Ultra-Shallow Junction Formation on 3D Silicon and Germanium Device Structures by Ion Energy Decoupled Plasma Doping
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1 Ultra-Shallow Junction Formation on 3D Silicon and Germanium Device Structures by Ion Energy Decoupled Plasma Doping YS Kim & Hyuckjun Kown CTD, Lam Research 2017 Lam Research Corp. EAG
2 Overview Introduction and challenges Challenges on device USJ on 3D structure Plasma-assisted doping (PaD) on Si Previous work for plasma-assisted doping on Si Annealing vs Doping on Si PaD vs ALD vs GaP vs SOD Plasma-assisted doping on Ge Various annealing for junction depth and P level Plasma-assisted doping on Ge Summary 2017 Lam Research Corp. EAG
3 Overview Introduction and challenges Challenges on device USJ on 3D structure for <10 nm node Plasma-assisted doping (PaD) on Si Previous work for plasma-assisted doping on Si Annealing vs Doping on Si Plasma-assisted doping on Ge Various annealing for junction depth and P level Plasma-assisted doping on Ge Summary 2017 Lam Research Corp. EAG
4 Man Made Intelligent but Power Inefficient System AlphaGo handily beat world Go champions 74,000W 12W AlphaGo: employs 1200 CPU s and 280 GPU s in 2016 Human brain: 12W! 15% power reduced in Lam Research Corp. EAG
5 Demands on Surface Engineering Due to Increasing of Both R and C Components on <10 nm Node Device imec 2015 Source: Chipworks To reduce R c : or or : the Schottky barrier height N : the electrically active dopant density at the interface A : contact area 2017 Lam Research Corp. EAG
6 Overview Introduction and challenges Challenges on device USJ on 3D structure for <10 nm node Plasma-assisted doping (PaD) Previous work for plasma-assisted doping on Si Annealing vs Doping on Si Plasma-assisted doping on Ge Various annealing for junction depth and P level Plasma-assisted doping on Ge Summary 2017 Lam Research Corp. EAG
7 Comparison of Conformality for 3D USJ with Various Doping Schemes Doping on 3D structure will be a challenge due to its directionality during implantation To form shallow junction on 3D structure, reducing ion energy and increasing ion scattering will be necessary Monolayer doping by deposition of dopant will be an alternate option V. S. Basker et al, VLSI Tech. Symp., 2010 Beamline I 2 P PLAD (Plasma Doping) PaD (Plasma-assisted Doping) MLD (Mono-Layer Doping) 2017 Lam Research Corp. EAG
8 Comparison of PaD with Typical PLAD (with Bias) Y.Kim et al, IWJT 2016 Before doping After PaD Si Lam result with no-bias (with pre-treatment) Plasma Doping with Bias * Data Source from S Qin, IEEE Trans Electron Dev 62 (2015) Rs from pre-treat but no bias power added is compatible with PLAD 2017 Lam Research Corp. EAG
9 Outline Introduction and challenges Challenges on device USJ on 3D structure for <10 nm node Plasma-assisted doping (PaD) on Si Previous work for plasma-assisted doping on Si Annealing vs Doping on Si Plasma-assisted doping on Ge Various annealing for junction depth and P level Plasma-assisted doping on Ge Summary 2017 Lam Research Corp. EAG
10 Various Annealing on PaD Processed Si Samples Junction depth can be optimized by annealing condition to form USJ Dopants activation confirmed with Rs measurement and SRP 1E+23 Anneal A Anneal B Anneal C 1E+23 1E+23 P CONCENTRATION (atoms/cc) 1E+22 1E+21 1E+20 1E+19 1E+18 1E+17 SIMS SRP 715 /sq P CONCENTRATION (atoms/cc) 1E+22 1E+21 1E+20 1E+19 1E+18 1E+17 SRP SIMS 83 /sq P CONCENTRATION (atoms/cc) 1E+22 1E+21 1E+20 1E+19 1E+18 SIMS SRP 38 /sq 1E DEPTH (nm) 1E DEPTH (nm) 1E DEPTH (nm) 2017 Lam Research Corp. EAG
11 X j with Various Doping Technique vs. Annealing Junction depth can be optimized by optimizing annealing condition to form USJ Dopants activation confirmed by SRP Shallowest X j can be produced by either ALD or MLD (GaD here) Dopant level with ALD is higher than MLD due to encapsulated surface to reduce out-diffusion Highest dopant level can be produced by PaD with LA or FLA 1.0E+22 As doped/dep < 5 nm P Si Surface (atom/cm 3 ) 1.0E E E E E+17 ALD P_RTP ALD P_LA ALD P_FLA PaD_RTP PaD_LA PaD_FLA PaD_as doped GaD_RTP GaD_as doped SOD_10nm_RTP SOD_10nm_FLA SOD_as dep Xj (nm) Laser annealed Flash annealed RTP annealed < 7 nm <12 nm <21 nm 2017 Lam Research Corp. EAG
12 Dopant Level and Junction Depth (X j ) Doping vs. Annealing Technique Average Surface Dopant Level of P Avg Junction Depth with Various Annealing 1.0E+21 Post annealing 20 PaD, ALD, SOD, GaD Surface P Conc (atom/cc) 1.0E E E E+17 Junction Depth (Xj, nm) E+16 ALD PaD GaD SOD 0 As-doped LA FLA RTA Doping Technique Annealing Technique Dopant level at Si surface can be increased by plasma-assisted doping, while GaD/MLD shows the lower level due to its limited dopant source Highest dopant level can be produced by PaD with LA or FLA Dopants activation confirmed by 4pt-pb & SRP Shallowest X j can be produced by laser annealing with the similar surface P level 2017 Lam Research Corp. EAG
13 Outline Introduction and challenges Challenges on device USJ on 3D structure for <10 nm node Plasma-assisted doping (PaD) on Si Previous work for plasma-assisted doping on Si Annealing vs Doping on Si Plasma-assisted doping on Ge Various annealing for junction depth and P level Plasma-assisted doping on Ge Summary 2017 Lam Research Corp. EAG
14 Issue of N Dopants on Ge Fast diffusion of n-dopant is unfavorable to for USJ on Ge Efficient strategies to be developed To constrain the diffusion of n-type dopants To increase the level of electrical activation, i.e., to hinder the formation of dopant defect cluster Flash or Laser Anneal co-doping 2017 Lam Research Corp. EAG
15 Plasma-Assisted Doping for P Doping on Ge With vs. Without Plasma: As Doped Plasma-assisted Doping Plasma doping (no bias power, PH 3 ) produces ~5 nm junction depth, while no plasma (gas only) could not produce any No significant effect of wafer temperature is seen on plasma-assisted doping level at Ge surface Dopants Level vs. Plasma With vs. Without 45C 1.E+23 Surface Dopant Level (atom/cc) 1.E+22 1.E+21 1.E+20 1.E+19 1.E+18 Ds_plasma Ds_no plasma With Plasma No Plasma 1.E Chuck Temp(C) 2017 Lam Research Corp. EAG
16 To Increase P Level on Ge Annealing Variation and Other Enhancement X j vs. RTP Temp P level after annealing by RTP is < 3E19 Flash or P Enhancement will be the option to increase the level Expected P Concentration with Enhancement + Flash Annealing Pre and Post RTP on PaD Ge 1E+23 1E+22 Ge-> 1E+02 9E+01 8E+01 P CONCENTRATION (atoms/cc) 1E+21 1E+20 1E+19 1E+18 1E+17 RTP 60sec No annealing 7E+01 6E+01 5E+01 4E+01 3E+01 2E+01 1E+01 0E DEPTH (nm) Ge INTENSITY (arbitrary units) P Enhanced + FLA P Enhanced +RTP 2017 Lam Research Corp. EAG
17 Enhanced P Level of Plasma-Assisted Doping on Ge After RTP 600C, 30 sec P CONCENTRATION (atoms/cc) 1E+23 1E+22 1E+21 1E+20 1E+19 1E+18 1E+17 P Doping on Ge with Enhancement SiN cap N-> Si-> O-> P <10 nm X j 3 nm slope P level after activation annealing by RTP is ~1E21 P Enhancement with other annealing will be the option to increase the level Steeper profile is expected as FLA or LA will be applied 1E+16 Normalized DEPTH (nm) 2017 Lam Research Corp. EAG
18 Executive Summary Novel process approach has been developed to form USJ on 3D structure of Si and Ge using plasma Doping on 3D Structure Novel approaches increase P dopant level and lowers Rs further, therefore, conformal doping on 3D structure can be enabled without bias power No structure damage has been observed Confirmed that doping with no bias power forms shallow X j depth of <7 nm on 3D structure P Annealing vs. X j Finally various annealing could reduce X j to <5 nm 2017 Lam Research Corp. EAG
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