conductivity film that may require Pb/Sn soldering. Copper and Ni, combined or separately, can be plated as thick as 0.001" or 25.4µm. w w w. t h i n f i l m. c o m 37

38 Serialization Today, many industries require permanent identification marks, such as serialized part numbers. Currently, substrates can be serialized by either Photolithography and etching or by laser scribing. The photolithography process is done using a custom photo mask and creation of the serialized text by either adding or etching metals from fields in patterned areas. The photolithography process will require a photo mask for every unique batch of serialized parts. The line edge quality of the serialization will be the best, but can often be the most expensive, manufacturing method due to the need for masks. Line features and depth of feature are tightly controlled to within " (12.7µm) level. Characters can be as small as " (89.9µm) in height and width features as thin as 0.001" (25.4µm). In most cases where the serialization will be seen by eye unassisted, these features will usually be much larger. The laser scribing process is performed by scribing into select metallized areas or directly into the substrate surface. This process will not require any additional tooling or photo mask, however a CAD file will need to be generated to produce every unique batch of serialized parts. The smallest characters possible Photolithography are a minimum of 0.020" (0.508mm) in height and 0.010" (0.254mm) in width with 0.003" (76.2µm) wide line features. In most cases where these features are significantly larger, laser scribing may be a more cost effective approach to part serialization. Laser scribing into metal Laser scribing Laser scribing into TaN/Ni/TiW metal Laser scribing 38 w w w. t h i n f i l m. c o m

39 Thermal Conductivity METALS (Watts cm C) Silver (Ag) 4.08 Copper (Cu) 3.94 Gold (Au) 2.96 Aluminum (Al) 2.18 Beryllium (Be) 2.00 Tungsten (W) 1.74 Rhodium (Rh) 1.50 Molybdenum (Mo) 1.46 Brass (66%Cu, 34% Zn) Chromium (Cr) Nickel (Ni) Platinum (Pt) Tin (Sn) Tantalum (Ta) Lead (Pb) Titanium (Ti) Manganese (Mn) INSULATORS (Watts cm C) Diamond (CVD) Beryllium Oxide 99.5% (BeO) 2.61 Aluminum Nitride (AIN) 1.70 Boron Nitride (HBN 500 ) 0.59 Sapphire 0.46 Alumina Oxide 99.6% (AI2O3) 0.36 Alumina Oxide 96% (AI2O3) 0.26 Alumina Oxide 91% (AI2O3) 0.13 Glass Mica Air BONDING (Watts cm C) Gold Germanium 88/ Gold Tin 80/ Tin Lead Solder (Sn62) Indium 100% Silver Filled Epoxy Epoxy Temperature Conversion Degrees F = 9/5 (Degrees C) + 32 Degrees C = 5/9 (Degrees F) 32 Gold Conversion EQUIVALENTS 1 Kilogram = Troy Ounces 1 Troy Ounce = Grams 1 Pound = Grams 1 Pound = Troy Ounces 24 Karats = 100% Gold 18 Karats = 75% Gold 14 Karats = 58.33% Gold 10 Karats = 41.66% Gold Solders COMPOSITION MELTING RANGE SOLIDUS LIQUIDUS Sn C 221 C Sn C 193 C Sn C 182 C Sn C 189 C Sn C 190 C Sn C 215 C Sn C 238 C Sn C 246 C Sn C 254 C Sn C 276 C Sn C 299 C Sn5 308 C 312 C Sb5 232 C 240 C Pb C 276 C Pb C 254 C Pb C 246 C Ag C 309 C Ag C 304 C Ag C 365 C Gold Germanium (88/12) 356 C 356 C Gold Tin (80/20) 280 C 280 C Indium (100%) 157 C 157 C Material Properties MATERIAL ELECTRICAL CONDUCTIVITY (Siemens/m) Aluminum Beryllium Brass (66%Cu, 34%Zn) (converted from resistivity) Carbon (graphite) Chrome Copper Gold Indium Lead Nickel Palladium Platinum Rhodium Silver Tin Tin Lead Solder (63/37) (estimated) Titanium Titanium Tungsten (TiW) (estimated) Tungsten Copper Thickness Conversion COPPER OUNCES THICKNESS ½ Ounce 0.7 Mils Microns 1 Ounce 1.4 Mils Microns 2 Ounces 2.8 Mils Microns 3 Ounces 4.2 Mils Microns Other Conversions EQUIVALENTS 1 Micron = Microinches 1 Micron = 10,000 Angstroms 1 Micron = 1,000 Nanometers 25.4 Microns = 1 Mil 1 Angstrom = Microinches 1 Angstrom = Microns 10 Angstroms = Microinches = 1 Nanometer 50 Angstroms = Microinches = 60/40 Optical 254 Angstroms = 1 Microinch 100 Nanometers = Microinches 100 Nanometers = 1,000 Angstroms 1 Nanometer = 10 Angstroms 1 Microinch = 254 Angstroms 1 Microinch = 25.4 Nanometers Microinches = 1 Micron 1 Mil = 25.4 Microns TO GET MULTIPLY BY Angstroms = Microns x 10,000 Angstroms = Microinches x 254 Angstroms = Mils x 25,400 Angstroms = Nanometers x 10 Microns = Nanometers x Microns = Angstroms x Microns = Microinches x Microns = Mils x 25.4 Microns = Millimeters x 0.01 Nanometers = Microns x 1000 Nanometers = Mils x Nanometers = Microinches x 25.4 Nanometers = Angstroms x 0.10 Millimeters = Microns x Millimeters = Mils x Millimeters = Microinches x Millimeters = Inches x 25.4 Centimeters = Inches x 2.54 Centimeters = Millimeters x 10 Microinches = Microns x Microinches = Mils x 1000 Microinches = Angstroms x Microinches = Nanometers x Microinches = Millimeters x Mils = Microns x Mils = Microinches x Mils = Angstroms x 254,000 Mils = Millimeters x Inches = Millimeters x Inches = Centimeters x Sq. Inches = Sq. Centimeters x Sq. Centimeters = Sq. Inches x 6.45 Cu. Inches = Cu. Centimeters x Cu. Centimeters = Cu. Inches x Ounces = Grams x Pounds = Kilograms x Grams = Ounces x Kilograms = Pounds x w w w. t h i n f i l m. c o m 39

40 Applied Thin-Film Products USA l PHONE l FAX l WEB l atp@thinfilm.com l MANUFACTURING 3439 Edison Way, Fremont, CA (Building 1) l ADMINISTRATIVE 3620 Yale Way, Fremont, CA (Building 2) CHINA l PHONE (021) l FAX (021) l Gu-Lang Road, 415 nong No. 4 Bldg 2nd Floor South Shanghai, China