Processing and Moisture Effects on TDDB for Cu/ULK BEOL Structures
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1 Processing and Moisture Effects on TDDB for Cu/ULK BEOL Structures E.G. Liniger, T.M. Shaw, S.A. Cohen, P.K. Leung*, S.M. Gates, G. Bonilla, D.Canaperi*, S. Papa Rao IBM T.J. Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, NY 10598; *IBM at Albany Nanotech- Center for Semiconductor Research, 255 Fuller Rd, Albany, NY Eric Liniger, Phone: (914)
2 Schematic of Processing Effects Which Impact TDDB Cu corrosion (extended queue time between cmp + capping) CN cap damage layer ( plasma PCs) cap/ild interface possible H20 / Cu / slurry contaminants CMP cmp deformation of Cu H2O / O2 contamination (damaged edge seal) Cu ULK Cu 2
3 Dielectric Structure H 2 O H 3 C silanol O O O H H H H H o O H O H 3 C O O C H O O O O H C H O O 3 O H O H o O Ho C H 2 O O O C H O 2 O H O o H Ho O O 3
4 Processing Defects CMP scratches Contamination Cu Corrosion 4
5 Experimental Procedure: ILDs tested: ILD1 k=2.2 ILD2 k=2.4 ILD3 k=2.7 Test temperature =125 o C 1X spacing ~30-40nm; 2X spacing ~90nm (primarily 2X; to minimize waf. to waf.+ lot to lot variation) Applied field for TDDB: MV/cm Testing of fully passivated HW done in air (in some cases N 2 -forming gas) Annealing + testing of partial-build HW (or HW with intentional ingress path) done in purified N 2 or N 2 -forming gas. 5
6 50nm 50nm 100 um 100um Schematic of 1X Comb/Comb (10cm) Schematic of 2X Serp/Double-Comb(1m) 6 Top spacing determined via x-secn TDDB Structures include comb/comb and serp/double-comb structures 1X spacing ~30-40nm; 2X spacing ~90nm (primarily tested 2X; to minimize waf. to waf.+ lot to lot variation) Spacing determined via x-secn
7 Effect of CMP on TDDB Introduces H 2 O into ILD which could affect film chemistry and bulk electrical properties (1). Potential for contamination of interface with residual Cu, Ta + slurry. Scratching / mechanical deformation. (1) Gates et al, submitted to Journal of Electrochem.Soc. (2010) 7
8 k value at 150oC Effect of CMP Slurry and Post CMP Treatments on k (metal dot on ILD2 k=2.4) (Gates et al) Slurry A Slurry B 150 o C Al Dot damage layer 4000A ILD Control no CMP CMP CMP + Plasma 5s NH3 350oC CMP + UV CMP + 15s 350oC 350oC 30s -Slurry A and B ; Basic -K increases with CMP but is restored through post-cmp treatments - Plasma treatment is the same used to insure strong adhesion of the cap to Cu (next integration step after CMP)
9 Effect of CMP Chemistry on Conductivity and Breakdown (metal dot on ILD2 k=2.4)(gates et al) 1.E o C Al Dot damage layer 1.E A ILD J (Amps/cm2) 1.E-07 1.E-09 Slurry A Slurry B Slurry D 1.E No CMP Field (MV/cm) 9 Slurry A and B; Basic Slurry D; Acidic CMP increases conductivity and reduces breakdown field
10 Effect of Post-cmp treatments to Restore ILD Breakdown Properties (metal dot on ILD2 k=2.4)(gates et al) 1.00E o C Al Dot damage layer 4000A ILD J (Amps/cm.sq.) 1.00E E E-09 CMP CMP and 5 s plasma CMP and 15 s UV CMP and anneal Control no CMP 1.00E Field (MV/cm) 10 Slurry A; Basic Changes in conductivity and breakdown can be reversed with post-cmp treatments
11 CMP Slurry Effects on TDDB for Wider Spacings; ILD1 k= ILD1 k=2.2 serp/comb 90nm spacing 125 o C; 3MV/cm wafer 3; CMP Slurry1(basic) wafer 4; CMP Slurry2(acidic) wafer 5; CMP Slurry3(basic) TDDB Failure Probability (%) CMP has minimal effect on TDDB for structures with wider spacing. Not picking up mech. deformation effects. Post-cmp treatments help restore breakdown properties Failure Time (a.u.) CMP effect expected to be more pronounced with smaller spacing. 11
12 Effect of Queue Time Between CMP and CN Capping Cu Corrosion 12
13 Effect of Queue Time Between CMP and Capping on TDDB 95 ILD1 k=2.2 serp/comb spacing 90nm 125 o C; 3MV/cm wafer 10; Q-time 1 a.u. wafer 11; Q-time 2 a.u. wafer 12; Q-time 3.a.u. wafer 13; Q-time 12 a.u. TDDB Failure Probability (%) Failure Time (a.u.) 13
14 Effect of Moisture on TDDB Effect of moisture on k (bulk properties) Moisture ingress through dicing damage to edge seal Moisture ingress through defects in CN cap (extended q-time) -mulation with intentional damage to edge seal; Breakdown + TDDB -TDDB for actual CN-only capped structures 14
15 Blanket Films with Metal Dots;Effect of H 2 O+Annealing on k (H 2 O from exposure to ambient) 150 o C K o -4% -9% K o -7% -11% Al damage layer 4000A ILD K As Recvd (H 2 O) 350 o C 5min anneal N o C 1h anneal N 2 As Recvd (H 2 O) 350 o C 5min anneal FG 400 o C 1h anneal FG N 2 anneal FG Anneal 15
16 H 2 O Ingress due to Dicing Damage; ILD1 k=2.2 DELAM (Not standard manufacturing dicing) 16
17 H 2 O Ingress due to Dicing Damage; ILD1 k=2.2 ILD1 k=2.2 1m serp/comb 81nm spacing 125 o C; 3MV/cm wafer1 wafer2 95 TDDB Failure Probability (%) Early fails all have subtle dicing damage No dicing damage Failure Time (a.u.) 17
18 IVs on comb/comb;effect of H 2 O + Annealing;ILD1 k=2.2 Intentionally damaged edge seal; Different sample for each IV ILD1 k=2.2 10cm comb/comb 33nm spacing 25 o C 1E-4 1E-5 1E-6 Current (A) 1E-7 1E-8 1E-9 1E-10 (2) H 2 O ingress (3) H 2 O Ingress; 400 o C 1h FG anneal (1) as-received; Intact edge seal; no H 2 O ingress 1E-11 1E-12 (4) H 2 O ingress after 400 o C 1h FG anneal 1E-13 1E-14 anneal=400c 1h FG Voltage (V) G5; chip 1; as recvd; intact edge seal; no H 2 O ingress G5; chip 2+9; 72h 25 o C 50% RH G5; chip 3; 72h 25 o C 50% RH; 400 o C 1h FG G5; chip 4 ;72h 25 o C 50% RH; 400 o C 1h FG; 24h 25 o C 50% RH 18
19 Effect of H 2 O Ingress and Egress on TDDB; ILD1 k=2.2 (Fully Passivated with Intentional Damage to Edge Seal) ILD1 k=2.2 serp/comb spacing=90nm 125 o C; 3.5MV/cm Tested in Forming Gas (FG) TDDB Failure Probability (%) CTL; No ingress/no H2O 24h 85 o C 80% RH; 24h 150 o C FG 24h 85 o C 80% RH / 1h 350 o C FG 24h 85 o C 80% RH / 1h 400 o C FG 24h 25 o C 50% RH / 1h 350 o C FG 24hrs 25 o C 50% RH / 1h 400 o C N 2 24h 25 o C 50% RH / 1h 400 o C FG Failure Time (a.u.) 19
20 Effect of H 2 O Ingress and Egress on TDDB; ILD3 k=2.7 (Fully Passivated with Intentional Damage to Edge Seal) 20 TDDB Failure Probability (%) DOA ILD3 k=2.7; 10cm comb/comb 35nm spacing 125 o C 3.5 MV/cm Tested in Forming Gas(FG) 150 o C 24h FG 400C 1h FG H 2 O(24h 25 o C 50% RH) As Received(No ingress/no H 2 O) Failure Time (a.u.) ~full recovery
21 Effect of H 2 O Egress on TDDB;CN-only Passivation; ILD1 k= ILD1 k=2.2 serp/comb; spacing 86nm 125 o C 3MV/cm Tested in forming gas (FG) Partial Build;CN cap Partial Build;CN cap; annealed 400 o C 1h FG TDDB Failure Probability (%) as received(h 2 O) 400 o C annealed Failure Time (a.u.) 21
22 Conclusions: Bulk ILD properties including k and breakdown could be restored post-cmp by using standard treatments. CMP slurry chemistry had little effect on TDDB in the case of larger spacings (90nm). Queue time between CMP and CN capping had a significant effect on TDDB. Shorter queue times (hours) preferred for TDDB. Moisture significantly degrades TDDB performance for a wide range of ILDs. Any moisture that enters during processing + remains in the structure or moisture which enters after structures are fully built has a disastrous effect on TDDB. Physically adsorbed water can be removed by annealing at ~150 o C while chemically adsorbed water requires annealing at o C for longer times. 22
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