Microelectronic Device Fabrication I. Physics 445/545. Integration Seminar. Dec. 1 & 3, 2014

Transcription

1 Microelectronic Device Fabrication I (Basic Chemistry and Physics of Semiconductor Device Fabrication) Physics 445/545 Integration Seminar Dec. 1 & 3, 2014

2 Chip Fabrication From bare Si wafers to fully functional IC s requires a complicated series of processing steps. Cleanliness regimen must be rigorous. Jack Kilby inspecting a 300 mm wafer (courtesy TI)

3 Moore s Law The IC was invented independently in 1959 by Jack Kilby at TI and Robert Noyce at Fairchild (later one of the founders of Intel). In 1965, Intel cofounder Gordon Moore saw the future. His prediction, now popularly known as Moore s Law, states that the number of transistors on a chip doubles about every two years. Gordon Moore s original graph from 1965 Today, Intel leads the industry with: A worldwide silicon fab. Advanced technologies, such as trigate for improved performance, in production today Research into new technologies that will enable Intel to continue the 2 year cycle of Moore s Law for the foreseeable future (courtesy: Intel Corp.)

4 Delay (ps) Challenge to Moore s Law Gate Delay Interconnect Delay (Al/SiO2) Interconnect Delay (Cu/Low k) Sum of Delays (Al/SiO2) Sum of Delays (Cu/Low k) Generation (nm)

5 SIA Technology Roadmap

6 SIA Technology Roadmapupdate

7 SIA Technology Roadmap Acceleration More than Moore

8 Speculative Future Technologies Long range roadmap for logic CMOS transistor research

9 Photolithography Photolithography: Simple phototransfer technique quite similar in many respects to ordinary black and white photography. The master image or pattern resides on a mask or reticule that consists of a plate of quartz glass initially coated on one side by a thin layer of metallic chromium. UV light is used to transfer the image into photoresist, which is then developed in a yellow room.

10 Photolithography cont d Exposure Systems: Contact: original concept, mask contacts substrate. Proximity: improvement of contact to increase lifetime of mask and reduce soft defects. Projection: current stateoftheart a fully configured system costs in the neighborhood of M$20. Direct write: At one time was considered a competitor to projection; however, although resolution is high, throughput is too slow. (Direct write is used for fabrication of photomasks.) Photoresist: Negative: remains in exposed area. Developer: xylene or similar solvent Positive: removed in exposed area. Developer: strong alkaline solution

11 Photoresist spincoating Photoresist is generally applied to wafers (or other kinds of substrates) by spincoating. As the term suggests, the idea is quite simple: a solution containing the resist is dispensed on a spinning substrate, which then spreads out to form a uniform layer. Once the film is coated, it is baked to drive off excess solvent and stabilize the properties of the film.

12 Wet Chemical Etching and Cleaning Many wet chemical processes are still used in IC fabrication. These require strong acids, viz., sulfuric, nitric, hydrochloric, etc., as well as weaker acids such as acetic and phosphoric. Also strong bases, viz., potassium hydroxide or more recently tetramethyl ammonium hydroxide. Also weaker bases such as ammonium hydroxide. Fluoride chemistry: hydrofluoric acid and ammonium fluoride Solvents: acetone, isopropyl alcohol, etc. Everyone working fab must be well aware of hazards and correct handling procedures!!

13 Dry Etching Mask Mask Substrate Substrate Isotropic Etching: Requires only the use of simple wet chemical solutions. Increases the width of photlithograpically defined features due to undercut. Rule of thumb: size of undercut equal to depth of etch. (can be much larger). Anisotropic Etching: Includes a directional component, which ideally allows vertical etching without undercut. Cannot be achieved using simple chemical etching, requires more sophisticated apparatus generally requiring reduced pressure (a vacuum chamber) Because anisotropic etching is generally carried out using gaseous chemicals it is dry.

14 Plasma Etching Powered Sheath Powered Electrode Glow Vacuum Chamber Grounded Sheath Grounded Sheath Plasma etching uses gaseous chemicals (viz., halocarbons, halogens, oxygen, etc.) that are activated by a radio frequency glow discharge. The electrical discharge results in the formation of highly reactive free radical and ionic species that attack the substrate.

15 Directionality Directionality is due to a natural electric field that accelerates ions toward and solid surface. This is due to the difference in mobility of electrons and ions and is similar to a depletion region formed at a metalsemiconductor contact!!

16 Physical Vapor Deposition Sputtering, ebeam and thermal evaporation processes are all examples of PVD. In all cases the idea is the same, by some means a supercooled vapor is formed from a source, typically solid, that migrates to condense as a thin film on a substrate.

17 Chemical Vapor Deposition CVD processes may be thermal or plasma enhanced. In both cases, precursor gases react on the substrate surface to form a thin film. It is critical that gas phase nucleation is avoided. This generally requires subatmospheric pressure, but not necessarily.

18 Electrochemical Deposition Substrate Liquid Electrolyte Copper Anode SO 4 = Cu Cu SO = 4 Cu SO 4 = SO 4 = Cu Electrochemical deposition is merely application of oldfashioned electroplating to IC fabrication. The deposition is unpatterned. (A patterned deposition is more correctly called electroforming.) Very pure copper films having very good conformal coverage and feature filling are obtained by ECD. A thin copper seed or strike layer is required to obtain adherent copper thin films by ECD; this layer must be deposited by some other means.

19 Chemical Mechanical Polishing Spindle Wafer Transport Carrier Pad Capture Ring Table Wafer Insert Slurry can be dripped on the pad from above or some systems introduce slurry through the pad. The pad and insert are both compliant. This allows for a more even distribution of down force (or pressure). Either vacuum or air pressure can be applied to the back of the wafer; however, in practice only the capture ring prevents the wafer being lost from the spindle during CMP.

20 Kinematics of CMP r s w s Spindle r r o w Table In principle, relative velocity magnitude between pad and wafer surfaces is uniform if the spindle and table rotate at the same angular velocity. In practice the spin rates are made slightly different to avoid repetitive effects.

21 Damascene Patterning Copper Barrier Layer Dielectric Two levels Dielectric Copper Barrier Layer Damascene Patterning: Useful for materials such as copper, which cannot be successfully removed by conventional etching processes. Requires stringent control of deposition process. Dielectric Copper Barrier Layer

22 CMOS Process Flow: nwell formation n well implant photoresist nwell Masking: In a CMOS flow, both nchannel and pchannel devices must be fabricated. Since the substrate can only be of one doping type, regions of opposite doping type (in this case ntype) must be fabricated in order that devices of both polarities can be fabricated. (typical nwell implant: P 150 kev cm 2 ) n well nwell Drive Diffusion: Of course, after implantation, the dopant must be activated and implant defects removed. In addition some diffusion is also necessary to insure that the ntype region is sufficiently deep for subsequent device fabrication. (typical nwell drive: 1050 C 2 hours)

23 CMOS Process Flow: nwell formation photoresist

24 CMOS Process Flow: active area definition n well silicon nitride Pad Oxidation: In preparation for subsequent nitride deposition, a thin pad oxide is grown in a dry ambient. This is necessary to prevent defect formation during subsequent processing. LPCVD Nitride Deposition: A layer of silicon nitride is now deposited on the wafer surface. This will serve as a polish stop layer during shallow trench isolation. Alternatively, for LOCOS isolation it will serve both as an implant mask and oxidation mask. silicon nitride n well Active Area Masking: This mask defines the actual active area of finished transistors.

25 CMOS Process Flow: active area definition

26 CMOS Process Flow: shallow trench isolation n well Nitride/Oxide/Silicon Etch: Plasma etching (fluorine chemistry) is used to pattern nitride and oxide together. The silicon mesa (typical height: nm) is fabricated using a chlorine/oxygen plasma etch. Once the etches are completed, the photoresist is stripped and a light chemical etch (a diluted, hydrofluoric, nitric, and acetic acid mixture) of the silicon surface is carried out to remove any plasma damage. This is followed by a thin oxidation (thickness: 2030 nm ) so that a high quality interface is obtained. CVD silicon oxide n well CVD (or PECVD) Oxide Deposition: Silicon dioxide is deposited by CVD (or PECVD) over the entire wafer. The deposited thickness should be significantly thicker than the mesa height (~1.52x).

27 CMOS Process Flow: shallow trench isolation CVD silicon oxide n well Oxide Densification: The deposited oxide generally needs to be densified since its deposition temperature is usually low, 400 C. A typical densification process is C for 30 minutes to an hour. Chemical Mechanical Polishing (CMP): The wafer is now polished to remove topography due to the mesa etch. Ideally, it is desirable to remove the oxide layer to just expose the nitride cap on top of the mesa (or alternatively, to have a polish process which is highly selective toward oxide in comparison to nitride). In practice this is difficult to achieve uniformly and is one of the limitations of CMP. n well Nitride/Oxide Strip: The nitride and pad oxide layers are removed to expose clean silicon.

28 CMOS Process Flow: LOCOS isolation n well Nitride/Oxide ( NO ) Etch: Plasma etching is used to etch both layers simultaneously and stop on the silicon substrate. Formerly this etch was done chemically. (The nitride was etched using boiling phosphoric acid and the oxide using hydrofluoric acid.) n well ptype Si nwell Protection (p ) Mask: In order to prevent possible inversion of the silicon surface in the field during device operation, it is necessary to increase the surface doping. (It is likely that the initial oxidation reduced the surface concentration due to boron segregation.) Obviously, the nwell fabricated previously must be protected from this ptype implant. Field (p ) Implant: The p implant goes everywhere except the nwell and device regions. This insures that the surface doping in the field area is sufficiently large to prevent inversion.

29 CMOS Process Flow: LOCOS isolation n well LOCOS Field Oxidation: The nitride now serves as a wet oxidation mask. It is important to control oxidation conditions so that the length of the bird s beak is not too large and that oxidation induced defects are not formed at the edge of the LOCOS mask. Channel Stop Mask and Implant: To insure that devices are electrically isolated, a channel stop mask is defined to separate device regions. This is a high energy implant that completely penetrates the field oxide. Again, photoresist is used as an implant mask and must be removed after the implant. n well Nitride/Oxide (ONO) Strip: The nitride/oxide LOCOS mask is now stripped using hydrofluoric acid, boiling phosphoric acid, and hydrofluoric acid again. It is necessary to use this socalled ONO process since the nitride surface is converted to oxide during LOCOS.

30 CMOS Process Flow: active area isolation

31 CMOS Process Flow: selfaligned source/drain Threshold Adjustment Implantation: Prior to gate oxidation a threshold adjustment implant may be carried out to define the desirable device characteristics. Generally, this implant is a light, shallow boron implant (e.g., BF 2 30 kev cm 2 ). Typically, substrate doping can be chosen which gives good NMOS characteristics, but, this may be difficult for PMOS. The threshold adjustment implant creates shallow compensated layer at the surface of the channel. For judicious choices of nwell and pwell doping, no additional photolithography is needed for threshold adjustment. Of course, after implantation, the wafer is cleaned and then gate oxide is grown. gate oxide n well Gate Oxidation: As discussed earlier in the term, this is perhaps the most critical step of the entire fabrication process. Of course, careful attention must be paid to cleaning prior to gate oxidation. Generally, SC1, SC2, and an HF dip is sufficient. Classically, gate oxidation is a dry process. Stateoftheart gate oxides are now less than 34 nm thick. Furthermore, to improve reliability and reduce boron penetration, gate oxides may be doped with a small amount of nitrogen. (The atomic concentration of nitrogen must be less than 1% at the interface to prevent high surface state density.)

32 CMOS Process Flow: selfaligned source/drain polysilicon n well Polysilicon Deposition: A layer of polysilicon is now deposited over the entire wafer. This polysilicon will be used to fabricate the gate electrode. n well Gate Electrode Mask and Etch: The polysilicon layer is patterned using conventional photolithography. A critical aspect of this process is the etch which must be done using an anisotropic plasma etch with high selectivity toward the gate oxide.

33 CMOS Process Flow: selfaligned source/drain

34 CMOS Process Flow: selfaligned source/drain n well n channel LDD (p ) n and p channel LDD formation: The edges of the polysilicon gate electrode are used to define LDD (lightly doped drain) regions. Of course, PMOS devices must be masked from nchannel implantation and viceversa. (typical LDD implants: BF 2 30 kev 5(10 13 ) cm 2 for PMOS, P 30 kev 5(10 13 ) cm 2 for NMOS, no tilt in either case) n well p channel LDD (n )

35 CMOS Process Flow: selfaligned source/drain

36 CMOS Process Flow: selfaligned source/drain spacer oxide n well Spacer oxide deposition: A conformal layer of silicon dioxide is deposited over the entire wafer. The thickness of this layer will determine the offset between the channel edge and the source drain edge. spacers n well Spacer formation: The bulk of the oxide layer is removed using a highly anisotropic plasma etching process. This leaves selfaligned spacers at the edge of the gate electrode.

37 CMOS Process Flow: selfaligned source/drain n well n channel source/drain (p ) Source/Drain implantation: This is similar to LDD formation except that the spacers offset the implant from the edge of the channel and the implant dose is much higher. (typical source/drain implants: BF 2 30 kev 25(10 15 ) cm 2 for PMOS, As 40 kev 2 5(10 15 ) cm 2 for NMOS) n well p channel source/drain (n )

38 CMOS Process Flow: selfaligned source/drain

39 CMOS Process Flow: selfaligned source/drain PMOS NMOS Implant activation and anneal: At this point, both NMOS and PMOS devices are essentially completed. Activation and annealing merges the source/drain and LDD implants. In addition, a small amount of diffusion under the gate electrode is desirable to obtain a reasonable overlap. This effectively shortens the channel relative to the original asdrawn dimension. Following this step, a salicide (see below) may be formed. The devices are then covered by a protective oxide layer, and contact holes are patterned and opened. PMOS NMOS salicide

40 Advanced CMOS Technology NMOS Transistors: Replacement metal gate Highκ gate dielectric CMP dummy gates (on isolation) PMOS Transistors: Replacement metal gate Highκ gate dielectric SiGe plugs to control channel stress

41 Advanced CMOS Technology

42 Trigate (FinFET) Trigate Transistors: Represent a truly revolutionary departure from conventional MOSFET technology

43 Intel Transistor Innovations

44 Overall Process Considerations Total Thermal Budget This is the sum total effect of all thermal processes including all diffusions, oxidations, depositions, etc. 1. It is commonly quoted in equivalent Dt, where D is diffusivity at a given temperature of some critical dopant and t is the exposure time at that temperature. 2. Because of the random nature of diffusion processes Dt is independent of temperature and, thus, can be accumulated for all thermal processes. Thermal Processing Limit This is the highest allowable temperature at a given stage of overall processing. In general it decreases from the range of C for early or front end steps to C for late or back end steps. Accordingly, high temperature steps such as diffusion and oxidation are generally done as early as possible. In contrast, low temperature steps such as metal and/or insulator deposition and annealing are done late.

45 Process Control Statistical Methods (SPC) Pioneered by Walter A. Shewhart and taken up by W. Edwards Deming after the Second World War. Response Parameters Objectively measurable quantities wellcorrelated with the process. 1. Sheet resistance 2. Thin film thickness 3. Others Control Parameters Adjustable parameters that cause a change in response. 1. Time. 2. Temperature 3. Chemical concentration (e.g., implant dose) 4. Others

46 Control Chart Data must be collected objectively and without bias! UCL UWL Target LWL LCL Time