New Materials and Processes for Advanced Chip Manufacturing
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1 New Materials and Processes for Advanced Chip Manufacturing Bob Hollands Director Technical Marketing EXANE BNP Paribas Tech Expert Access Event London June 27, 2013
2 Outline New Materials: Moore s Law Enablers Major Trends in Thin Film Deposition The ALD Technology Platform as a Response FinFET related challenges and Metal ALD PEALD as a Low Temperature Enabler Summary and Conclusions 2
3 Scaling will increasingly be enabled by New Materials and 3D Technologies Scaling enabled by Litho Scaling enabled by Materials IEDM 2002 IEDM 2003 Low-k Strained Si Scaling enabled by 3D Chipworks 2012 IEDM 2007 High-k FinFET 3D SIC 3D Memory 3
4 Increasing Introduction Rate of New Materials BEOL FEOL Starting Mat l Al-Cu SiO, SiN Si (B)PSG Al-Cu SiO, SiN Si,epi Si(O)N TiW WSi, MoSi (B)PSG Al-Cu SiO,N Si,epi TiSi Si(O)N Ti/TiN WSi, PtSi (B)PSG Al-Cu SiO,N Si,epi TaO SOP SiOC Ta/TaN Cu SiOF CoSi Si(O)N Ti/TiN W (B)PSG Al-Cu SiO,N Si,epi SiC LaO ZrO Hf(Si)O AlO Porous SiOC SOI SiGe TaO SOP SiOC Ta/TaN Cu SiOF NiSi Si(O)N Ti/TiN W (B)PSG Al-Cu SiO,N Si,epi
5 Higher Capacitance, Lower Leakage New Materials and Processes: Moore s Law Enablers Higher Mobility, Lower Resistance High-k and Metal Gates DRAM, RF, decoupling capacitors Less Cross Talk, Faster Interconnect Strain and new Channel Materials New metal contacts Smaller Feature Sizes (Porous) Low-k Materials Improved Metals Sub-Rayleigh limit patterning using SDDP 5
6 ALD enables new materials and 3D Front-End Operations New materials and 3D applications require more precise and controlled thin film deposition Compared to conventional deposition techniques ALD offers superior: Conformality Step coverage Interface control The ALD market offers strong growth opportunities: High-k metal gate, FinFET Spacer defined double patterning Other emerging applications ASMI is a leading player in the ALD market Developing ALD technology since 1999 Strong IP position Number 1 in high-k gate and strong position in SDDP 6
7 What is Atomic Layer Deposition (ALD)? Front-End Operations Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Step 3: Reaction to Oxide/Nitride with O 2, H 2 O, NH 3 co-reactant Step 4: Purge and repeat 7
8 Key strengths of ALD relative to conventional deposition Uniformity Step Coverage Min Max TiN 29 nm SiO 2 <1% 3σ <0.7% M-m SEM s Courtesy of Philips Research Labs Interface Control Composition Control Atomically engineered interfaces to optimize leakage current, reliability and work-functions Te V. Pore (2010) Ge 100 Sb Excellent composition control for ternary alloys such as GST and STO 8
9 ASM s unique Materials Development Capabilities ASM Microchemistry (Fi) Pre-cursor Exploration Process Feasibility Basic Materials R&D Cooperative R&D Projects N+ 3 ASM Belgium Process Development Process Integration 15 7 nm Cooperative R&D Projects N+2,3 ASM Europe ASM America ASM Japan ASMGK (Korea) N+1,2 Product Development, Product Engineering, Product Marketing, Cooperative R&D Projects 9
10 Outline New Materials: Moore s Law Enablers Major Trends in Thin Film Deposition The ALD Technology Platform as a Response FinFET related challenges and Metal ALD PEALD as a Low Temperature Enabler Summary and Conclusions 10
11 Major Trends in Thin Film Deposition and ASM s Vision for ALD Thin Film Needs: New materials Thinner films Interface engineering 3D conformality Lower thermal budget Integration Capabilities Subtractive and Damascene patterning Etching Gap fills Clustering ALD is a whole new technology platform for enabling new materials! ALD PEALD.. 11
12 FinFET Challenges: ALD enables Further Scaling in 3D IMEC, 2011 Materials properties and channel length must be uniform over fin height Conformal coverage required ALD technology has become critical for HK and MG layers 12
13 ASM Front-end Products ALD Pulsar XP ALD for high-k Cross-flow reactor Solid source delivery system EmerALD XP ALD for metal gates Showerhead reactor Pulsar XP EmerALD XP 13
14 PEALD as an enabler of Lower Temperature Budget Front-End Operations LT SiO 2 SiO 2 SiN SiCN Deposition Temperature 50 o C 260 o C 360 o C 360 o C Application FEOL SDDP Gate spacer SDDP (LT) Gate spacer Low WER Gate spacer Low temperature deposition of SiO 2 and Si 3 N 4 opens up wide potential application space 14
15 Litho-formed Resist Pattern New Materials enabling Lithography Spacer Defined Double Patterning Depo of SiO 2 at 50C 44nm 22nm Pitch Conformal SiO 2 Anisotropic Etch Pitch/2 Resist Left Center Right ASM, ALD conference 2008; SPIE conference 2009 Uniform CD s: Spacer Thickness NU <1%, 3σ 15
16 ASM Front-end Products PEALD and PECVD Front-End Operations XP8 High productivity single wafer tool for both PEALD and PECVD applications RC3 RC4 RC5 RC6 Accommodates up to 8 chambers for PEALD or PECVD PEALD and PECVD can be integrated on the same platform RC2 RC1 RC8 RC7 16
17 Outline New Materials: Moore s Law Enablers Major Trends in Thin Film Deposition The ALD Technology Platform as a Response FinFET related challenges and Metal ALD PEALD as a Low Temperature Enabler Summary and Conclusions 17
18 Summary Scaling is increasingly enabled by new materials and 3D technologies ALD enables new materials and 3D The ALD market offers strong growth opportunities Adoption of more ALD and PEALD applications in HVM continues ASMI #1 position in ALD for High-k gate 3D FinFET s drive adoption of ALD, not only for the dielectric, but also for metals Strong inroads into patterning applications with PEALD XP8, high productivity system for PEALD applications Drive Innovation, Deliver Excellence 18
19 Drive Innovation, Deliver Excellence
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